Power Module 600V IGBT Family MG06400D-BN1MM Series 400A Dual IGBT RoHS Features • P ositive temperature coefficient • Ultra low loss • High ruggedness • H igh short circuit capability Applications Agency Approvals AGENCY • Motor drives • SMPS and UPS • Inverter • Welder • Converter • Induction Heating AGENCY FILE NUMBER E71639 Module Characteristics (TC = 25°C, unless otherwise specified) Symbol TVj max) Parameters Test Conditions Min Typ Max. Junction Temperature TVj op Operating Temperature -40 TSTG Storage Temperature Range -40 Visol Insulation Test Voltage AC, t=1min CTI Comparative Tracking Index Module case exposed to 0.1% ammonium chloride solution per UL and IEC standards RthJC Junction-to-Case Thermal Resistance Per IGBT RthJCD Junction-to-Case Thermal Resistance Per Inverse Diode Max Unit 150 °C 150 °C 125 °C 3000 V 350 V 0.09 K/W 0.15 K/W Torque Module-to-Sink Recommended (M6) 3 5 N·m Torque Module Electrodes Recommended (M6) 2.5 5 N·m Weight 310 g Values Unit V Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES Collector - Emitter Voltage 600 VGES Gate - Emitter Voltage ±20 V TC=25°C 460 A TC=50°C 400 A TC=25°C, tp=1ms 920 A TC=50°C, tp=1ms 800 A 1400 W 600 V TC=25°C 400 A TC=50°C 320 A 570 A IC DC Collector Current ICpuls Pulsed Collector Current Ptot Power Dissipation Per IGBT Free-Wheeling Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IF(RMs) RMS Forward Current IFSM Non-Repetitive Surge Forward Current TVj =45°C, t=10ms, Sine 1200 A TVj =45°C, t=8.3ms, Sine 1320 A Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06400D-BN1MM 1 Revised: July 26, 2013 04:44 PM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Power Module 600V IGBT Family Electrical Characteristics (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions Min Typ Max Unit Gate - Emitter Threshold Voltage VCE=VGE, IC=8mA 4.5 Collector - Emitter Saturation Voltage Ic=400A, VGE=15V, TVj=25°C 5.5 6.5 V 1.95 2.45 V IC=400A, VGE=15V, TVj=125°C 2.2 1 mA IGBT VGE(th) VCE(sat) ICES Collector Leakage Current IGES Gate Leakage Current RGint Intergrated Gate Resistor Qge Gate Charge Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr td(off) Rise Time Turn - off Delay Time VCE=600V, VGE=0V, TVj=25°C VCE=600V, VGE=0V, TVj=125°C VCE=0V, VGE=±20V RG =3Ω tf Eon Eoff Fall Time Turn - on Energy VGE=±15V Inductive Load Turn - off Energy mA 1.2 μA Ω 1.8 μC 18 nF 1.8 nF 1.6 nF TVj =25°C 195 ns TVj =125°C 220 ns TVj =25°C 65 ns TVj=125°C 80 ns VCE=25V, VGE=0V, f =1MHz IC=400A 2 1.2 2.5 VCE=300V, IC=400A , VGE=±15V VCC=300V V TVj =25°C 295 ns TVj =125°C 350 ns TVj =25°C 45 ns TVj=125°C 60 ns TVj =25°C 6.5 mJ TVj =125°C 10 mJ TVj =25°C 9.5 mJ TVj=125°C 14.5 mJ Free-Wheeling Diode IF=400A , VGE=0V,TVj =125°C 1.25 IF=400A , VGE=0V, TVj =125°C 1.2 V Reverse Recovery Time IF=400A , VR=300V 249 ns IRRM Reverse Recovery Charge diF/dt=-2000A/μs 214 A Qrr Reverse Recovery Charge TJ =125°C 31 μC VF Forward Voltage Trr MG06400D-BN1MM 2 Revised: July 26, 2013 04:44 PM 1.6 V ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Power Module 600V IGBT Family Figure 1: Typical Output Characteristics Figure 2: T ypical Transfer Characteristics 820 820 700 700 560 560 T Vj =25°C IC (A) IC (A) V CE =20V 420 420 T Vj =125°C 280 280 140 140 T Vj =125°C 0 0 0.5 1 1.5 2.5 2 VCE(sat)˄V˅ 0 3.5 3 Figure 3: Switching Energy vs. Collector Current 2 4 6 8 VGE˄V˅ 10 12 14 Figure 4: Switching Energy vs. Gate Resistor 36 36 V CC =300V R G =3ohm V GE =±15V T Vj =125°C 24 V CC =300V IC =400A V GE =±15V T Vj =125°C 30 24 Eon Eoff (mJ) 30 Eon Eoff (mJ) 0 T Vj =25°C 18 E off 12 E on 18 E off 12 E on 6 6 0 0 120 240 360 480 IC˄A˅ 600 720 0 840 Figure 5: Switching Times vs. Collector Current 0 3 6 9 12 15 RG˄ohm˅ 18 21 Figure 6: Switching Times vs. Gate Resistor 1000 1000 td(off) td(off) td(on) 100 t (ns) t (ns) td(on) tr 100 tr tf tf 10 0 MG06400D-BN1MM V CC =300V R G =3ohm V GE =±15V T Vj =125°C 80 160 240 320 IC˄A˅ 400 480 10 560 3 Revised: July 26, 2013 04:44 PM V CC =300V IC =400A V GE =±15V T Vj =125°C 0 2 4 6 8 10 RG˄ohm˅ 12 14 ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Power Module 600V IGBT Family Figure 7: Diode Forward Characteristics Figure 8: Typical Capacitances vs. VCE 25 100 V CC =300V IC =400A T Vj =25°C 20 V GE =0V f=1MHz C ies 10 C (nF) VGE (V) 15 10 C oes 1 C res 5 0 0 800 1200 Qg˄nC˅ 400 1600 0.1 2000 0 5 25 30 35 1000 2000 800 1600 ICsc (A) 2400 ICpuls (A) 20 Figure 10: Short Circuit Safe Operating Area 1200 600 1200 400 0 0 15 VCE˄V˅ Figure 9: Reverse Biased Safe Operating Area 200 10 800 T Vj =150°C T C =25°C V GE =15V 100 200 T Vj =150°C T C =25°C V GE =15V tsc İ10µs 400 300 400 500 600 VCE˄V˅ 0 700 Figure 11: Rated Current vs. TC 0 100 200 300 400 VCE˄V˅ 500 600 700 Figure12: Diode Forward Characteristics 600 820 T Vj =150°C V GE ı15V 500 700 400 560 IC(A) T Vj =125°C IF (A) 300 420 200 280 100 140 0 0 MG06400D-BN1MM T Vj =25°C 25 50 75 100 125 150 TC Case Temperature(°C) 0 175 4 Revised: July 26, 2013 04:44 PM 0 0.5 1.0 1.5 2.0 2.5 V ˄V˅ 3 3.5 ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Power Module 600V IGBT Family Figure 13: Transient Thermal Impedance of IGBT Figure 14:Transient Thermal Impedance of Diode 1 1 10-1 -1 10-2 10-3 ZthJC (K/W) ZthJC (K/W) 10 Duty 0.5 0.2 0.1 0.05 Single Pulse -3 10 -4 10 -4 10 10-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Dimensions-Package D MG06400D-BN1MM Duty 0.5 0.2 0.1 0.05 Single Pulse -2 10 10-4 10-3 10-2 10-1 1 Rectangular Pulse Duration (seconds) Circuit Diagram and Pin Assignment 5 Revised: July 26, 2013 04:44 PM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. Power Module 600V IGBT Family Packing Options Part Number Marking Weight Packing Mode M.O.Q MG06400D-BN1MM MG06400D-BN1MM 310g Bulk Pack 30 Part Marking System Part Numbering System MG06400D-BN1MM PRODUCT TYPE M: Power Module ASSEMBLY SITE MODULE TYPE G: IGBT VOLTAGE RATING 06: 600V WAFER TYPE CURRENT RATING PACKAGE TYPE 400: 400A MG06400D-BN1MM CIRCUIT TYPE B: 2x(IGBT+FWD) D: Package D 6 Revised: July 26, 2013 04:44 PM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information.