UMS CHA2157-99F/00 55-60ghz low noise / medium power amplifier Datasheet

CHA2157
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The circuit is manufactured with a HEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
3.5 dB noise figure
10 dB ± 1dB gain
15 dBm output power (-1dB gain comp.)
DC power consumption, 80mA @ 3.3V
Chip size : 1.71 x 1.04 x 0.10 mm
Gain & Rloss (dB)
The CHA2157 is a two stages low noise and
medium power amplifier. It is designed for a
wide range of applications, from military to
commercial
communication
systems. The
backside of the chip is both RF and DC grounds.
This helps simplify the assembly process.
15
10
5
0
-5
-10
-15
-20
Gain
S11
S22
55
56
57
58
59
60
Frequency (GHz)
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min
Fop
Operating frequency range
55
G
Small signal gain
8
NF
Noise figure
P1dB
Output power at 1dB gain compression
Id
Bias current
13
Typ
Max
Unit
60
GHz
10
12
dB
3.5
4.5
dB
15
80
dBm
150
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA21579090
Specifications subject to change without notice
1/6
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise Amplifier
CHA2157
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.3V
Symbol
Fop
G
∆G
Parameter
Min
Operating frequency range (1)
55
Small signal gain (1)
8
Small signal gain flatness (1)
Is
Reverse isolation (1)
NF
Noise figure
P1dB
20
Max
Unit
60
GHz
10
12
dB
±1.0
±2.0
dB
25
3.5
CW output power at 1dB compression (1)
VSWRin
Typ
Input VSWR (1)
VSWRout Output VSWR (1)
13
dB
4.5
15
dB
dBm
3.0:1
6.0:1
3.0:1
6.0:1
Vd
DC Voltage
3.3
3.8
V
Id
Bias current
80
150
mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.0
V
Id
Drain bias current
150
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
Ta
Operating temperature range
-40 to +85
°C
Storage temperature range
-55 to +155
°C
Tstg
TBD
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA21579090
2/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Typical On Wafer Scattering Parameters
Bias Conditions : Vd = +3.3V, Vg1 = Vg2 to have Id = 80 mA
F(GHz)
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
S11
dB
-6,19
-6,01
-5,78
-5,57
-5,32
-5,04
-4,8
-4,5
-4,32
-4,06
-3,83
-3,65
-3,56
-3,42
-3,33
-3,32
-3,35
-3,47
-3,69
-4,05
-4,58
-5,45
-6,88
-9,34
-13,51
-21,64
-13,04
-7,18
-4,19
-2,48
-1,56
-1,13
-0,93
-1,23
-2,14
-3,09
-4,76
-6,29
-7,54
-7,99
-7,63
-6,75
-5,78
-4,75
-4,31
-4,01
Ref. : DSCHA21579090
S11
deg
168,5
163,4
158,3
152,8
148,7
142,7
137,4
131,6
125,4
119,8
113,1
106,5
99,7
93,1
85,6
78,1
70,4
62,2
53,6
44,7
35
24,5
13,9
3,7
-1,3
49,9
95,8
87,7
70,7
53,6
37,1
22
6
-8,5
-22
-34,3
-42,4
-45,5
-46,3
-42,1
-39
-39,3
-43,8
-51,4
-63,3
-71,9
S12
dB
-53,85
-53,05
-55,51
-63,53
-49,37
-51,91
-51,32
-52,83
-50,9
-49,33
-49,97
-49,38
-47,44
-45,59
-46,24
-43,98
-42,56
-41,07
-40,29
-40,08
-40,8
-41,16
-41,12
-42,27
-41,21
-41,07
-47,32
-50,87
-42,36
-38,05
-35,54
-34,48
-32,16
-28,67
-28,47
-29,18
-29,48
-27,33
-27,27
-27,59
-27,52
-27,7
-26,84
-26,96
-26,49
-26,42
S12
deg
104,2
83,1
61,9
136,7
58,7
58,7
48,4
40,4
67
39,6
36,3
37,1
39,9
23,7
25
12,4
2
-12,4
-28,3
-46,4
-63,2
-70,6
-84,2
-89,6
-108,8
-130,8
-151,5
-74,5
-79,2
-96,4
-113,9
-122,1
-127,2
-156,4
176,8
157,7
147,1
127,2
99,4
81,8
64,5
50,7
38,4
22,3
4,2
-10,1
S21
dB
-4,75
-5,02
-5,8
-6,59
-6,68
-7,14
-7,51
-8,77
-9,37
-9,09
-10,11
-11,13
-11,39
-10,79
-9,24
-7,26
-5,66
-5,35
-5,21
-5,56
-5,61
-4,92
-3,29
-1,05
1,77
4,18
5,47
7,16
8,35
9,2
9,96
10,55
11,32
11,99
12,18
12,1
11,94
11,65
11,31
10,87
10,44
10
9,64
9,39
9,1
8,56
3/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
S21
deg
-110,1
-126
-141,7
-154,4
-164,3
-174
172,8
162,3
162,4
150,7
142,7
139,8
143,2
145,5
145,2
139,8
125,3
110,7
98,9
91,8
88,6
89,3
88
83,8
74,4
55,5
38,5
20,8
-0,2
-19,7
-39,3
-58,1
-77
-98
-121
-142,7
-163,6
176,6
156,8
137,9
119,9
102,2
84,8
67,5
46,8
30,1
S22
dB
-2,94
-3,07
-3,32
-3,34
-3,7
-4,2
-4,71
-5,05
-5,33
-6,14
-6,85
-7,43
-7,66
-7,83
-7,15
-5,72
-4,07
-2,81
-2,13
-1,91
-1,95
-2,12
-2,3
-2,51
-2,7
-3,22
-3,59
-4,06
-4,88
-5,68
-6,66
-7,73
-9,16
-10,87
-11,61
-11,33
-10,87
-10,03
-9,34
-8,91
-8,6
-8,49
-8,27
-8,12
-8,13
-7,89
S22
deg
146,8
142,5
138,2
134,5
127,7
123,4
120,3
118
114
111,7
111,1
113,4
116,1
120,6
127,2
129,5
126,3
117,8
107,8
97,8
88,9
80,9
73,4
66,2
58,2
50,2
43,3
34,9
26,9
20
12,8
6,5
0,1
0,2
6,6
7,5
5,3
2,7
-6,2
-16,1
-27
-37,5
-48,9
-59,8
-69,7
-80,5
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Typical on Wafer Measurements
15
Gain & Rloss (dB)
Gain & Rloss (dB)
Bias conditions: Tamb = +25°C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA
Gain
10
5
S11
0
-5
-10
15
10
Gain
5
S11
0
-5
-10
S22
-15
-15
S22
-20
-20
0
10
20
30
40
50
60
55
56
57
58
59
60
Frequency (GHz)
Frequency (GHz)
Typical packaged Measurements
Gain & NF (dB)
Gain & Rloss (dB)
Bias conditions: Tamb = +25°C, Vd = 3.3V, Vg1 = Vg2 to have Id = 80mA
15
10
Gain
5
0
-5
S22
S11
-10
-15
-20
50
52
54
56
58
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
60
Frequency (GHz)
Ref. : DSCHA21579090
4/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Gain
NF
50
52
54
56
58
60
Frequency (GHz)
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Chip Assembly and Mechanical Data
Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered.
Bonding pad positions.
( Chip thickness : 100µm. All dimensions are in micrometers )
Ref. : DSCHA21579090
5/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
55-60GHz Low Noise Amplifier
CHA2157
Ordering Information
Chip form
:
CHA2157-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S.
assumes no responsability for the consequences of use of such information nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under
any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this
publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical
components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S.
Ref. : DSCHA21579090
6/6
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
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