TI1 INA196AIDBVR Current shunt monitor â 16 v to 80 v common-mode range Datasheet

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INA193, INA194, INA195
INA196, INA197, INA198
SBOS307G – MAY 2004 – REVISED JANUARY 2015
INA19x Current Shunt Monitor −16 V to +80 V Common-Mode Range
1 Features
3 Description
•
The INA193−INA198 family of current shunt monitors
with voltage output can sense drops across shunts at
common-mode voltages from −16 V to +80 V,
independent of the INA19x supply voltage. They are
available with three output voltage scales: 20 V/V, 50
V/V, and 100 V/V. The 500 kHz bandwidth simplifies
use in current control loops. The INA193−INA195
devices provide identical functions but alternative pin
configurations to the INA196−INA198 devices,
respectively.
1
•
•
•
•
•
Wide Common-Mode Voltage:
−16 V to +80 V
Low Error: 3.0% Over Temp (maximum)
Bandwidth: Up to 500 kHz
Three Transfer Functions Available: 20 V/V, 50
V/V, and 100 V/V
Quiescent Current: 900 μA (maximum)
Complete Current Sense Solution
The INA193−INA198 devices operate from a single
2.7-V to 18-V supply, drawing a maximum of 900 μA
of supply current. They are specified over the
extended operating temperature range (−40°C to
+125°C), and are offered in a space-saving SOT-23
package.
2 Applications
•
•
•
•
•
•
•
Welding Equipment
Notebook Computers
Cell Phones
Telecom Equipment
Automotive
Power Management
Battery Chargers
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
INA193
INA194
INA195
SOT-23 (5)
INA196
2.90 mm × 1.60 mm
INA197
INA198
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
Negative
and
Positive
Common-Mode
Voltage
IS
RS
VIN+
-16V to +80V
V+
+2.7V to +18V
VIN+
VIN-
R1
R1
Load
A1
A2
OUT
INA193-INA198
RL
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
INA193, INA194, INA195
INA196, INA197, INA198
SBOS307G – MAY 2004 – REVISED JANUARY 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
3
4
7.1
7.2
7.3
7.4
7.5
7.6
4
4
4
4
5
7
Absolute Maximum Ratings ......................................
ESD Ratings ............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 11
8.1 Overview ................................................................. 11
8.2 Functional Block Diagram ....................................... 11
8.3 Feature Description................................................. 12
8.4 Device Functional Modes........................................ 16
9
Application and Implementation ........................ 22
9.1 Application Information............................................ 22
9.2 Typical Application .................................................. 22
10 Power Supply Recommendations ..................... 23
11 Layout................................................................... 23
11.1 Layout Guidelines ................................................. 23
11.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
Related Links ........................................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision F (February 2010) to Revision G
•
Page
Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 4
Changes from Revision E (August 2006) to Revision F
Page
•
Updated document format to current standards..................................................................................................................... 1
•
Added test conditions to Output, Total Output Error parameter in Electrical Characteristics: VS = +12V.............................. 5
2
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SBOS307G – MAY 2004 – REVISED JANUARY 2015
5 Device Comparison Table
PART NUMBER
GAIN
PINOUT(1)
INA193
20 V/V
Pinout #1
INA194
50 V/V
Pinout #1
INA195
100 V/V
Pinout #1
INA196
20 V/V
Pinout #2
INA197
50 V/V
Pinout #2
INA198
100 V/V
Pinout #2
(1) See Pin Configuration and Functions for Pinout #1 and Pinout #2.
6 Pin Configuration and Functions
DBV Package
5-Pin SOT-23
INA193, INA194, INA195 Top View
OUT
1
GND
2
VIN+
3
5
4
DBV Package
5-Pin SOT-23
INA196, INA197, INA198 Top View
V+
VIN-
OUT
1
GND
2
V+
3
5
VIN-
4
VIN+
Pin Functions
PIN
NAME
INA193,
INA194,
INA195
INA196,
INA197,
INA198
TYPE
DESCRIPTION
DBV
DBV
GND
2
2
OUT
1
1
O
V+
5
3
Analog
VIN+
3
4
I
Connect to supply side of shunt resistor
VIN–
4
5
I
Connect to load side of shunt resistor
GND
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Ground
Output voltage
Power supply, 2.7 V to 18 V
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
18
V
Supply Voltage
Analog Inputs, VIN+, VIN−
–18
18
V
Differential (VIN+) – (VIN−)
–18
18
V
Common-Mode (2)
–16
80
V
GND – 0.3
(V+) + 0.3
V
5
mA
150
°C
150
°C
150
°C
Analog Output, Out
(2)
Input Current Into Any Pin (2)
Operating Temperature
–55
Junction Temperature
Storage temperature, Tstg
(1)
(2)
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5mA.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins (1)
±4000
Charged device model (CDM), per JEDEC specification JESD22-C101,
all pins (2)
±1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VCM
Common-mode input voltage
12
V
V+
Operating supply voltage
12
V
TA
Operating free-air temperature
-40
125
ºC
7.4 Thermal Information
INA19x
THERMAL METRIC (1)
DBV (SOT-23)
UNIT
5 PINS
RθJA
Junction-to-ambient thermal resistance
221.7
RθJC(top)
Junction-to-case (top) thermal resistance
144.7
RθJB
Junction-to-board thermal resistance
49.7
ψJT
Junction-to-top characterization parameter
26.1
ψJB
Junction-to-board characterization parameter
49.0
(1)
4
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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7.5 Electrical Characteristics
All specifications at TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
PARAMETER
TEST CONDITIONS
TA = −40°C to +125°C
TA = 25°C
MIN
TYP
MAX
UNIT
TYP
MAX
MIN
0.15
(VS – 0.2)/Gain
–16
V
80
–16
V
INPUT
VSENSE = VIN+ − VIN−
VSENSE
Full-Scale Input Voltage
VCM
Common-Mode Input
Range
CMR
Common-Mode Rejection VIN+ = −16 V to 80 V
Common-Mode
Rejection, Over
Temperature
VOS
80
94
dB
VIN+ = 12 V to 80 V
Offset Voltage, RTI
100
±0.5
120
dB
2
mV
Offset Voltage, RTI Over
Temperature
0.5
dVOS/dT
Offset Voltage, RTI vs
Temperature
2.5
PSR
Offset Voltage, RTI vs
Power Supply
IB
Input Bias Current, VIN−
pin
VS = 2.7 V to 18 V, VIN+ = 18 V
3
mV
μV/°C
5
100
μV/V
±8
±16
μA
OUTPUT (VSENSE ≥ 20mV)
G
Gain
20
V/V
INA194, INA197
50
V/V
INA195, INA198
100
V/V
VSENSE = 20 mV to 100 mV,
TA = 25°C
Gain Error
Gain Error Over
Temperature
Total Output Error
INA193, INA196
±0.2%
±1%
VSENSE = 20 mV to 100 mV
(1)
VSENSE = 100 mV
±2
±0.75%
±2.2%
Total Output Error Over
Temperature
Nonlinearity Error
RO
±1%
VSENSE = 20 mV to 100 mV
Output Impedance
Maximum Capacitive
Load
No Sustained Oscillation
All
Devices
Output (2)
±0.002%
±0.1%
1.5
Ω
10
nF
−16 V ≤ VCM < 0 V,
VSENSE < 20 mV
300
VS < VCM ≤ 80 V,
VSENSE < 20 mV
300
mV
INA193,
INA196
INA194,
INA197
±3%
0 V ≤ VCM ≤ VS,
VS = 5 V,
VSENSE < 20 mV
INA195,
INA198
0.4
V
1
V
2
V
VOLTAGE OUTPUT (3) (RL = 100 kΩ to GND)
Swing to V+ PowerSupply Rail
(V+) – 0.1
(V+) – 0.2
Swing to GND (4)
(VGND) + 3
(VGND) + 50
V
mV
FREQUENCY RESPONSE
INA193,
INA196
BW
Bandwidth
INA194,
INA197
CLOAD = 5 pF
INA195,
INA198
(1)
(2)
(3)
(4)
500
kHz
300
kHz
200
kHz
Total output error includes effects of gain error and VOS.
For details on this region of operation, see the Accuracy Variations as a Result of VSENSE and Common-Mode Voltage section.
See Typical Characteristic curve Output Swing vs Output Current, Figure 7.
Specified by design.
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Electrical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
PARAMETER
Phase Margin
SR
tS
TEST CONDITIONS
CLOAD < 10 nF
TYP
MAX
MIN
TYP
MAX
UNIT
40
Slew Rate
Settling Time (1%)
TA = −40°C to +125°C
TA = 25°C
MIN
VSENSE = 10 mV to 100 mVPP,
CLOAD = 5 pF
1
V/μs
2
μs
40
nV/√Hz
NOISE, RTI
Voltage Noise Density
POWER SUPPLY
VS
Operating Range
2.7
IQ
Quiescent Current
VOUT = 2 V
Quiescent Current Over
Temperature
VSENSE = 0 mV
700
18
900
V
μA
370
950
μA
TEMPERATURE RANGE
θJA
6
Specified Temperature
Range
–40
125
°C
Operating Temperature
Range
–55
150
°C
Storage Temperature
Range
–65
150
°C
Thermal Resistance,
SOT23
200
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°C/W
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7.6 Typical Characteristics
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
45
40
G = 50
35
Gain (dB)
30
G = 100
40
G = 50
35
Gain (dB)
45
CLOAD = 1000pF
G = 100
G = 20
25
20
30
20
15
15
10
10
5
G = 20
25
5
10k
100k
10k
1M
100k
Frequency (Hz)
Figure 1. Gain vs Frequency
Figure 2. Gain vs Frequency
20
140
18
130
Common- Mode and
Power- Supply Rejection (dB)
100V/V
16
VOUT (V)
14
50V/V
12
10
8
20V/V
6
4
120
CMR
110
100
90
PSR
80
70
60
50
2
40
0
20
100
200
300
400
500
600
700
800
900
10
100
1k
VDIFFERENTIAL (mV)
10k
100k
Frequency (Hz)
Figure 3. Gain Plot
Figure 4. Common-Mode and Power-Supply Rejection vs
Frequency
4.0
0.1
3.5
0.09
0.08
3.0
Output Error (%)
Output Error
(% error of the ideal output value)
1M
Frequency (Hz)
2.5
2.0
1.5
1.0
0.07
0.06
0.05
0.04
0.03
0.02
0.5
0.01
0
0
50
100 150
200
250 300
350 400 450 500
VSENSE (mV)
Figure 5. Output Error vs VSENSE
Copyright © 2004–2015, Texas Instruments Incorporated
0
-16 -12 -8 -4
0
4
8
12 16 20
...
76 80
Common-Mode Voltage (V)
Figure 6. Output Error vs Common-Mode Voltage
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Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
12
1000
11
10
Sourcing Current
9
800
+25°C
8
700
-40°C
+125°C
7
6
VS = 3V
5
Sourcing Current
+25°C
4
-40°C
2
+125°C
0
400
300
200
100
0
5
0
500
Output stage is designed
to source current. Current
sinking capability is
approximately 400mA.
3
1
600
IQ (mA)
Output Voltage (V)
900
VS = 12V
10
20
15
25
30
2
1
0
Output Current (mA)
9
10
10
7.5
Input Bias Current (PA)
Input Bias Current (PA)
8
12.5
IN-
10
IN+
5
2.5
0
-2.5
-5
7.5
5
2.5
0
-2.5
-5
-7.5
-7.5
-10
-10
-12.5
-20
-10
0
10
20
30
40
50
Common-Mode Voltage (V)
60
70
80
IN+
IN-
-12.5
-20
-10
0
D001
Figure 9. Input Bias Current vs Common Mode Voltage
Vs=5 V
10
20
30
40
50
Common-Mode Voltage (V)
VS = 2.7V
675
575
475
VS = 12V
VSENSE = 0mV:
VS = 2.7V
275
Output Short-Circuit Current (mA)
VS = 12V
60
70
80
D102
Figure 10. Input Bias Current vs Common Mode Voltage
Vs=12 V
34
VSENSE = 100mV:
775
IQ (mA)
7
6
15
12.5
-40°C
30
+25°C
26
+125°C
22
18
14
10
6
175
-16 -12 -8 -4
0
4
8
12 16
20
...
76 80
VCM (V)
Figure 11. Quiescent Current vs Common-Mode Voltage
8
5
Figure 8. Quiescent Current vs Output Voltage
15
375
4
Output Voltage (V)
Figure 7. Positive Output Voltage Swing vs Output Current
875
3
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2.5 3.5
4.5
5.5 6.5
7.5
8.5
9.5 10.5 11.5 17
18
Supply Voltage (V)
Figure 12. Output Short-Circuit Current vs Supply Voltage
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Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
G = 20
Output Voltage (50mV/div)
Output Voltage (500mV/div)
G = 20
VSENSE = 10mV to 20mV
VSENSE = 10mV to 100mV
Time (2ms/div)
Time (2ms/div)
Figure 13. Step Response
Figure 14. Step Response
G = 50
Output Voltage (50mV/div)
Output Voltage (100mV/div)
G = 20
VSENSE = 90mV to 100mV
VSENSE = 10mV to 20mV
Time (2ms/div)
Time (5ms/div)
Figure 15. Step Response
Figure 16. Step Response
G = 50
Output Voltage (1V/div)
Output Voltage (100mV/div)
G = 50
VSENSE = 10mV to 100mV
Time (5ms/div)
Figure 17. Step Response
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VSENSE = 90mV to 100mV
Time (5ms/div)
Figure 18. Step Response
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Typical Characteristics (continued)
All specifications at TA = 25°C, VS = 12 V, and VIN+ = 12 V, and VSENSE = 100 mV, unless otherwise noted.
Output Voltage (2V/div)
G = 100
VSENSE = 10mV to 100mV
Time (10ms/div)
Figure 19. Step Response
10
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8 Detailed Description
8.1 Overview
The INA193−INA198 family of current shunt monitors with voltage output can sense drops across shunts at
common-mode voltages from −16 V to +80 V, independent of the INA19x supply voltage. They are available with
three output voltage scales: 20 V/V, 50 V/V, and 100 V/V. The 500-kHz bandwidth simplifies use in current
control loops. The INA193−INA195 devices provide identical functions but alternative pin configurations to the
INA196−INA198, respectively.
The INA193−INA198 devices operate from a single +2.7-V to +18-V supply, drawing a maximum of 900 μA of
supply current. They are specified over the extended operating temperature range (−40°C to +125°C), and are
offered in a space-saving SOT-23 package.
8.2 Functional Block Diagram
VIN+
VIN
R1(1)
5 k:
R1(1)
5 k:
V+
A1
A2
G = 20, RL = 100 k:
G = 50, RL = 250 k:
G = 100, RL = 500 k:
INA193-INA198
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OUT
RL(1)
GND
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8.3 Feature Description
8.3.1 Basic Connection
Figure 20 shows the basic connection of the INA193-INA198. To minimize any resistance in series with the shunt
resistance, connect the input pins, VIN+ and VIN−, as closely as possible to the shunt resistor.
Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
VIN+
-16V to +80V
RS
IS
V+
+2.7V to +18V
VIN+
VIN-
R1
R2
Load
OUT
INA193-INA198
RL
Figure 20. INA193-INA198 Basic Connection
8.3.2 Selecting RS
The value chosen for the shunt resistor, RS, depends on the application and is a compromise between smallsignal accuracy and maximum permissible voltage loss in the measurement line. High values of RS provide better
accuracy at lower currents by minimizing the effects of offset, while low values of RS minimize voltage loss in the
supply line. For most applications, best performance is attained with an RS value that provides a full-scale shunt
voltage range of 50 mV to 100 mV. Maximum input voltage for accurate measurements is 500 mV.
8.3.3 Inside the INA193-INA198
The INA193-INA198 devices use a new, unique internal circuit topology that provides common-mode range
extending from −16 to 80 V while operating from a single power supply. The common-mode rejection in a classic
instrumentation amplifier approach is limited by the requirement for accurate resistor matching. By converting the
induced input voltage to a current, the INA193-INA198 devices provide common-mode rejection that is no longer
a function of closely matched resistor values, providing the enhanced performance necessary for such a wide
common-mode range. A simplified diagram (shown in Figure 21) shows the basic circuit function. When the
common-mode voltage is positive, amplifier A2 is active.
12
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Feature Description (continued)
The differential input voltage, (VIN+) − (VIN−) applied across RS, is converted to a current through a resistor. This
current is converted back to a voltage through RL, and then amplified by the output buffer amplifier. When the
common-mode voltage is negative, amplifier A1 is active. The differential input voltage, (VIN+) − (VIN−) applied
across RS, is converted to a current through a resistor. This current is sourced from a precision current mirror
whose output is directed into RL converting the signal back into a voltage and amplified by the output buffer
amplifier. Patent-pending circuit architecture ensures smooth device operation, even during the transition period
where both amplifiers A1 and A2 are active.
VIN+
VIN
R1(1)
5 k:
R1(1)
5 k:
V+
A1
A2
G = 20, RL = 100 k:
G = 50, RL = 250 k:
G = 100, RL = 500 k:
INA193-INA198
OUT
RL(1)
GND
(1) Nominal resistor values are shown. ±15% variation is possible. Resistor ratios are matched to ±1%.
Figure 21. INA193-INA198 Simplified Circuit Diagram
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RSHUNT
LOAD
+12V
I1
+5V
VIN+
VIN-
V+
V+
OUT
for
+12V
Common-Mode
INA193-INA198
GND
OUT
for
-12V
Common-Mode
INA193-INA198
VIN+
VIN- GND
RSHUNT
LOAD
-12V
I2
Figure 22. Monitor Bipolar Output Power-Supply Current
14
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Up to +80V
RSHUNT
Solenoid
VIN+
+2.7V to +18V
VINV+
OUT
INA193-INA198
Figure 23. Inductive Current Monitor Including Flyback
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VIN+
VIN-
V+
For output
signals > comparator trip-point.
R1
OUT
TLV3012
INA193-INA198
R2
(a) INA193-INA198 output adjusted by voltage divider.
VIN+
VIN-
REF
1.25V
Internal
Reference
V+
OUT
TLV3012
INA193-INA198
R1
(b) Comparator reference voltage adjusted by voltage divider.
R2
REF
1.25V
Internal
Reference
For use with
small output signals.
Figure 24. INA193-INA198 with Comparator
8.4 Device Functional Modes
8.4.1 Input Filtering
An obvious and straightforward location for filtering is at the output of the INA193-INA198 devices; however, this
location negates the advantage of the low output impedance of the internal buffer. The only other option for
filtering is at the input pins of the INA193-INA198 devices, which is complicated by the internal 5-kΩ + 30% input
impedance; this is illustrated in Figure 25. Using the lowest possible resistor values minimizes both the initial shift
in gain and effects of tolerance. The effect on initial gain is given by Equation 1:
16
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Device Functional Modes (continued)
GainError% = 100 -
5kW
5kW + RFILT
´ 100
(1)
Total effect on gain error can be calculated by replacing the 5-kΩ term with 5 kΩ − 30%, (or 3.5 kΩ) or 5 kΩ +
30% (or 6.5 kΩ). The tolerance extremes of RFILT can also be inserted into the equation. If a pair of 100-Ω 1%
resistors are used on the inputs, the initial gain error will be approximately 2%. Worst-case tolerance conditions
will always occur at the lower excursion of the internal 5-kΩ resistor (3.5 kΩ), and the higher excursion of RFILT −
3% in this case.
Note that the specified accuracy of the INA193-INA198 devices must then be combined in addition to these
tolerances. While this discussion treated accuracy worst-case conditions by combining the extremes of the
resistor values, it is appropriate to use geometric mean or root sum square calculations to total the effects of
accuracy variations.
RSHUNT << RFILTER
LOAD
VSUPPLY
RFILT < 100W
RFILT < 100W
CFILT
f-3dB
1
2p (2 RFILT) CFILT
f-3dB =
+5V
VIN+
VIN-
R1
5kW
V+
R1
5kW
OUT
INA193-INA198
RL
Figure 25. Input Filter (Gain Error − 1.5% To −2.2%)
8.4.2 Accuracy Variations as a Result of VSENSE and Common-Mode Voltage
The accuracy of the INA193−INA198 current shunt monitors is a function of two main variables: VSENSE (VIN+ −
VIN−) and common-mode voltage, VCM, relative to the supply voltage, VS. VCM is expressed as (VIN+ + VIN−)/2;
however, in practice, VCM is seen as the voltage at VIN+ because the voltage drop across VSENSE is usually small.
This section addresses the accuracy of these specific operating regions:
Normal Case 1: VSENSE ≥ 20mV, VCM ≥ VS
Normal Case 2: VSENSE ≥ 20mV, VCM < VS
Low VSENSE Case 1: VSENSE < 20mV, −16V ≤ VCM < 0
Low VSENSE Case 2: VSENSE < 20mV, 0V ≤ VCM ≤ VS
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Device Functional Modes (continued)
Low VSENSE Case 3: VSENSE < 20mV, VS < VCM ≤ 80V
8.4.2.1 Normal Case 1: VSENSE ≥ 20mv, VCM ≥ VS
This region of operation provides the highest accuracy. Here, the input offset voltage is characterized and
measured using a two-step method. First, the gain is determined by Equation 2.
VOUT1 - VOUT2
G=
100mV - 20mV
where:
VOUT1 = Output Voltage with VSENSE = 100mV
VOUT2 = Output Voltage with VSENSE = 20mV
(2)
Then the offset voltage is measured at VSENSE = 100mV and referred to the input (RTI) of the current shunt
monitor, as shown in Equation 3.
VOUT1
VOSRTI (Referred-To-Input) =
- 100mV
G
(3)
In the Typical Characteristics, the Output Error vs Common-Mode Voltage curve (Figure 6) shows the highest
accuracy for this region of operation. In this plot, VS = 12 V; for VCM ≥ 12 V, the output error is at its minimum.
This case is also used to create the VSENSE ≥ 20-mV output specifications in the Electrical Characteristics table.
8.4.2.2 Normal Case 2: VSENSE ≥ 20mv, VCM < VS
This region of operation has slightly less accuracy than Normal Case 1 as a result of the common-mode
operating area in which the part functions, as seen in the Output Error vs Common-Mode Voltage curve
(Figure 6). As noted, for this graph VS = 12 V; for VCM < 12 V, the Output Error increases as VCM becomes less
than 12 V, with a typical maximum error of 0.005% at the most negative VCM = −16V.
18
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Device Functional Modes (continued)
8.4.2.3 Low VSENSE Case 1: VSENSE < 20mV, −16v ≤ VCM < 0; and Low VSENSE Case 3: VSENSE < 20mV, VS <
VCM ≤ 80V
Although the INA193−INA198 family of devices are not designed for accurate operation in either of these
regions, some applications are exposed to these conditions; for example, when monitoring power supplies that
are switched on and off while VS is still applied to the INA193−INA198 devices. It is important to know what the
behavior of the devices will be in these regions.
As VSENSE approaches 0 mV, in these VCM regions, the device output accuracy degrades. A larger-than-normal
offset can appear at the current shunt monitor output with a typical maximum value of VOUT = 300 mV for VSENSE
= 0 mV. As VSENSE approaches 20 mV, VOUT returns to the expected output value with accuracy as specified in
the Electrical Characteristics. Figure 26 illustrates this effect using the INA195 and INA198 devices (Gain = 100).
2.0
1.8
1.6
VOUT (V)
1.4
1.2
Actual
1.0
0.8
Ideal
0.6
0.4
0.2
0
0
2
4
6
8
10
12
14
16
18
20
VSENSE (mV)
Figure 26. Example for Low VSENSE Cases 1 and 3 (INA195, INA198: Gain = 100)
8.4.2.4 Low VSENSE Case 2: VSENSE < 20 mV, 0 V ≤ VCM ≤ VS
This region of operation is the least accurate for the INA193−INA198 family of devices. To achieve the wide input
common-mode voltage range, these devices use two op amp front ends in parallel. One op amp front end
operates in the positive input common-mode voltage range, and the other in the negative input region. For this
case, neither of these two internal amplifiers dominates and overall loop gain is very low. Within this region, VOUT
approaches voltages close to linear operation levels for Normal Case 2. This deviation from linear operation
becomes greatest the closer VSENSE approaches 0 V. Within this region, as VSENSE approaches 20 mV, device
operation is closer to that described by Normal Case 2. Figure 27 illustrates this behavior for the INA195 device.
The VOUT maximum peak for this case is tested by maintaining a constant VS, setting VSENSE = 0 mV and
sweeping VCM from 0 V to VS. The exact VCM at which VOUT peaks during this test varies from part to part, but the
VOUT maximum peak is tested to be less than the specified VOUT Tested Limit.
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Device Functional Modes (continued)
2.4
INA195, INA198 VOUT Tested Limit
2.2
(1)
2.0
Ideal
1.8
VCM2
1.6
VOUT (V)
VCM1
1.4
VCM3
1.2
1.0
0.8
VOUT tested limit at
VSENSE = 0mV, 0 £ VCM1 £ VS.
VCM4
0.6
VCM2, VCM3, and VCM4 illustrate the variance
from part to part of the VCM that can cause
maximum VOUT with VSENSE < 20mV.
0.4
0.2
0
0
2
4
6
8
10
12
14
16
18
20
22
24
VSENSE (mV)
(1) INA193, INA196 VOUT Tested Limit = 0.4V. INA194, INA197 VOUT Tested Limit = 1V.
Figure 27. Example for Low VSENSE Case 2 (INA195, INA198: Gain = 100)
8.4.3 Shutdown
Because the INA193-INA198 devices consume a quiescent current less than 1 mA, they can be powered by
either the output of logic gates or by transistor switches to supply power. Use a totem-pole output buffer or gate
that can provide sufficient drive along with 0.1-μF bypass capacitor, preferably ceramic with good high-frequency
characteristics. This gate should have a supply voltage of 3 V or greater because the INA193-INA198 devices
require a minimum supply greater than 2.7 V. In addition to eliminating quiescent current, this gate also turns off
the 10-μA bias current present at each of the inputs. An example shutdown circuit is shown in Figure 28.
Negative
and
Positive
Common-Mode
Voltage
IL
RS
VIN+
-16V to +80V
VIN+
VIN-
R1
R2
V+
Load
V+ > 3V
A1
0.1mF
A2
OUT
INA193-INA198
RL
Figure 28. INA193-INA198 Example Shutdown Circuit
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Device Functional Modes (continued)
8.4.4 Transient Protection
The −16-V to +80-V common-mode range of the INA193-INA198 devices is ideal for withstanding automotive
fault conditions ranging from 12-V battery reversal up to 80-V transients, since no additional protective
components are needed up to those levels. In the event that the INA193-INA198 devices are exposed to
transients on the inputs in excess of its ratings, then external transient absorption with semiconductor transient
absorbers (zeners or Transzorbs) will be necessary. Use of MOVs or VDRs is not recommended except when
they are used in addition to a semiconductor transient absorber. Select the transient absorber such that it will
never allow the INA193-INA198 devices to be exposed to transients greater than +80 V (that is, allow for
transient absorber tolerance, as well as additional voltage due to transient absorber dynamic impedance).
Despite the use of internal zener-type ESD protection, the INA193-INA198 devices do not lend themselves to
using external resistors in series with the inputs because the internal gain resistors can vary up to ±30%. (If gain
accuracy is not important, then resistors can be added in series with the INA193-INA198 inputs with two equal
resistors on each input.)
8.4.5 Output Voltage Range
The output of the INA193-INA198 devices are accurate within the output voltage swing range set by the powersupply pin, V+. This is best illustrated when using the INA195 or INA198 devices (which are both versions using
a gain of 100), where a 100-mV full-scale input from the shunt resistor requires an output voltage swing of +10 V,
and a power-supply voltage sufficient to achieve +10 V on the output.
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The INA193-INA198 devices measure the voltage developed across a current-sensing resistor when current
passes through it. The ability to have shunt common-mode voltages from −16-V to +80-V drive and control the
output signal with Vs offers multiple configurations, as discussed throughout this section.
9.2 Typical Application
The device is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from −16 V to 80 V. Two devices can be configured for bidirectional
monitoring and is common in applications that include charging and discharging operations where the current
flow-through resistor can change directions.
RSHUNT
LOAD
VSUPPLY
+5V
VIN+
VIN-
+5V
VIN+
V+
VIN-
V+
+5V
INA152
40kW
OUT
INA193-INA198
40kW
OUT
VOUT
INA193-INA198
40kW
40kW
+2.5V
VREF
Figure 29. Bi-Directional Current Monitoring
9.2.1 Design Requirements
Vsupply is set to 12 V, Vref at 2.5 V and a 10-mΩ shunt. The accuracy of the current will typically be less than
0.5% for current greater than ±2 A. For current lower than ±2 A, the accuracy will vary; use the Device Functional
Modes section for accuracy considerations.
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Typical Application (continued)
9.2.2 Detailed Design Procedure
The ability to measure this current flowing in both directions is enabled by adding a unity gain amplifier with a
VREF, as shown in Figure 29. The output then responds by increasing above VREF for positive differential signals
(relative to the IN – pin) and responds by decreasing below VREF for negative differential signals. This reference
voltage applied to the REF pin can be set anywhere between 0 V to V+. For bidirectional applications, VREF is
typically set at mid- scale for equal signal range in both current directions. In some cases, however, VREF is set
at a voltage other than mid-scale when the bidirectional current and corresponding output signal do not need to
be symmetrical.
9.2.3 Application Curve
An example output response of a bidirectional configuration is shown in Figure 30. With the REF pin connected
to a reference voltage, 2.5 V in this case, the output voltage is biased upwards by this reference level. The
output rises above the reference voltage for positive differential input signals and falls below the reference
voltage for negative differential input signals.
10
I_in
VOUT
Current (I), Voltage (V)
7.5
5
2.5
0
-2.5
-5
-7.5
-10
0
2
4
6
8
10
12
14
16
18
20
Time (µs)
Figure 30. Output Voltage vs Shunt Input Current
10 Power Supply Recommendations
The input circuitry of the INA193-INA198 devices can accurately measure beyond its power-supply voltage, V+.
For example, the V+ power supply can be 5 V, whereas the load power-supply voltage is up to 80 V. The output
voltage range of the OUT terminal, however, is limited by the voltages on the power-supply pin.
11 Layout
11.1 Layout Guidelines
11.1.1 RFI and EMI
Attention to good layout practices is always recommended. Keep traces short and, when possible, use a printed
circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible.
Small ceramic capacitors placed directly across amplifier inputs can reduce RFI/EMI sensitivity. PCB layout
should locate the amplifier as far away as possible from RFI sources. Sources can include other components in
the same system as the amplifier itself, such as inductors (particularly switched inductors handling a lot of current
and at high frequencies). RFI can generally be identified as a variation in offset voltage or DC signal levels with
changes in the interfering RF signal. If the amplifier cannot be located away from sources of radiation, shielding
may be needed. Twisting wire input leads makes them more resistant to RF fields. The difference in input pin
location of the INA193-INA195 devices versus the INA196-INA198 devices may provide different EMI
performance.
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11.2 Layout Example
Via to Power or Ground Plane
Via to Internal Layer
Supply Bypass
Capacitor
Supply Voltage
Output Signal
OUT
V+
GND
IN+
IN-
Shunt Resistor
Figure 31. Recommended Layout
24
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12 Device and Documentation Support
12.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 1. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA193
Click here
Click here
Click here
Click here
Click here
INA194
Click here
Click here
Click here
Click here
Click here
INA195
Click here
Click here
Click here
Click here
Click here
INA196
Click here
Click here
Click here
Click here
Click here
INA197
Click here
Click here
Click here
Click here
Click here
INA198
Click here
Click here
Click here
Click here
Click here
12.2 Trademarks
All trademarks are the property of their respective owners.
12.3 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.4 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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25
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
HPA02230AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
INA193AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
INA193AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
INA193AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
INA193AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJJ
INA194AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
INA194AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
INA194AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
INA194AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJI
INA195AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
INA195AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
INA195AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
INA195AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJK
INA196AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
INA196AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
INA196AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
INA196AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJE
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
15-Apr-2017
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
INA197AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
INA197AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
INA197AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
INA197AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJH
INA198AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
INA198AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
INA198AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BJL
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2017
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Feb-2016
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
INA193AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.17
1.37
4.0
8.0
Q3
INA193AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA194AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA194AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA195AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA195AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA196AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA196AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA197AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA197AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA198AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
INA198AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Feb-2016
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA193AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA193AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA194AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA194AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA195AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA195AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA196AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA196AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA197AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA197AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA198AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA198AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
Pack Materials-Page 2
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