MJL21195, MJL21196 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features • • • • • • • http://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain − hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.50 A, 80 V, 1 Second Epoxy Meets UL 94, V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V These are Pb−Free Devices* 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc Collector Current − Continuous Collector Current − Peak (Note 1) IC 16 30 Adc Base Current − Continuous IB 5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 W W/°C TJ, Tstg − 65 to +150 °C Symbol Max Unit RqJC 0.7 °C/W Operating and Storage Junction Temperature Range MJL2119x AYYWWG TO−264 CASE 340G STYLE 2 x A YY WW G 3 1 EMITTER BASE 2 COLLECTOR = 5 or 6 = Assembly Location = Year = Work Week = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. ORDERING INFORMATION Package Shipping† MJL21195G TO−264 (Pb−Free) 25 Units / Rail MJL21196G TO−264 (Pb−Free) 25 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 June, 2010 − Rev. 4 1 Publication Order Number: MJL21195/D MJL21195, MJL21196 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit VCEO(sus) 250 − − Vdc ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 100 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − − 100 mAdc 4.0 2.25 − − − − 25 8.0 − − 100 − − − 2.2 − − − − 1.4 4 OFF CHARACTERISTICS (Note 2) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = 200 Vdc, IB = 0) OFF CHARACTERISTICS (Note 3) SECOND BREAKDOWN (Note 3) IS/b Second Breakdown Collector Current with Base Forward Biased (VCE = 50 Vdc, t = 1 s (Nonrepetitive) (VCE = 80 Vdc, t = 1 s (Nonrepetitive) Adc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, IB = 5 Adc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS (Note 3) Total Harmonic Distortion at the Output VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS (Matched pair hFE = 50 @ 5 A/5 V) THD hFE unmatched hFE matched Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) % − 0.8 − − 0.08 − fT 4 − − MHz Cob − − 500 pF PNP MJL21195 6.5 F T, CURRENT BANDWIDTH PRODUCT (MHz) F T, CURRENT BANDWIDTH PRODUCT (MHz) 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%. 6.0 VCE = 10 V 5.5 5.0 VCE = 5 V 4.5 4.0 3.5 TJ = 25°C ftest = 1 MHz 3.0 2.5 2.0 0.1 1.0 10 NPN MJL21196 7.5 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 VCE = 10 V VCE = 5 V TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product http://onsemi.com 2 10 MJL21195, MJL21196 TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 20 V VCE = 20 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.1 Figure 3. DC Current Gain, VCE = 20 V Figure 4. DC Current Gain, VCE = 20 V PNP MJL21195 NPN MJL21196 100 1000 h FE , DC CURRENT GAIN h FE , DC CURRENT GAIN 1000 TJ = 100°C 100 25°C -25°C TJ = 100°C 100 25°C -25°C VCE = 5 V VCE = 5 V 10 10 0.1 1.0 10 IC, COLLECTOR CURRENT (A) 100 0.1 Figure 5. DC Current Gain, VCE = 5 V PNP MJL21195 100 NPN MJL21196 30 IC , COLLECTOR CURRENT (A) 2.0 A 25 1.0 10 IC, COLLECTOR CURRENT (A) Figure 6. DC Current Gain, VCE = 5 V 30 IC , COLLECTOR CURRENT (A) 1.0 10 IC, COLLECTOR CURRENT (A) 1.5 A 20 1.0 A 15 IB = 0.5 A 10 5.0 2.0 A 1.5 A 25 1.0 A 20 IB = 0.5 A 15 10 5.0 TJ = 25°C TJ = 25°C 0 0 0 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) 25 0 Figure 7. Typical Output Characteristics 5.0 10 15 20 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 8. Typical Output Characteristics http://onsemi.com 3 25 MJL21195, MJL21196 TYPICAL CHARACTERISTICS PNP MJL21195 NPN MJL21196 3.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 1.4 TJ = 25°C IC/IB = 10 2.5 2.0 1.5 VBE(sat) 1.0 0.5 TJ = 25°C IC/IB = 10 1.2 1.0 VBE(sat) 0.8 0.6 0.4 VCE(sat) 0.2 VCE(sat) 0 0 1.0 10 IC, COLLECTOR CURRENT (A) 100 1.0 10 IC, COLLECTOR CURRENT (A) Figure 9. Typical Saturation Voltages Figure 10. Typical Saturation Voltages PNP MJL21195 NPN MJL21196 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 0.1 VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) VBE(on) , BASE-EMITTER VOLTAGE (VOLTS) 0.1 1.0 10 100 100 10 TJ = 25°C 1.0 VCE = 20 V VCE = 5 V 0.1 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Typical Base−Emitter Voltage Figure 12. Typical Base−Emitter Voltage 100 IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 1 Sec 50 ms 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Active Region Safe Operating Area http://onsemi.com 4 MJL21195, MJL21196 10000 10000 C, CAPACITANCE (pF) Cib 1000 Cob 1000 TJ = 25°C ftest = 1 MHz TJ = 25°C ftest = 1 MHz 100 Cob 100 0.1 1.0 10 100 0.1 1.0 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 14. MJL21195 Typical Capacitance Figure 15. MJL21196 Typical Capacitance 1.2 1.1 T , TOTAL HARMONIC HD DISTORTION (%) C, CAPACITANCE (pF) Cib 1.0 0.9 0.8 0.7 0.6 10 100 1000 10000 100000 FREQUENCY (Hz) Figure 16. Typical Total Harmonic Distortion +50 V AUDIO PRECISION MODEL ONE PLUS TOTAL HARMONIC DISTORTION ANALYZER SOURCE AMPLIFIER 50 W DUT 0.5 W 0.5 W DUT -50 V Figure 17. Total Harmonic Distortion Test Circuit http://onsemi.com 5 8.0 W 100 MJL21195, MJL21196 PACKAGE DIMENSIONS TO−3BPL (TO−264) CASE 340G−02 ISSUE J Q 0.25 (0.010) −B− M T B −T− M C E U N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. A R 1 2 L 3 P F 2 PL K W G J H D 3 PL 0.25 (0.010) M T B S DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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