CJF715 SOT-89-3L Plastic-Encapsulate Transistors CJF715 TRANSISTOR (NPN) DESCRIPTION The CJF715 are NPN transistorsmanufactured using Planar SOT-89-3L Technology resultingin rugged high performance devices. FEATURES z VOLTAGE REGULATION z RELAY DRIVER z GENERIC SWITCH 1. BASE 2. COLLECTOR Marking: 715 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 140 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Continuous Collector Current 1.5 A PC Collector Dissipation 0.5 W Thermal Resistance from Junction to Ambient 250 ℃/ W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA [email protected] www.zpsemi.com 1 of 2 CJF715 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,IE=0 140 V Collector-emitter breakdown voltage V(BR)CEO* IC=10mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V Collector cut-off current(VBE=0V) ICES VCB=140V,IE=0 500 uA Collector cut-off current ICEO VCB=80V,IE=0 1 mA Emitter cut-off current IEBO VEB=5V,IC=0 100 uA IC=100mA,IB=10mA 0.25 V IC=1A,IB=100mA 0.5 V 1 V 1.1 V DC current gain Collector-emitter saturation voltage hFE* VCE=2V,IC=0.1A 140 VCE=2V,IC=0.5A 80 VCE=2V,IC=1A 40 VCE(sat) * IC=100mA,IB=10mA Base-emitter saturation voltage VBE(sat) * IC=1A,IB=100mA Transition frequency fT VCE=10V,IC=100mA 50 MHz * Pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. [email protected] www.zpsemi.com 2 of 2