ON MJD47T4G High voltage power transistor Datasheet

MJD47, MJD50
High Voltage Power
Transistors
DPAK For Surface Mount Applications
D e s i g n e d f o r l i n e o p e r a t e d a u d i o o u t p u t a m p l i f i e r,
SWITCHMODE t power supply drivers and other switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
(No Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) − VCEO(sus)
1 A Rated Collector Current
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
These are Pb−Free Packages
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NPN SILICON POWER
TRANSISTORS
1 AMPERE
250, 400 VOLTS, 15 WATTS
4
1 2
DPAK
CASE 369C
STYLE 1
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Symbol
MJD47
MJD50
MJD47
MJD50
Emitter−Base Voltage
VCEO
VCB
Max
Unit
Vdc
250
400
5
Vdc
IC
1
2
Adc
Base Current
IB
0.6
mAdc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
− Continuous
− Peak
MARKING DIAGRAM
Vdc
350
500
VEB
Collector Current
3
W
15
0.12
W/°C
AYWW
JxxG
A
Y
WW
Jxx
G
= Assembly Location
= Year
= Work Week
= Device Code
xx = 47 or 50
= Pb−Free Package
W
1.56
0.0125
W/°C
TJ, Tstg
−65 to +150
°C
Symbol
Max
Unit
Thermal Resistance Junction−to−Case
RqJC
8.33
°C/W
Thermal Resistance Junction−to−Ambient
(Note 1)
RqJA
80
°C/W
Lead Temperature for Soldering Purpose
TL
260
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
THERMAL CHARACTERISTICS
Characteristic
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
1
Publication Order Number:
MJD47/D
MJD47, MJD50
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
250
400
−
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
MJD47
MJD50
(IC = 30 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
MJD47
MJD50
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
(VCE = 500 Vdc, VBE = 0)
MJD47
MJD50
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
VCEO(sus)
ICEO
−
mAdc
−
0.2
0.2
−
−
0.1
0.1
−
1
30
10
150
−
−
ICES
IEBO
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VCE(sat)
−
1
Vdc
Base−Emitter On Voltage
(IC = 1 Adc, VCE = 10 Vdc)
VBE(on)
−
1.5
Vdc
Current Gain — Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
fT
10
−
MHz
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
−
−
DYNAMIC CHARACTERISTICS
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
TURN-ON PULSE
APPROX
+11 V
2 20
Vin 0
VEB(off)
1.5 15
1 10
0.5
5
0
0
50
t3
APPROX
+11 V
75
100
125
TURN-OFF PULSE
T, TEMPERATURE (°C)
Figure 1. Power Derating
RB
Cjd << Ceb
-4 V
t1 ≤ 7 ns
10 < t2 < 500 ms
t3 < 15 ns
t2
150
SCOPE
Vin
51
Vin
25
RC
t1
TA (SURFACE MOUNT)
TC
VCC
DUTY CYCLE ≈ 2%
APPROX -9 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
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2
MJD47, MJD50
1.4
200
VCE = 10 V
1.2
TJ = 150°C
60
40
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
100
25°C
20
-55°C
10
1
VBE(sat) @ IC/IB = 5
0.8
VBE(on) @ VCE = 4 V
0.6
TJ = 25°C
0.4
6
4
0.2
2
0.02
0.2
0.4 0.6
0.04 0.06 0.1
IC, COLLECTOR CURRENT (AMPS)
2
1
0
0.02
VCE(sat) @ IC/IB = 5
0.1
0.2
0.4 0.6
0.04 0.06
IC, COLLECTOR CURRENT (AMPS)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 3. DC Current Gain
1
0.7
0.5
1
2
Figure 4. “On” Voltages
D = 0.5
0.3
0.2
0.2
0.1
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.05
0.1
0.07
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
Figure 5. Thermal Response
IC, COLLECTOR CURRENT (AMP)
5
2
1ms
1
0.5
TC ≤ 25°C
500ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100ms
dc
0.2
0.1
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
MJD47
CURVES APPLY BELOW
MJD50
RATED VCEO
0.05
0.02
0.01
0.005
5
10
20
50
100
200 300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 6. Active Region Safe Operating Area
http://onsemi.com
3
MJD47, MJD50
5
1
TJ = 25°C
VCC = 200 V
IC/IB = 5
0.2
tr
0.1
td
ts
2
1
t, TIME (s)
μ
t, TIME (s)
μ
0.5
0.05
tf
0.2
0.1
0.02
0.01
0.02
TJ = 25°C
VCC = 200 V
IC/IB = 5
0.5
0.05
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
1
0.05
0.02
2
Figure 7. Turn−On Time
0.05
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 8. Turn-Off Time
ORDERING INFORMATION
Package
Shipping†
MJD47G
369C
(Pb−Free)
75 Units / Rail
MJD47T4G
369C
(Pb−Free)
2500 / Tape & Reel
MJD50G
369C
(Pb−Free)
75 Units / Rail
MJD50T4G
369C
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MJD47, MJD50
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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5
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For additional information, please contact your local
Sales Representative
MJD47/D
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