SEMICONDUCTOR GM200HB06BL TECHNICAL DATA 600V/200A 2-PACK IGBT MODULE (Half - Bridge) FEATURES ·Trench IGBT Technology ·Low VCE(sat) ·Low Turn-off loss ·Short tail current APPLICATION ·Motor Controls ·General purpose inverters ·Servo Controls OUTLINE DRAWING _ 0.3 13 + Unit : mm _ 0.3 13 + _ 0.3 13 + _ 0.3 23 + 6 7 3 _ 0.5 35 + _ 0.5 31 + _ 0.5 30 + 4. G1 5. E1 6. G2 7. E2 _ 0.5 6+ _ 0.3 17 + 5 4 1. C2 /E1 2. E2 3. C1 _ 0.3 23 + _ 0.5 80 + _ 0.5 93 + _ 0.5 30 + 2 5 4 _ 0.5 22 + 1 3 _ 0.5 28 + 2 _ 0.3 25 + 6 7 1 _ 0.3 17 + _ 0.3 14 + INTERNAL CIRCUIT MAXIMUM RATING (@Tc=25℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Collector-to-Emitter Voltage VCES 600 V Gate-Emitter Voltage VGES ±20 V Continuous Collector Current @TC=25℃ 265 IC @TC=80℃ ICP Pulsed Collector Current * Diode Continuous Forward Current @TC=25℃ A 200 400 A 265 IF @TC=80℃ A 200 Viso 2500 V Junction Temperature Tj -40 ~ +150 ℃ Storage Temperature Tstg -40 ~ +125 ℃ Weight 190±5 g Mounting Torque (M6) M 5 N.m Terminal Connection torque (M5) M 4 N.m Isolation Voltage test AC @ 1 minute Weight * Half sine wave at 60Hz, peak value. 2013. 9. 02 Revision No : 0 1/2 GM200HB06BL ELECTRICAL CHARACTERISTICS (IGBT, @Tc=25℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVCES IC = 1mA, VGE=0V 600 - - V Collector Cut-off Current ICES VCE=650V, VGE=0V - - 1 mA Gate Leakage Current IGES VGE=±20V -600 - 600 nA Collector-Emitter Breakdown Voltage Gate Threshold Voltage VGE(th) VCE=VGE, IC=6.6mA 5.5 - 7.7 V Collector-Emitter Saturation Voltage VCE(sat) VGE= 15V, IC=200A - 1.6 2.1 V - - 2.0 - Ω - 130 - RG Internal Gate Resistance Dynamic td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tf Fall Time - 320 - VCC= 300V, IC=200A, RG=3.3Ω, VGE=±15V, - 120 - inductive load - 50 - ns Turn-On Switching Loss EON - 8.5 - Turn-Off Switching Loss Eoff - 0.7 - Gate Charge Qge - 380 - Input Capacitance Cies - 12.94 - Output Capacitance Coes - 0.65 - Reverse Transfer Capacitance Cres - 0.34 - Short circuit current ISC - 1100 - A MIN. TYP. MAX. UNIT - 1.9 2..3 V - 2.2 - uQ - 240 - A mJ IC = 200A, VCC=400V, VGE=15V VCE= 30V, VGE=0V, f=1㎒ VCC= 300V, VGE=15V tpsc ≤ 10 ㎲ nC nF ELECTRICAL CHARACTERISTICS (DIODE, @Tc=25℃ Per Leg, Unless otherwise noted) CHARACTERISTIC SYMBOL Diode Forward Voltage VF Diode Reverse Recovery Charge Qrr Diode Peak Reverse Recovery Current Irr TEST CONDITION IF = 200A, VGE=0V IF=200A, VR=300V, di /dt =-900A/㎲ THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL MIN TYP MAX. Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) - 0.3 - Junction to Case (Diode Part, Per 1/2 Module) Rth(j-c) - 0.9 - 2013. 9. 02 Revision No : 0 UNIT ℃/W 2/2