MAC223A6FP, MAC223A8FP, MAC223A10FP Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as lighting systems, heater controls, motor controls and power supplies; or wherever full−wave silicon−gate−controlled devices are needed. • Off−State Voltages to 800 Volts • All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged Thermowatt Construction for Thermal Resistance and High Heat Dissipation • Gate Triggering Guaranteed in Four Modes • Indicates UL Registered — File #E69369 • Device Marking: Logo, Device Type, e.g., MAC223A6FP, Date Code http://onsemi.com ISOLATED TRIAC ( 25 AMPERES RMS 400 thru 800 VOLTS MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage(1) (TJ = −40 to +125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC223A6FP MAC223A8FP MAC223A10FP VDRM, VRRM On-State RMS Current (TC = +80°C)(2) Full Cycle Sine Wave 50 to 60 Hz IT(RMS) 25 Amps Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TC = 80°C) Preceded and followed by rated current ITSM 250 Amps Value Unit Volts 400 600 800 1 2 3 I2t 260 A2s Peak Gate Power (t p 2 μsec; TC = +80°C) PGM 20 Watts ISOLATED TO−220 Full Pack CASE 221C STYLE 3 Average Gate Power (t = 8.3 ms; TC = +80°C) PG(AV) 0.5 Watt PIN ASSIGNMENT Peak Gate Current (t p 2 μsec; TC = +80°C) IGM 2.0 Amps Peak Gate Voltage (t p 2 μsec; TC = +80°C) VGM "10 Volts V(ISO) 1500 Volts Operating Junction Temperature TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C — 8.0 in. lb. Circuit Fusing (t = 8.3 ms) RMS Isolation Voltage (TA = 25°C, Relative Humidity p 20%) ( ) Mounting Torque (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 ) 1 1 Main Terminal 1 2 Main Terminal 2 3 Gate ORDERING INFORMATION Device Package Shipping MAC223A6FP ISOLATED TO220FP 500/Box MAC223A8FP ISOLATED TO220FP 500/Box MAC223A10FP ISOLATED TO220FP 500/Box Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC223A6FP/D MAC223A6FP, MAC223A8FP, MAC223A10FP THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.2 °C/W Thermal Resistance, Case to Sink RθCS 2.2 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit IDRM, IRRM — — — — 10 2.0 μA mA Peak On-State Voltage (ITM = "35 A Peak, Pulse Width p 2 ms; Duty Cycle p 2%) VTM — 1.4 1.85 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(−), G(−); MT2(+), G(−) MT2(−), G(+) IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(−), G(−); MT2(+), G(−) MT2(−), G(+) VGT Gate Non−trigger Voltage (VD = 12 V, TJ = 125°C, RL = 100 Ω) All Quadrants VGD OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS mA — — 20 30 50 75 Volts — — 1.1 1.3 2.0 2.5 0.2 0.4 — Volts Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH — 10 50 mA Gate Controlled Turn−On Time (VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA) tgt — 1.5 — μs dv/dt — 40 — V/μs dv/dt(c) — 5.0 — V/μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 35 A Peak, Commutating di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C) http://onsemi.com 2 MAC223A6FP, MAC223A8FP, MAC223A10FP Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 (−) MT2 Quadrant III Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM 115 105 95 85 75 5 10 15 20 25 20 10 0 5 0 10 15 20 25 Figure 1. RMS Current Derating Figure 2. On−State Power Dissipation VD = 12 V RL = 100 W 1 0.5 0.3 0.2 −20 0 20 40 60 80 100 120 3 2 VD = 12 V RL = 100 W 1 0.5 0.3 0.2 0.1 −60 140 −40 −20 0 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical Gate Trigger Current Figure 4. Typical Gate Trigger Voltage 2 ITM = 200 mA GATE OPEN 1 0.5 0.3 0.2 0.1 −60 30 IT(RMS), RMS ON−STATE CURRENT (AMPS) 3 2 −40 40 IT(RMS), RMS ON−STATE CURRENT (AMPS) NORMALIZED GATE VOLTAGE 0 0.1 −60 NORMALIZED HOLD CURRENT PD(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 i TM , INSTANTANEOUS ON−STATE CURRENT (AMPS) NORMALIZED GATE CURRENT TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) MAC223A6FP, MAC223A8FP, MAC223A10FP −40 −20 0 20 40 60 80 100 120 140 200 100 50 TJ = 25°C 10 5 1 0.5 0.1 0 1 2 3 4 TJ, JUNCTION TEMPERATURE (°C) vTM, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) Figure 5. Typical Hold Current Figure 6. Typical On−State Characteristics http://onsemi.com 4 140 MAC223A6FP, MAC223A8FP, MAC223A10FP PACKAGE DIMENSIONS ISOLATED TO−220 Full Pack CASE 221C−02 ISSUE C −T− −B− F C P SEATING PLANE S N E A Q H 1 2 3 −Y− K Z J L R G D 3 PL 0.25 (0.010) M B M Y NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 −−− 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 −−− 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 STYLE 3: PIN 1. MT 1 2. MT 2 3. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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