ISOCOM ISP321-2X High density mounting phototransistor optically coupled isolator Datasheet

ISP321-1X, ISP321-2X, ISP321-4X
ISP321-1, ISP321-2, ISP321-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
Package code " EE "
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : - STD
- G form
- SMD approved to CECC 00802
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ISP321-1X
ISP321-1
Dimensions in mm
2.54
1
2
7.0
6.0
4
3
1.2
5.08
4.08
Certified to EN60950 by :Nemko - Certificate No. P01102465
7.62
4.0
3.0
13°
Max
0.5
DESCRIPTION
3.0
The ISP321-1 , ISP321-2 , ISP321-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio ( 50% min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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High BVCEO ( 80Vmin )
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
ISP321-2X
ISP321-2
0.5
0.26
3.35
2.54
7.0
6.0
1
8
2
3
7
1.2
10.16
9.16
7.62
4.0
3.0
13°
Max
0.5
3.0
0.26
3.35
0.5
1
ISP321-4X
ISP321-4
3
4
2.54
OPTION G
SURFACE MOUNT
7.62
1.2
20.32
19.32
0.6
0.1
10.46
9.86
1.25
0.75
13
5
12
6
11
7
8
10
9
7.62
4.0
3.0
13°
Max
0.5
0.26
10.16
16
15
14
2
7.0
6.0
OPTION SM
6
5
4
3.0
0.5 3.35
0.26
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1UD England
Tel: (01429)863609 Fax : (01429) 863581 e-mail
[email protected] http://www.isocom.com
17/7/08
DB91075
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
80V
6V
50mA
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (VF)
MIN TYP MAX UNITS
1.0
1.15
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
80
( Note 2 )
Emitter-collector Breakdown (BVECO)
6
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
ISP321-1, ISP321-2, ISP321-4
CTR selection available
GB
BL
GB
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO
Note 1
Note 2
17/7/08
V
IF = 10mA
10
μA
VR = 4V
V
IC = 0.5mA
V
nA
IE = 100μA
VCE = 20V
%
%
%
%
V
V
VRMS
VPK
5mA IF , 5V VCE
Ω
VIO = 500V (note 1)
μs
μs
VCE = 2V ,
IC = 2mA, RL = 100Ω
600
600
600
0.4
0.4
5300
7500
Input-output Isolation Resistance RISO 5x1010
Response Time (Rise, tr)
Response Time (Fall, tf)
1.3
100
50
100
200
30
4
3
TEST CONDITION
1mA IF , 0.4V VCE
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
See note 1
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB91075
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
TA = 25°C
25
Collector current IC (mA)
Collector power dissipation PC (mW)
200
150
100
50
0
15
50
40
30
20
10
10
5
20
5
IF = 2mA
0
-30
0
25
50
75
100
0
125
Ambient temperature TA ( °C )
0.2
50
50
1.0
TA = 25°C
30
Collector current IC (mA)
50
Forward current IF (mA)
0.8
Collector Current vs. Collector-emitter Voltage
60
40
30
20
10
0
20
40
15
30
10
20
10
IF = 5mA
0
-30
0
25
50
75
100
125
0
Ambient temperature TA ( °C )
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
Current transfer ratio CTR (%)
Collector-emitter saturation voltage VCE(SAT) (V)
0.6
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
IF = 5mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
280
240
200
160
120
80
VCE = 5V
TA = 25°C
40
0
0
-30
0
25
50
75
Ambient temperature TA ( °C )
17/7/08
0.4
100
1
2
5
10
20
Forward current IF (mA)
DB91075
50
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