MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series Vishay Semiconductors New Product formerly General Semiconductor Schottky Barrier Rectifiers Reverse Voltage 35 to 60 V Forward Current 7.5 A ITO-220AC (MBRF7Hxx) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) TO-220AC (MBR7Hxx) 0.110 (2.80) 0.100 (2.54) 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.154 (3.91) 0.370 (9.40) 0.360 (9.14) 0.148 (3.74) DIA. 0.113 (2.87) 0.103 (2.62) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.330 (8.38) 0.635 (16.13) 0.625 (15.87) 0.676 (17.2) 0.646 (16.4) 0.600 (15.5) 0.580 (14.5) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) PIN 1 2 0.191 (4.85) 0.171 (4.35) PIN 1 2 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.131 (3.39) DIA. 0.122 (3.08) 0.140 (3.56) DIA. 0.130 (3.30) 0.055 (1.39) 0.045 (1.14) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.110 (2.80) 0.100 (2.54) 0.060 (1.52) PIN 1 0.560 (14.22) 0.530 (13.46) PIN 1 PIN 2 CASE PIN 2 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.037 (0.94) 0.027 (0.68) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) 0.037 (0.94) 0.027 (0.69) 0.022 (0.56) 0.014 (0.36) Mounting Pad Layout TO-263AB TO-263AB (MBRB7Hxx) 0.42 (10.66) 0.190 (4.83) 0.411 (10.45) 0.380 (9.65) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) 0.245 (6.22) MIN K Dimensions in inches and (millimeters) 0.63 (17.02) 0.055 (1.40) 0.360 (9.14) 0.320 (8.13) 0.047 (1.19) 1 K 0.624 (15.85) 0.591 (15.00) 2 0.08 (2.032) 0-0.01 (0-0.254) 0.110 (2.79) 0.24 (6.096) 0.090 (2.29) 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.022 (0.55) 0.014 (0.36) 0.021 (0.53) 0.014 (0.36) PIN 1 PIN 2 0.205 (5.20) K - HEATSINK 0.140 (3.56) 0.110 (2.79) 0.195 (4.95) Mechanical Data Case: JEDEC TO-220AC, ITO-220AC & TO-263AB molded plastic body Terminals: Plated leads, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Position: Any Mounting Torque: 10 in-lbs maximum Weight: 0.08oz., 2.24g Document Number 88796 14-Mar-03 0.12 (3.05) Features • Plastic package has Underwriters Laboratory Flammability Classification 94 V-0 • Metal silicon junction, majority carrier conduction • Low forward voltage drop, low power loss and high efficiency • Guardring for overvoltage protection • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications • High temperature soldering guaranteed: 250 °C/10 seconds, 0.25" (6.35 mm) from case • Rated for reverse surge and ESD • 175 °C maximum operation junction temperature www.vishay.com 1 MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series Vishay Semiconductors formerly General Semiconductor Maximum Ratings (TC = 25 °C unless otherwise noted) Parameter Symbol MBR7H35 MBR7H45 MBR7H50 MBR7H60 Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Max. average forward rectified current (see fig. 1) IF(AV) 7.5 A Peak repetitive forward current at TC = 155 °C (rated VR, 20 KHz sq. wave) IFRM 15 A Non-repetitive avalanche energy at 25 °C, IAS = 4 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Peak repetitive reverse surge current at tp = 2.0 µs, 1 KHZ IRRM 1.0 0.5 A Peak non-repetitive reverse energy (8/20 µs waveform) ERSM 20 10 mJ Electrostatic discharge capacitor voltage Human body model: C = 100 pF, R = 1.5 kΩ 25 kV dv/dt 10,000 V/µs TJ –65 to +175 °C TSTG –65 to +175 °C VC Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range (1) RMS Isolation voltage (MBRF type only) from terminals to heatsink with t = 1.0 second, RH ≤ 30% 4500 3500(2) 1500(3) VISOL V Electrical Characteristics (TC = 25 °C unless otherwise noted) Parameter Maximum instantaneous forward voltage(4) Symbol at at at at IF = IF = IF = IF = 7.5 A 7.5 A 15 A 15 A Maximum instantaneous reverse current at rated DC blocking voltage(4) MBR7H35, MBR7H45 MBR7H50, MBR7H60 Unit Typ Max Typ Max 0.63 0.55 0.75 0.66 – 0.58 – 0.68 0.73 0.61 0.87 0.72 V 50 10 – 2.0 50 10 µA mA TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ =125 °C VF – 0.50 – 0.61 TJ = 25 °C TJ =125 °C IR – 3.0 Thermal Characteristics (TC = 25 °C unless otherwise noted) Parameter Symbol MBR MBRF MBRB Unit Thermal resistance from junction to case RθJC 3.0 5.0 3.0 °C/W Notes: (1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset (2) Clip mounting (on case), where leads do overlap heatsink (3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”) (4) Pulse test: 300 ms pulse width, 1% duty cycle Ordering Information Product Case Package Code MBR7H35 – MBR7H60 TO-220AC 45 MBRF7H35 – MBRF7H60 ITO-220AC 45 Anti-Static tube, 50/tube, 2K/carton TO-263AB 31 45 81 13” reel, 800/reel, 4.8K/carton Anti-Static tube, 50/tube, 2K/carton Anti-Static 13” reel, 800/reel, 4.8K/carton MBRB7H35 – MBRB7H60 www.vishay.com 2 Package Option Anti-Static tube, 50/tube, 2K/carton Document Number 88796 14-Mar-03 MBR7Hxx, MBRF7Hxx & MBRB7Hxx Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve 175 MBR, MBRB 8 6 MBRF 4 2 Peak Forward Surge Current (A) Average Forward Current (A) 10 150 125 100 75 50 25 0 0 25 75 50 100 125 150 175 100 Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics Instantaneous Reverse Leakage Current (mA) Instantaneous Forward Current (A) 10 Number of Cycles at 60 HZ 10 TJ = 150°C TJ = 25°C 1 TJ = 125°C 0.1 10 TJ = 150°C 1 TJ = 125°C 0.1 0.01 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 0.001 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 TJ = 25°C 0.0001 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance Fig. 6 – Typical Transient Thermal Impedance 10 TJ = 25°C f = 1.0 MHZ Vsig = 50mVp-p 100 10 MBR7H35 -- MBR7H45 MBR7H50 -- MBR7H60 1 0.1 20 Instantaneous Forward Voltage (V) Transeint Thermal Impedance (°C/W) pF - Junction Capacitance 1 Case Temperature (°C) 100 1000 TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) 1 10 Reverse Voltage (V) Document Number 88796 14-Mar-03 100 1.0 0.1 0.01 0.1 1 10 t, Pulse Duration (sec.) www.vishay.com 3