NTE NTE56068 Triac, 16a, high commutation Datasheet

NTE56068 & NTE56069
TRIAC, 16A, High Commutation
Description:
The NTE56068 and NTE56069 are glass passivated, high commutation TRIACs in an isolated full–
pack type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt
can occur. These devices will commutate the full rated RMS current at the maximum rated junction
temperature, without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56068 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56069 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
2
18
50
mA
MT2 (+), G (–)
2
21
50
mA
MT2 (–), G (–)
2
34
50
mA
–
31
60
mA
MT2 (+), G (–)
–
34
90
mA
MT2 (–), G (–)
–
30
60
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
IL
VD = 12V, IT = 0.1A, Note 2
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
31
60
mA
On–State Voltage
VT
IT = 20A
–
1.2
1.5
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
–
0.1
0.5
mA
1000
4000
–
V/µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
VD = VDRMmax, TJ = +125°C
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Critical Rate–of–Change of
Commutating Current
dIcom/dt
VDM = 400V, TJ = +125°C, ITRMS = 16A,
without Snubber, Gate Open
–
28
–
A/ms
tgt
ITM = 20A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
RMS Isolation Voltage from All
3 Pins to External Heatsink
VISOL
f = 50 – 60Hz, Sinusoidal Waveform,
R.H. ≤ 65%, Clean and Dustfree
–
–
2500
V
Capacitance from T2 to
External Heatsink
CISOL
f = 1MHz
–
10
–
pF
Gate Controlled Turn–On Time
Isolation Characteristics
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.181 (4.6) Max
.126 (3.2) Dia Max
.405 (10.3)
Max
.114 (2.9)
Isol
.252
(6.4)
.622
(15.0)
Max
MT2
.118
(3.0)
Max
.531
(13.5)
Min
MT1
.098 (2.5)
G
.100 (2.54)
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