CHA2157 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The circuit is manufactured with a HEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features 3.5 dB noise figure 10 dB ± 1dB gain 15 dBm output power (-1dB gain comp.) DC power consumption, 80mA @ 3.3V Chip size : 1.71 x 1.04 x 0.10 mm Gain & Rloss (dB) The CHA2157 is a two stages low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. 15 10 5 0 -5 -10 -15 -20 Gain S11 S22 55 56 57 58 59 60 Frequency (GHz) Typical on Wafer Measurements Main Characteristics Tamb. = 25°C Symbol Parameter Min Fop Operating frequency range 55 G Small signal gain 8 NF Noise figure P1dB Output power at 1dB gain compression Id Bias current 13 Typ Max Unit 60 GHz 10 12 dB 3.5 4.5 dB 15 80 dBm 150 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA21579090 Specifications subject to change without notice 1/6 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 55-60GHz Low Noise Amplifier CHA2157 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.3V Symbol Fop G ∆G Parameter Min Operating frequency range (1) 55 Small signal gain (1) 8 Small signal gain flatness (1) Is Reverse isolation (1) NF Noise figure P1dB 20 Max Unit 60 GHz 10 12 dB ±1.0 ±2.0 dB 25 3.5 CW output power at 1dB compression (1) VSWRin Typ Input VSWR (1) VSWRout Output VSWR (1) 13 dB 4.5 15 dB dBm 3.0:1 6.0:1 3.0:1 6.0:1 Vd DC Voltage 3.3 3.8 V Id Bias current 80 150 mA (1) These values are representative for CW on-wafer measurements that are made without bonding wires at the RF ports. A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 150 mA Vg Gate bias voltage -2.0 to +0.4 V Pin Maximum peak input power overdrive (2) Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg TBD (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA21579090 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-60GHz Low Noise Amplifier CHA2157 Typical On Wafer Scattering Parameters Bias Conditions : Vd = +3.3V, Vg1 = Vg2 to have Id = 80 mA F(GHz) 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 S11 dB -6,19 -6,01 -5,78 -5,57 -5,32 -5,04 -4,8 -4,5 -4,32 -4,06 -3,83 -3,65 -3,56 -3,42 -3,33 -3,32 -3,35 -3,47 -3,69 -4,05 -4,58 -5,45 -6,88 -9,34 -13,51 -21,64 -13,04 -7,18 -4,19 -2,48 -1,56 -1,13 -0,93 -1,23 -2,14 -3,09 -4,76 -6,29 -7,54 -7,99 -7,63 -6,75 -5,78 -4,75 -4,31 -4,01 Ref. : DSCHA21579090 S11 deg 168,5 163,4 158,3 152,8 148,7 142,7 137,4 131,6 125,4 119,8 113,1 106,5 99,7 93,1 85,6 78,1 70,4 62,2 53,6 44,7 35 24,5 13,9 3,7 -1,3 49,9 95,8 87,7 70,7 53,6 37,1 22 6 -8,5 -22 -34,3 -42,4 -45,5 -46,3 -42,1 -39 -39,3 -43,8 -51,4 -63,3 -71,9 S12 dB -53,85 -53,05 -55,51 -63,53 -49,37 -51,91 -51,32 -52,83 -50,9 -49,33 -49,97 -49,38 -47,44 -45,59 -46,24 -43,98 -42,56 -41,07 -40,29 -40,08 -40,8 -41,16 -41,12 -42,27 -41,21 -41,07 -47,32 -50,87 -42,36 -38,05 -35,54 -34,48 -32,16 -28,67 -28,47 -29,18 -29,48 -27,33 -27,27 -27,59 -27,52 -27,7 -26,84 -26,96 -26,49 -26,42 S12 deg 104,2 83,1 61,9 136,7 58,7 58,7 48,4 40,4 67 39,6 36,3 37,1 39,9 23,7 25 12,4 2 -12,4 -28,3 -46,4 -63,2 -70,6 -84,2 -89,6 -108,8 -130,8 -151,5 -74,5 -79,2 -96,4 -113,9 -122,1 -127,2 -156,4 176,8 157,7 147,1 127,2 99,4 81,8 64,5 50,7 38,4 22,3 4,2 -10,1 S21 dB -4,75 -5,02 -5,8 -6,59 -6,68 -7,14 -7,51 -8,77 -9,37 -9,09 -10,11 -11,13 -11,39 -10,79 -9,24 -7,26 -5,66 -5,35 -5,21 -5,56 -5,61 -4,92 -3,29 -1,05 1,77 4,18 5,47 7,16 8,35 9,2 9,96 10,55 11,32 11,99 12,18 12,1 11,94 11,65 11,31 10,87 10,44 10 9,64 9,39 9,1 8,56 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 S21 deg -110,1 -126 -141,7 -154,4 -164,3 -174 172,8 162,3 162,4 150,7 142,7 139,8 143,2 145,5 145,2 139,8 125,3 110,7 98,9 91,8 88,6 89,3 88 83,8 74,4 55,5 38,5 20,8 -0,2 -19,7 -39,3 -58,1 -77 -98 -121 -142,7 -163,6 176,6 156,8 137,9 119,9 102,2 84,8 67,5 46,8 30,1 S22 dB -2,94 -3,07 -3,32 -3,34 -3,7 -4,2 -4,71 -5,05 -5,33 -6,14 -6,85 -7,43 -7,66 -7,83 -7,15 -5,72 -4,07 -2,81 -2,13 -1,91 -1,95 -2,12 -2,3 -2,51 -2,7 -3,22 -3,59 -4,06 -4,88 -5,68 -6,66 -7,73 -9,16 -10,87 -11,61 -11,33 -10,87 -10,03 -9,34 -8,91 -8,6 -8,49 -8,27 -8,12 -8,13 -7,89 S22 deg 146,8 142,5 138,2 134,5 127,7 123,4 120,3 118 114 111,7 111,1 113,4 116,1 120,6 127,2 129,5 126,3 117,8 107,8 97,8 88,9 80,9 73,4 66,2 58,2 50,2 43,3 34,9 26,9 20 12,8 6,5 0,1 0,2 6,6 7,5 5,3 2,7 -6,2 -16,1 -27 -37,5 -48,9 -59,8 -69,7 -80,5 Specifications subject to change without notice 55-60GHz Low Noise Amplifier CHA2157 Typical on Wafer Measurements 15 Gain & Rloss (dB) Gain & Rloss (dB) Bias conditions: Tamb = +25°C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA Gain 10 5 S11 0 -5 -10 15 10 Gain 5 S11 0 -5 -10 S22 -15 -15 S22 -20 -20 0 10 20 30 40 50 60 55 56 57 58 59 60 Frequency (GHz) Frequency (GHz) Typical packaged Measurements Gain & NF (dB) Gain & Rloss (dB) Bias conditions: Tamb = +25°C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA 15 10 Gain 5 0 -5 S22 S11 -10 -15 -20 50 52 54 56 58 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 60 Frequency (GHz) Ref. : DSCHA21579090 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Gain NF 50 52 54 56 58 60 Frequency (GHz) Specifications subject to change without notice 55-60GHz Low Noise Amplifier CHA2157 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHA21579090 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 55-60GHz Low Noise Amplifier CHA2157 Ordering Information Chip form : CHA2157-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA21579090 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice