VAISH MBR7H60 Schottky barrier rectifier Datasheet

MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
New Product
formerly General Semiconductor
Schottky Barrier Rectifiers
Reverse Voltage 35 to 60 V
Forward Current 7.5 A
ITO-220AC (MBRF7Hxx)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
TO-220AC (MBR7Hxx)
0.110 (2.80)
0.100 (2.54)
0.185 (4.70)
0.415 (10.54) MAX.
0.175 (4.44)
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.148 (3.74)
DIA.
0.113 (2.87)
0.103 (2.62)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
0.603 (15.32)
0.573 (14.55)
PIN
1
2
0.191 (4.85)
0.171 (4.35)
PIN
1
2
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.131 (3.39)
DIA.
0.122 (3.08)
0.140 (3.56)
DIA.
0.130 (3.30)
0.055 (1.39)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.110 (2.80)
0.100 (2.54)
0.060 (1.52)
PIN 1
0.560 (14.22)
0.530 (13.46)
PIN 1
PIN 2
CASE
PIN 2
0.205 (5.20)
0.195 (4.95)
0.105 (2.67)
0.037 (0.94)
0.027 (0.68)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.037 (0.94)
0.027 (0.69)
0.022 (0.56)
0.014 (0.36)
Mounting Pad Layout TO-263AB
TO-263AB (MBRB7Hxx)
0.42
(10.66)
0.190 (4.83)
0.411 (10.45)
0.380 (9.65)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.33
(8.38)
0.245 (6.22)
MIN
K
Dimensions in inches
and (millimeters)
0.63
(17.02)
0.055 (1.40)
0.360 (9.14)
0.320 (8.13)
0.047 (1.19)
1
K
0.624 (15.85)
0.591 (15.00)
2
0.08
(2.032)
0-0.01 (0-0.254)
0.110 (2.79)
0.24
(6.096)
0.090 (2.29)
0.027 (0.686)
0.037 (0.940)
0.105 (2.67)
0.095 (2.41)
0.022 (0.55)
0.014 (0.36)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
0.205 (5.20)
K - HEATSINK
0.140 (3.56)
0.110 (2.79)
0.195 (4.95)
Mechanical Data
Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08oz., 2.24g
Document Number 88796
14-Mar-03
0.12
(3.05)
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temperature soldering guaranteed:
250 °C/10 seconds, 0.25" (6.35 mm) from case
• Rated for reverse surge and ESD
• 175 °C maximum operation junction temperature
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MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
(TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR7H35 MBR7H45 MBR7H50 MBR7H60
Unit
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
V
Working peak reverse voltage
VRWM
35
45
50
60
V
Maximum DC blocking voltage
VDC
35
45
50
60
V
Max. average forward rectified current (see fig. 1)
IF(AV)
7.5
A
Peak repetitive forward current at TC = 155 °C
(rated VR, 20 KHz sq. wave)
IFRM
15
A
Non-repetitive avalanche energy
at 25 °C, IAS = 4 A, L = 10 mH
EAS
80
mJ
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
IFSM
150
A
Peak repetitive reverse surge current
at tp = 2.0 µs, 1 KHZ
IRRM
1.0
0.5
A
Peak non-repetitive reverse energy (8/20 µs waveform)
ERSM
20
10
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
25
kV
dv/dt
10,000
V/µs
TJ
–65 to +175
°C
TSTG
–65 to +175
°C
VC
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
(1)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
4500
3500(2)
1500(3)
VISOL
V
Electrical Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Maximum instantaneous
forward voltage(4)
Symbol
at
at
at
at
IF =
IF =
IF =
IF =
7.5 A
7.5 A
15 A
15 A
Maximum instantaneous reverse current
at rated DC blocking voltage(4)
MBR7H35, MBR7H45
MBR7H50, MBR7H60
Unit
Typ
Max
Typ
Max
0.63
0.55
0.75
0.66
–
0.58
–
0.68
0.73
0.61
0.87
0.72
V
50
10
–
2.0
50
10
µA
mA
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
VF
–
0.50
–
0.61
TJ = 25 °C
TJ =125 °C
IR
–
3.0
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Thermal resistance from junction to case
RθJC
3.0
5.0
3.0
°C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300 ms pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
MBR7H35 – MBR7H60
TO-220AC
45
MBRF7H35 – MBRF7H60
ITO-220AC
45
Anti-Static tube, 50/tube, 2K/carton
TO-263AB
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB7H35 – MBRB7H60
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Package Option
Anti-Static tube, 50/tube, 2K/carton
Document Number 88796
14-Mar-03
MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 1 – Forward Current
Derating Curve
175
MBR, MBRB
8
6
MBRF
4
2
Peak Forward Surge Current (A)
Average Forward Current (A)
10
150
125
100
75
50
25
0
0
25
75
50
100
125
150
175
100
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Leakage Current
(mA)
Instantaneous Forward Current (A)
10
Number of Cycles at 60 HZ
10
TJ = 150°C
TJ = 25°C
1
TJ = 125°C
0.1
10
TJ = 150°C
1
TJ = 125°C
0.1
0.01
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
0.001
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
TJ = 25°C
0.0001
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
Fig. 6 – Typical Transient
Thermal Impedance
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
MBR7H35 -- MBR7H45
MBR7H50 -- MBR7H60
1
0.1
20
Instantaneous Forward Voltage (V)
Transeint Thermal Impedance (°C/W)
pF - Junction Capacitance
1
Case Temperature (°C)
100
1000
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
10
Reverse Voltage (V)
Document Number 88796
14-Mar-03
100
1.0
0.1
0.01
0.1
1
10
t, Pulse Duration (sec.)
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