Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V PINNING - SOT399 PIN 1 base 2 collector 3 emitter case isolated MAX. UNIT 4.5 0.4 1500 700 8 15 45 1.0 0.6 V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.12 A ICsat = 4.5 A; IB(end) = 1.1 A PIN CONFIGURATION DESCRIPTION TYP. SYMBOL c case b e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 700 8 15 4 6 100 5 45 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink without heatsink compound - 3.7 K/W Rth j-hs Junction to heatsink with heatsink compound - 2.8 K/W Rth j-a Junction to ambient in free air 35 - K/W 1 Turn-off current. November 1997 1 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 700 13.5 - 1.0 - mA V V 4 13 5.5 1.0 1.1 7.0 V V TYP. MAX. UNIT 80 - pF 5.0 0.4 6.0 0.6 µs µs 4.7 0.25 5.7 0.35 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 2 ICES ICES Collector cut-off current IEBO BVEBO VCEOsust Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 4.5 A; IB = 1.12 A IC = 4.5 A; IB = 1.7 A IC = 100 mA;VCE = 5 V IC = 4.5 A;VCE = 1 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz ts tf Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICsat = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) Switching times (38 kHz line deflection circuit) ICsat = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts tf Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). November 1997 2 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IBend Vertical t 1R 100R 6V 30-60 Hz - IBM Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat 1mH 250 200 LB IBend 100 D.U.T. 12nF BY228 -VBB 0 VCE / V min VCEOsust Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times test circuit. ICsat 100 h FE DIODE t 5V IBend IB 10 t 20us 1V 26us Tj = 25 C 64us Tj = 125 C VCE 1 0.01 Fig.3. Switching times waveforms. November 1997 0.1 1 10 IC / A t Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE 3 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor 1.2 BU2508AX VBESAT / V 1.1 VCESAT / V 10 Tj = 25 C Tj = 25 C Tj = 125 C Tj = 125 C 1 6A 0.9 4.5A 0.8 1 IC/IB= 3 4 5 0.7 0.6 3A IC=2A 0.5 0.4 0.1 1 IC / A 0.1 10 Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB 1 0.1 1 IB / A 10 Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC VCESAT / V Eoff / uJ 1000 IC/IB= 0.9 0.8 5 IC = 4.5A 0.7 4 3.5A 0.6 3 0.5 100 Tj = 25 C 0.4 Tj = 125 C 0.3 0.2 0.1 0 10 0.1 1 IC / A 10 0.1 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 1.2 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C Tj = 125 C 1 0.9 IC= 6A 4.5A 3A 2A 0.8 0.7 0.6 0 1 2 IB / A 3 4 ts, tf / us ts IC = 4.5A 3.5A tf 0.1 1 IB / A 10 Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC November 1997 10 Fig.11. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 16 kHz VBESAT / V 1.1 1 IB / A 4 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX IC / A 100 100 IC / A = 0.01 = 0.01 ICM max ICM max tp = IC max 10 10 us II II Ptot max 10 us Ptot max 1 1 100 us 100 us 1 ms I 1 ms I 0.1 0.1 10 ms 10 ms DC DC 0.01 0.01 1 1000 100 10 1 VCE / V 10 1000 100 VCE / V Fig.13. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. Fig.15. Forward bias safe operating area. Ths = 25˚C I Region of permissible DC operation. II Extension for repetitive pulse operation. NB: Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. 120 tp = IC max 10 NB: Mounted without heatsink compound and 30 ± 5 newton force on the centre of the envelope. Normalised Power Derating PD% with heatsink compound 110 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 Ths / C 100 120 140 Fig.14. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths) November 1997 5 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX MECHANICAL DATA Dimensions in mm 5.8 max 16.0 max Net Mass: 5.88 g 3.0 0.7 4.5 3.3 10.0 27 max 25 25.1 25.7 22.5 max 5.1 2.2 max 18.1 min 4.5 1.1 0.4 M 2 0.95 max 5.45 5.45 3.3 Fig.16. SOT399; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". November 1997 6 Rev 2.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1997 7 Rev 2.300