NTE56068 & NTE56069 TRIAC, 16A, High Commutation Description: The NTE56068 and NTE56069 are glass passivated, high commutation TRIACs in an isolated full– pack type package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. Absolute Maximum Ratings: Repetitive Peak Off–Sate Voltage (Note 1), VDRM NTE56068 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V NTE56069 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V RMS On–State Current (Full Sine Wave, THS ≤ 38°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Non–Repetitive Peak On–State Current, ITSM (Full Sine Wave, TJ = +25°C prior to Surge) t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140A t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98A2sec Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt (ITM = 20A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Thermal Resistance, Junction–to–Heatsink (Full or Half Cycle), RthJHS With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0K/W Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5K/W Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55K/W Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage, but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed 15A/µs. Electrical Characteristics: (TJ = +25°C unless otherwise specfied) Parameter Symbol Test Conditions Min Typ Max Unit 2 18 50 mA MT2 (+), G (–) 2 21 50 mA MT2 (–), G (–) 2 34 50 mA – 31 60 mA MT2 (+), G (–) – 34 90 mA MT2 (–), G (–) – 30 60 mA Static Characteristics Gate Trigger Current MT2 (+), G (+) IGT Latching Current MT2 (+), G (+) IL VD = 12V, IT = 0.1A, Note 2 VD = 12V, IT = 0.1A Holding Current IH VD = 12V, IT = 0.1A – 31 60 mA On–State Voltage VT IT = 20A – 1.2 1.5 V VD = 12V, IT = 0.1A – 0.7 1.5 V 0.25 0.4 – V – 0.1 0.5 mA 1000 4000 – V/µs Gate Trigger Voltage VGT VD = 400V, IT = 0.1A, TJ = +125°C Off–State Leakage Current ID VD = VDRMmax, TJ = +125°C Dynamic Characteristics Critical Rate–of–Rise of Off–State Voltage dVD/dt VDM = 67% VDRMmax, TJ = +125°C, Exponential Waveform, Gate Open Critical Rate–of–Change of Commutating Current dIcom/dt VDM = 400V, TJ = +125°C, ITRMS = 16A, without Snubber, Gate Open – 28 – A/ms tgt ITM = 20A, VD = VDRMmax, IG = 0.1A, dIG/dt = 5A/µs – 2 – µs RMS Isolation Voltage from All 3 Pins to External Heatsink VISOL f = 50 – 60Hz, Sinusoidal Waveform, R.H. ≤ 65%, Clean and Dustfree – – 2500 V Capacitance from T2 to External Heatsink CISOL f = 1MHz – 10 – pF Gate Controlled Turn–On Time Isolation Characteristics Note 2. Device does not trigger in the MT2 (–), G (+) quadrant. .181 (4.6) Max .126 (3.2) Dia Max .405 (10.3) Max .114 (2.9) Isol .252 (6.4) .622 (15.0) Max MT2 .118 (3.0) Max .531 (13.5) Min MT1 .098 (2.5) G .100 (2.54)