PD- 96095 IRF9Z30PbF HEXFET® POWER MOSFET Features Product Summary P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent Temperature Stability Lead-Free Part Number IRF9Z30PbF VDS(V) RDSON (Ω) ID (A) -50 0.14 -18 D G TO-220AB S Description The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness. The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse amplifiers. Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage -50 VDGR Drain-to-Gate Voltage (RGS =20KΩ) -50 VGS Gate-to-Source Voltage ±20 ID @ TC = 25°C Continuous Drain Current, VGS -18 ID @ TC = 100°C Continuous Drain Current, VGS -11 IDM Pulsed Drain Current -60 PD @TC = 25°C Max. Power Dissipation 74 W Linear Derating Factor Inductive Current, Clamped (L= 100µH) See Fig. 14 0.59 W/°C ILM IL Unclamped Inductive Current(Avalanche Current) TJ Operating Junction and TSTG Storage Temperature Range -60 See Fig. 15 -3.1 -55 to + 150 V A A °C 300 (0.063 in. (1.6mm) from case for 10s) Lead Temperature Thermal Resistance Parameter Typ. Max. RθJC Junction-to-Case ––– 1.7 RθCS Case-to-Sink, Flat, Greased Surface 1.0 ––– RθJA Junction-to-Ambient ––– 80 www.irf.com Units °C/W 1 03/27/07 IRF9Z30PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– -4.0 V VDS = VGS, ID = -250µA ––– -500 BVDSS Drain-to-Source Breakdown Voltage VGS(th) Gate Threshold Voltage -2.0 IGSS Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– ––– 500 Drain-to-Source Leakage Current ––– ––– -250 ––– ––– -1000 -18 ––– ––– A VDS > ID(on) X RDS(ON) (max)., VGS = -10V 0.093 0.14 Ω VGS = -10V, ID = -9.3A S VDS = 2 X VGS, IDS = -9.0A pF VDS = -25V IDSS ID(on) On- State Drain Current RDS(on) Static Drain-to-Source On-Resistance -50 ––– ––– nA µA VGS = -20V VGS = 20V VDS = Max. Rating, VGS = 0V VDS = Max. Rating x 0.8, VGS = 0V, TJ = 125°C gfs Forward Transconductance 3.1 4.7 ––– Ciss Input Capacitance ––– 900 ––– Coss Output Capacitance ––– 570 ––– Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, td(on) Turn-On Delay Time ––– 12 18 VDD = -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω tr Rise Time ––– 110 170 td(off) Turn-Off Delay Time ––– 21 32 tf Fall Time ––– 64 96 Qg Total Gate Charge (Gate -Source Plus Gate-Drain) ––– 26 39 VGS = -10V, ID = -18A, VDS = 0.8 Max. Rating Qgs Post-Vth Gate-to-Source Charge ––– 6.9 10 Qgd Gate-to-Drain Charge ––– 9.7 15 nC See Fig.17 for test circuit (Gate charge is essentially independent of operating temperature.) LD Internal Drain Inductance ––– 4.5 ––– LS VGS = 0V See Fig.16 ns nH Internal Source Inductance ––– 7.5 See Fig.10 ––– (MOSFET switching times are assentially independent of operating temperature) Measured from the drain Modified MOSFET symbol lead, 6mm (0.25 in.) from showing package to center of die. the internal Measured from the source device lead, 6mm (0.25 in.) from inductances. package to source bonding pad. Source-Drain Diode Ratings and Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Ton Forward Turn-on Time Min. Typ. Max. Units ––– ––– -18 A ––– ––– -60 ––– ––– -6.3 54 120 250 0.20 0.47 1.1 Conditions MOSFET symbol V showing the integral reverse p-n junction rectifier. TJ = 25°C, IS = -18A, VGS = 0V ns TJ = 25°C, IF = -18A µC di/dt = 100A/µs Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Note: TJ = 25°C to 150°C Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5). @ Vdd = -25V, TJ= 25°C, L = 100µH, R G = 25Ω. Pulse Test : Pulse width ≤ 300ms, Duty Cycle ≤ 2%. 2 www.irf.com IRF9Z30PbF www.irf.com 3 IRF9Z30PbF 4 www.irf.com IRF9Z30PbF www.irf.com 5 IRF9Z30PbF 6 www.irf.com IRF9Z30PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 2000 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 19 LINE C Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/2007 www.irf.com 7