isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD949F/951F/953F/955F DESCRIPTION ·DC Current Gain: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BD949F 60 BD951F 80 BD953F 100 BD955F 120 BD949F 60 BD951F 80 BD953F 100 BD955F 120 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 22 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc website：www.iscsemi.cn MAX UNIT 8.12 ℃/W 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD949F/951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD949F 60 BD951F 80 TYP. MAX IC= 100mA ; IB= 0 UNIT V BD953F 100 BD955F 120 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.0 V VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V 1.4 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 1 VCB= /2VCBOmax; IE= 0,TJ=150℃ 0.05 1 mA ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 500mA ; VCE= 4V hFE-2 DC Current Gain IC= 2A ; VCE= 4V Current-Gain—Bandwidth Product IC= 500mA ; VCE= 4V fT 40 20 3 MHz Switching Times ton Turn-On Time 0.3 μs 1.5 μs IC= 1.0A; IB1= -IB2= 0.1A toff Turn-Off Time isc website：www.iscsemi.cn 2