UNISONIC TECHNOLOGIES CO., LTD MJE13003D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds. FEATURES * Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode INTERNAL SCHEMATIC DIAGRAM C (2) B (1) E (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003DL-T60-K MJE13003DG-T60-K MJE13003DL-T92-B MJE13003DG-T92-B MJE13003DL-T92-K MJE13003DG-T92-K MJE13003DL-T92-R MJE13003DG-T92-R MJE13003DL-TA3-T MJE13003DG-TA3-T www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-126 TO-92 TO-92 TO-92 TO-220 1 B B B B B Pin Assignment 2 C C C C C 3 E E E E E Packing Bulk Tape Box Bulk Tape Reel Tube 1 of 4 QW-R204-025.d MJE13003D Preliminary NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector- Emitter Voltage (VBE =0) VCES 700 V Collector-Emitter Voltage (IB =0) VCEO 400 V Emitter-Base Voltage (IC=0, IB=0.75A, tP<10μS) VEBO 9 V Collector Current IC 1.5 A Collector Peak Current (tP<5ms) ICM 3 A Base Current IB 0.75 A Base Peak Current (tP<5ms) IBM 1.5 A TO-126 40 Power Dissipation (TC=25°C) TO-92 PD 30 W TO-220 70 Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage (Note) Collector Cut-Off Current SYMBOL BVEBO VCEO(SUS) ICES Collector-Emitter Saturation Voltage (Note) VCE(SAT) Base-Emitter Saturation Voltage (Note) VBE(SAT) hFE DC Current Gain Resistive Load Rise Time Storage Time Fall Time Inductive Load Storage Time tR tS tF tS VF Diode Forward Voltage Note: Pulse Test: Pulse duration≤300μs, Duty cycle≤2 % UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS IE =10mA, IC=0 IC=10mA, IB=0 VCE =700V,VBE =0 IC=0.5 A, IB=0.1 A IC=1 A, IB=0.25 A IC=1.5 A, IB=0.5 A IC=0.5 A, IB=0.1 A IC=1 A, IB=0.25 A IC=0.5A, VCE =5 V IC=1 A, VCE =5 V VCC=125 V, IC=1 A, IB1=0.2 A, IB2=-0.2 A tP=25μs IC=1 A, IB1=0.2 A,VBE =-5 V, L=50mH, VCLAMP=300V IF=0.5 A MIN 9 400 8 5 TYP MAX UNIT 18 V V 1 mA 0.5 V 1 V 3 V 1 V 1.2 V 51 30 1 μs 4 μs 0.7 μs 0.8 μs 1.5 V 2 of 4 QW-R204-025.d MJE13003D Preliminary NPN SILICON TRANSISTOR TEST CIRCURTS Inductive Load Switching Test Circuit (3) IC (1) IB VCE RBB(2) VBB VClamp + VCC Notes: 1. Fast Electronic Switch 2. Non-Inductive Resistor 3. Fast Recovery Rectifier Resistive Load Switching Test Circuit IC (1) RC(2) IB VCE RBB(2) VBB + VCC Notes: 1. Fast Electronic Switch 2. Non-Inductive Resistor UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R204-025.d MJE13003D Preliminary NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R204-025.d