TI1 OPA1612-Q1 Soundplus high-performance, bipolar-input audio operational amplifier Datasheet

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OPA1612-Q1
Burr-Brown Audio
SLOS931A – NOVEMBER 2015 – REVISED NOVEMBER 2015
OPA1612-Q1 SoundPlus High-Performance, Bipolar-Input Audio Operational Amplifier
1 Features
3 Description
•
•
The OPA1612-Q1 device is a dual, SoundPlus™,
bipolar-input operational amplifierthat achieves
achieve very low 1.1-nV/√Hz noise density with an
ultralow distortion of 0.000015% at 1 kHz. The
OPA1612-Q1 device offers rail-to-rail output swing to
within 600 mV with a 2-kΩ load, which increases
headroom and maximizes dynamic range. These
devices also have a high output drive capability of
±30 mA.
1
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•
•
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•
Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 2
– Device CDM Classification Level C6
Superior Sound Quality
Ultralow Noise: 1.1 nV/√Hz at 1 kHz
Ultralow Distortion:
0.000015% at 1 kHz
High Slew Rate: 27 V/μs
Wide Bandwidth: 40 MHz (G = +1)
High Open-Loop Gain: 130 dB
Unity Gain Stable
Low Quiescent Current:
3.6 mA per Channel
Rail-to-Rail Output
Wide Supply Range: ±2.25 V to ±18 V
These devices operate over a very wide supply range
of ±2.25 V to ±18 V, on only 3.6 mA of supply current
per channel. The OPA1612-Q1 op amp is unity-gain
stable and provide excellent dynamic behavior over a
wide range of load conditions.
The dual version features completely independent
circuitry for lowest crosstalk and freedom from
interactions between channels, even when overdriven
or overloaded.
The OPA1612-Q1 device is available in a SOIC-8
package. The device is specified from –40°C to
+125°C.
Device Information(1)
2 Applications
•
•
•
•
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PART NUMBER
OPA1612-Q1
Professional Audio Equipment
Microphone Preamplifiers
Analog and Digital Mixing Consoles
Broadcast Studio Equipment
Audio Test And Measurement
High-End A/V Receivers
THD+N Ratio vs Output Amplitude
Total Harmonic Distortion + Noise (%)
–100
0.001
0.0001
0.00001
0.000001
0.01
V–
1-kHz Signal
BW = 80 kHz
RSOURCE = 0 Ω
–120
G = 1, RL = 600 Ω
G = 1, RL = 2 kΩ
G = –1, RL = 600 Ω
G = –1, RL = 2 kΩ
G = 10, RL = 600 Ω
G = 10, RL = 2 kΩ
0.1
–140
–160
1
10
Total Harmonic Distortion + Noise (dB)
OUT
IN+
–80
0.01
V+
IN–
BODY SIZE (NOM)
4.90 mm × 3.91 mm
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Functional Block Diagram
Pre-Output
Driver
PACKAGE
SOIC (8)
20
Output Amplitude (VRMS)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
OPA1612-Q1
SLOS931A – NOVEMBER 2015 – REVISED NOVEMBER 2015
www.ti.com
Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
6.1
6.2
6.3
6.4
6.5
6.6
7
8
1
1
1
2
3
4
Absolute Maximum Ratings ...................................... 4
ESD Ratings.............................................................. 4
Recommended Operating Conditions....................... 4
Thermal Information .................................................. 4
Electrical Characteristics: VS = ±2.25 V to ±18 V .... 5
Typical Characteristics .............................................. 7
Parameter Measurement Information ................ 11
Detailed Description ............................................ 14
8.1 Overview ................................................................. 14
8.2 Functional Block Diagram ....................................... 14
8.3 Feature Description................................................. 14
8.4 Device Functional Modes........................................ 17
9
Application and Implementation ........................ 18
9.1 Application Information............................................ 18
9.2 Typical Application .................................................. 18
10 Power-Supply Recommendations ..................... 22
11 Layout................................................................... 22
11.1 Layout Guidelines ................................................. 22
11.2 Layout Example .................................................... 23
12 Device and Documentation Support ................. 24
12.1
12.2
12.3
12.4
12.5
Documentation Support ........................................
Community Resource............................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
24
24
24
24
24
13 Mechanical, Packaging, and Orderable
Information ........................................................... 24
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (November 2015) to Revision A
•
2
Page
Changed the device status from Product Preview to Production Data ................................................................................. 1
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5 Pin Configuration and Functions
D Package
8-Pin SOIC
Top View
OUT A
1
–IN A
2
+IN A
3
V–
4
A
B
8
V+
7
OUT B
6
–IN B
5
+IN B
Pin Functions
PIN
I/O
DESCRIPTION
NO.
NAME
1
OUT A
O
Output, channel A
2
–IN A
I
Inverting input, channel A
3
+IN A
I
Noninverting input, channel A
4
V–
—
5
+IN B
I
Inverting input, channel B
6
–IN B
I
Noninverting input, channel B
7
OUT B
O
Output, channel B
8
V+
—
Positive (highest) power supply
Negative (lowest) power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
VS (2)
Supply voltage
Input voltage
(V–) – 0.5
TA
Operating temperature
TJ
Junction temperature
Tstg
Storage temperature
(1)
(2)
UNIT
40
V
(V+) + 0.5
V
±10
mA
125
°C
200
°C
150
°C
Input current (all pins except power-supply pins)
Output short-circuit (2)
MAX
Continuous
–55
–65
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Short-circuit to VS / 2 (ground in symmetrical dual supply setups), one amplifier per package.
6.2 ESD Ratings
VALUE
V(ESD)
(1)
Human-body model (HBM), per AEC Q100-002
Electrostatic discharge
(1)
±3000
Charged-device model (CDM), per AEC Q100-011
UNIT
V
±1000
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
Supply voltage (V+ – V–)
Specified temperature
NOM
MAX
UNIT
4.5 (±2.25)
36 (±18)
V
–40
85
°C
6.4 Thermal Information
OPA1612-Q1
THERMAL METRIC (1)
D (SOIC)
UNIT
8 PINS
RθJA
Junction-to-ambient thermal resistance
111.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
26.5
°C/W
RθJB
Junction-to-board thermal resistance
0.8
°C/W
ψJT
Junction-to-top characterization parameter
20.9
°C/W
ψJB
Junction-to-board characterization parameter
1.6
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
—
°C/W
(1)
4
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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6.5
SLOS931A – NOVEMBER 2015 – REVISED NOVEMBER 2015
Electrical Characteristics: VS = ±2.25 V to ±18 V
At TA = 25°C and RL = 2 kΩ, unless otherwise noted. VCM = VOUT = midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
AUDIO PERFORMANCE
THD+N
IMD
Total harmonic distortion + noise
Intermodulation distortion
0.000015%
G = +1, f = 1 kHz, VO = 3 VRMS
–136
SMPTE/DIN two-tone, 4:1 (60 Hz and 7 kHz),
G = +1, VO = 3 VRMS
0.000015%
DIM 30 (3-kHz square wave and 15-kHz sine
wave), G = +1, VO = 3 VRMS
0.000012%
CCIF twin-tone (19 kHz and 20 kHz), G = +1,
VO = 3 VRMS
0.000008%
dB
–136
dB
–138
dB
–142
dB
FREQUENCY RESPONSE
G = 100
80
MHz
G=1
40
MHz
Slew rate
G = –1
27
V/μs
Full-power bandwidth (1)
VO = 1 VPP
4
MHz
Overload recovery time
G = –10
500
ns
Channel separation (dual)
f = 1 kHz
–130
dB
Input voltage noise
f = 20 Hz to 20 kHz
GBW
Gain-bandwidth product
SR
NOISE
Input voltage noise density (2)
en
In
Input current noise density
μVPP
1.2
f = 10 Hz
2
nV/√Hz
f = 100 Hz
1.5
f = 1 kHz
1.1
nV/√Hz
f = 10 Hz
3
pA/√Hz
f = 1 kHz
1.7
pA/√Hz
1.5
nV/√Hz
OFFSET VOLTAGE
μV
VOS
Input offset voltage
VS = ±15 V
±100
±500
dVOS/dT
VOS over temperature (2)
TA = –40°C to +125°C
1
4
μV/°C
PSRR
Power-supply rejection ratio
VS = ±2.25 V to ±18 V
0.1
1
μV/V
VCM = 0 V
±60
±250
nA
VCM = 0 V, DRG package only
±60
±300
nA
350
nA
±25
±175
nA
INPUT BIAS CURRENT
IB
Input bias current
IB over temperature
IOS
(2)
Input offset current
TA = –40°C to +125°C
VCM = 0 V
INPUT VOLTAGE RANGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
(V–) + 2
(V–) + 2 V ≤ VCM ≤ (V+) – 2 V
110
(V+) – 2
V
120
dB
INPUT IMPEDANCE
(1)
(2)
Differential
20k || 8
Ω || pF
Common-mode
109 || 2
Ω || pF
Full-power bandwidth = SR / (2π × VP), where SR = slew rate.
Specified by design and characterization.
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Electrical Characteristics: VS = ±2.25 V to ±18 V (continued)
At TA = 25°C and RL = 2 kΩ, unless otherwise noted. VCM = VOUT = midsupply, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(V–) + 0.2 V ≤ VO ≤ (V+) – 0.2 V, RL = 10 kΩ
114
130
dB
(V–) + 0.6 V ≤ VO ≤ (V+) – 0.6 V, RL = 2 kΩ
110
114
dB
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
OUTPUT
RL = 10 kΩ, AOL ≥ 114 dB
(V–) + 0.2
(V+) – 0.2
RL = 2 kΩ, AOL ≥ 110 dB
(V–) + 0.6
(V+) – 0.6
V
VOUT
Voltage output
IOUT
Output current
See Figure 27
mA
ZO
Open-loop output impedance
See Figure 28
Ω
ISC
Short-circuit current
CLOAD
Capacitive load drive
Source, VS = ±18 V
Sink, VS = ±18 V
V
55
mA
–62
mA
See Typical Characteristics
pF
POWER SUPPLY
VS
Specified voltage
IQ
Quiescent current (per channel)
IOUT = 0 A
±2.25
IQ over Temperature (2)
TA = –40°C to +125°C
3.6
±18
V
4.5
mA
5.5
mA
TEMPERATURE RANGE
6
Specified range
–40
125
°C
Operating range
–55
125
°C
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6.6 Typical Characteristics
At TA = 25°, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
Current Noise Density
Voltage Noise Density
20 nV/div
Current Noise Density (pA/ √Hz)
Voltage Noise Density (nV/ √Hz)
100
10
1
0.1
1
10
100
1k
10k
100k
Time (1 s/div)
Frequency (Hz)
Figure 2. 0.1-Hz to 10-Hz Noise
30
10k
Total Output Voltage Noise
Resistor Noise
VS = ±15 V
VS = ±5 V
25
Output Voltage (VPP)
Voltage Noise Spectral Density, EO (nV/ √Hz)
Figure 1. Input Voltage Noise Density and Input Current
Noise Density vs Frequency
1k
100
10
VS = ±2.25 V
20
Maximum output
voltage range
without slew-rate
induced distortion
15
10
5
1
0
100
1k
10k
100k
1M
10k
100k
Source Resistance, RS (Ω)
EO2 = en2 + (in × RS)2 + 4kRTS
Gain
Phase
120
Figure 4. Maximum Output Voltage vs Frequency
180
25
160
20
G = 10
G = –1
140
15
G=1
Phase (degrees)
10
80
120
60
100
40
80
20
60
0
40
-15
-20
20
-20
-40
1k
10k
100k
1M
10M
0
100M
Gain (dB)
Gain (dB)
100
100
10M
See Figure 29
Figure 3. Voltage Noise vs Source Resistance
140
1M
Frequency (Hz)
5
0
-5
-10
-25
100k
1M
10M
100M
Frequency (Hz)
Frequency (Hz)
Figure 5. Gain and Phase vs Frequency
Figure 6. Closed-Loop Gain vs Frequency
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Typical Characteristics (continued)
At TA = 25°, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
0.00001
0.01
Total Harmonic Distortion + Noise (%)
Total Harmonic Distortion + Noise (%)
-120
G = –1, RL = 2 kΩ
G = 10, RL = 600 Ω
G = 10, RL = 2 kΩ
RSOURCE = 300 Ω
100
1k
RSOURCE = 600 Ω
0.001
-120
-140
0.00001
10k 20k
20
100
1k
Frequency (Hz)
Frequency (Hz)
VOUT = 3VRMS
BW = 80 KHz
VOUT = 3VRMS
Figure 7. THD+N Ratio vs Frequency
-120
0.0001
10
100
1k
0.01
Total Harmonic Distortion + Noise (%)
Total Harmonic Distortion + Noise (%)
G = –1, RL = 2 kΩ
G = 11, RL = 600 Ω
G = 11, RL = 2 kΩ
-140
100k
0.00001
10k
RSOURCE = 600 Ω
0.001
-120
10
100
–160
20
Intermodulation Distortion (%)
Total Harmonic Distortion + Noise (%)
-80
0.01
SMPTE/DIN, Two-Tone, 4:1 (60 Hz and 7 kHz)
DIM30, (3-kHz square wave and 15-kHz
sine wave)
CCIF, Twin-Tone, (19 kHz and 20 kHz)
0.001
BW = 80 KHz
-120
0.00001
-140
-160
0.000001
0.1
1
10
20
Output Amplitude (VRMS)
RSOURCE = 0 Ω
Figure 11. THD+N Ratio vs Output Amplitude
8
-100
0.0001
Output Amplitude (VRMS)
1-kHz Signal
See Figure 30
Intermodulation Distortion (dB)
–140
Total Harmonic Distortion + Noise (dB)
–120
G = 1, RL = 600 Ω
G = 1, RL = 2 kΩ
G = –1, RL = 600 Ω
G = –1, RL = 2 kΩ
G = 10, RL = 600 Ω
G = 10, RL = 2 kΩ
10
BW > 500 KHz
Figure 10. THD+N Ratio vs Frequency
–100
1
-140
100k
10k
Frequency (Hz)
–80
0.1
1k
VOUT = 3VRMS
0.001
0.000001
0.01
-100
0.0001
0.00001
BW > 500 KHz
0.01
0.00001
-80
RSOURCE = 300 Ω
Figure 9. THD+N Ratio vs Frequency
0.0001
See Figure 30
RSOURCE = 0 Ω
RSOURCE = 150 Ω
Frequency (Hz)
VOUT = 3VRMS
BW = 80 KHz
20k
Total Harmonic Distortion + Noise (dB)
G = 1, RL = 600 Ω
G = 1, RL = 2 kΩ
G = –1, RL = 600 Ω
10k
Figure 8. THD+N Ratio vs Frequency
-100
Total Harmonic Distortion + Noise (dB)
0.001
-100
0.0001
-140
10
-80
RSOURCE = 0 Ω
RSOURCE = 150 Ω
Total Harmonic Distortion + Noise (dB)
G = 1, RL = 600 Ω
G = 1, RL = 2 kΩ
G = –1, RL = 600 Ω
Total Harmonic Distortion + Noise (dB)
0.0001
G=1
Figure 12. Intermodulation Distortion vs Output Amplitude
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Typical Characteristics (continued)
At TA = 25°, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
Channel Separation (dB)
-100
RL = 5 kΩ
-110
-120
-130
-140
-150
-160
-170
160
Power-Supply Rejection Ratio (dB)
RL = 600 Ω
RL = 2 kΩ
-90
Common-Mode Rejection Ratio (dB)
-80
–PSRR
+PSRR
140
CMRR
120
100
80
60
40
20
-180
0
100
10
1k
10k
100k
1
10
Frequency (Hz)
VOUT = 3.5 VRMS
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
VS = ±15 V
G=1
Figure 14. CMRR and PSRR vs Frequency
(Referred to Input)
20 mV/div
20 mV/div
Figure 13. Channel Separation vs Frequency
Time (0.1 µs/div)
Time (0.1 µs/div)
G=1
CL = 50 pF
G = –1
See Figure 31
CL = 50 pF
See Figure 32
Figure 16. Small-Signal Step Response (100 mV)
Figure 15. Small-Signal Step Response (100 mV)
RF = 0 Ω
2 V/div
2 V/div
RF = 75 Ω
Time (0.5 µs/div)
Time (0.5 µs/div)
G=1
CL = 50 pF
See the Input Protection section
RL = 2 kΩ
Figure 17. Large-Signal Step Response
G = –1
CL = 50 pF
RL = 2 kΩ
Figure 18. Large-Signal Step Response
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Typical Characteristics (continued)
At TA = 25°, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
50
40
RS = 0 Ω
RS = 25 Ω
20
RS = 50 Ω
Overshoot (%)
Overshoot (%)
25
RS = 0 Ω
RS = 25 Ω
30
20
10
RS = 50 Ω
15
10
5
0
0
0
100
200
300
400
500
600
0
100 200 300 400 500 600 700 800 900 1000
Capacitive Load (pF)
G=1
Capacitive Load (pF)
See Figure 33
G = –1
Figure 19. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
1.0
120
–IB
+IB
100
0.6
IB and IOS Current (nA)
Open-Loop Gain (mV/V)
Figure 20. Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
10 kΩ
2 kΩ
0.8
0.4
0.2
0
-0.2
-0.4
-0.6
See Figure 34
IOS
80
60
40
20
-0.8
-1.0
0
-40
-15
10
35
60
85
-40
-15
Temperature (°C)
Figure 21. Open-Loop Gain vs Temperature
35
50
85
70
–IB
+IB
60
IOS
Figure 22. IB and IOS vs Temperature
5.0
4.5
Quiescent Current (mA)
IB and IOS (nA)
80
50
40
30
20
10
0
4.0
3.5
3.0
2.5
Common-Mode Range
-10
10
Temperature (°C)
2.0
-20
-18
-12
-6
0
6
12
18
-40
-15
10
35
60
85
Temperature (°C)
Common-Mode Voltage (V)
VS = ±18 V
Figure 23. IB and IOS vs Common-Mode Voltage
10
Figure 24. Quiescent Current vs Temperature
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Typical Characteristics (continued)
4.0
75
3.9
70
Short-Circuit Current (mA)
Quiescent Current (mA)
At TA = 25°, VS = ±15 V, and RL = 2 kΩ, unless otherwise noted.
3.8
3.7
3.6
3.5
3.4
3.3
3,2
65
60
55
50
45
40
35
Specified Supply-Voltage Range
3.1
–ISC
+ISC
30
3.0
0
4
8
12
16
20
24
28
32
-50
36
-25
0
Supply Voltage (V)
Figure 25. Quiescent Current vs Supply Voltage
50
75
100
125
Figure 26. Short-Circuit Current vs Temperature
10k
Open-Loop Output Impedance (Ω)
15
14
Output Voltage (V)
25
Temperature (°C)
13
–40°C
25°C
85°C
-13
-14
1k
100
10
1
0.1
-15
0
10
20
30
40
50
10
Output Current (mA)
VS = ±15 V
100
1k
10k
100k
1M
10M
100M
Frequency (Hz)
Both channels driven simultaneously
Figure 27. Output Voltage vs Output Current
Figure 28. Open-Loop Output Impedance vs Frequency
7 Parameter Measurement Information
EO
RS
Figure 29. Circuit for Figure 3—Voltage Noise vs Source Resistance
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Parameter Measurement Information (continued)
15 V
RSOURCE
Device
–15 V
RL
Figure 30. Circuit for Figure 8 and Figure 10—THD+N Ratio vs Frequency
15 V
Device
RL
–15 V
CL
Figure 31. Circuit for Figure 15—Small-Signal Step Response (100 mV)
CF = 5.6 pF
RI = 2 kΩ
RF = 2 kΩ
15 V
Device
CL
–15 V
Figure 32. Circuit for Figure 16—Small-Signal Step Response (100 mV)
15 V
RS
Device
–15 V
RL
CL
Figure 33. Circuit for Figure 19—Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
12
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Parameter Measurement Information (continued)
CF = 5.6 pF
RI = 2 kΩ
RF = 2 kΩ
15 V
RS
Device
CL
–15 V
Figure 34. Circuit for Figure 20—Small-Signal Overshoot vs Capacitive Load
(100-mV Output Step)
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8 Detailed Description
8.1 Overview
The OPA1612-Q1 bipolar-input operational amplifierachieves very low 1.1-nV/√Hz noise density with an ultralow
distortion of 0.000015% at 1 kHz. The rail-to-rail output swing, within 600 mV with a 2-kΩ load, increases
headroom and maximizes dynamic range. These devices also have a high output drive capability of ±40 mA. The
wide supply range of ±2.25 V to ±18 V, on only 3.6 mA of supply current per channel, makes them applicable to
both 5-V systems and 36-V audio applications. The OPA1612-Q1 op amp is unity-gain stable and provide
excellent dynamic behavior over a wide range of load conditions.
8.2 Functional Block Diagram
V+
Pre-Output Driver
OUT
IN–
IN+
V–
8.3 Feature Description
8.3.1 Power Dissipation
The OPA1612-Q1 op amp is capable of driving 2-kΩ loads with a power-supply voltage up to ±18 V. Internal
power dissipation increases when operating at high supply voltages. Copper leadframe construction used in the
OPA1612-Q1 op amp improves heat dissipation compared to conventional materials. Circuit board layout can
also help minimize junction temperature rise. Wide copper traces help dissipate the heat by acting as an
additional heat sink. Temperature rise can be further minimized by soldering the devices to the circuit board
rather than using a socket.
8.3.2 Electrical Overstress
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress.
These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the output
pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
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Feature Description (continued)
Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is
helpful. Figure 35 shows the ESD circuits contained in the OPA1612-Q1 device (indicated by the dashed line
area). The ESD protection circuitry involves several current-steering diodes connected from the input and output
pins and routed back to the internal power-supply lines, where they meet at an absorption device internal to the
operational amplifier. This protection circuitry is intended to remain inactive during normal circuit operation.
RF
+VS
+V
RI
ESD CurrentSteering Diodes
–IN
+IN
Op-Amp
Core
Edge-Triggered ESD
Absorption Circuit
ID
VIN(1)
OUT
RL
–V
–VS
(1) VIN = +VS + 500 mV.
Figure 35. Equivalent Internal ESD Circuitry and its Relation to a Typical Circuit Application
An ESD event produces a short duration, high-voltage pulse that is transformed into a short duration, highcurrent pulse when discharged through a semiconductor device. The ESD protection circuits are designed to
provide a current path around the operational amplifier core to prevent damage to the core. The energy absorbed
by the protection circuitry is then dissipated as heat.
When an ESD voltage develops across two or more of the amplifier device pins, current flows through one or
more of the steering diodes. Depending on the path that the current takes, the absorption device may activate.
The absorption device internal to the OPA1612-Q1 device triggers when a fast ESD voltage pulse is impressed
across the supply pins. Once triggered, the absorption device quickly activates and clamps the ESD pulse to a
safe voltage level.
When the operational amplifier connects into a circuit such as the one Figure 35 shows, the ESD protection
components are intended to remain inactive and not become involved in the application circuit operation.
However, circumstances may arise where an applied voltage exceeds the operating voltage range of a given pin.
If this condition occurs, some of the internal ESD protection circuits may possibly be biased on, and conduct
current. Any such current flow occurs through steering diode paths and rarely involves the absorption device.
Figure 35 shows a specific example where the input voltage, VIN, exceeds the positive supply voltage (+VS) by
500 mV or more. Much of what happens in the circuit depends on the supply characteristics. If +VS can sink the
current, one of the upper input steering diodes conducts and directs current to +VS. Excessively high current
levels can flow with increasingly higher VIN. As a result, the datasheet specifications recommend that applications
limit the input current to 10 mA.
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Feature Description (continued)
If the supply is not capable of sinking the current, VIN may begin sourcing current to the operational amplifier, and
then take over as the source of positive supply voltage. The danger in this case is that the voltage can rise to
levels that exceed the operational amplifier absolute maximum ratings. In extreme but rare cases, the absorption
device triggers on while +VS and –VS are applied. If this event happens, a direct current path is established
between the +VS and –VS supplies. The power dissipation of the absorption device is quickly exceeded, and the
extreme internal heating destroys the operational amplifier.
Another common question involves what happens to the amplifier if an input signal is applied to the input while
the power supplies +VS or –VS are at 0 V. Again, the result depends on the supply characteristic while at 0 V, or
at a level below the input signal amplitude. If the supplies appear as high impedance, then the operational
amplifier supply current may be supplied by the input source via the current steering diodes. This state is not a
normal bias condition; the amplifier most likely does not operate normally. If the supplies are low impedance,
then the current through the steering diodes can become quite high. The current level depends on the ability of
the input source to deliver current, and any resistance in the input path.
If there is an uncertainty about the ability of the supply to absorb this current, external zener diodes may be
added to the supply pins; see Figure 35. The zener voltage must be selected such that the diode does not turn
on during normal operation. However, the zener diode voltage must be low enough so that the zener diode
conducts if the supply pin begins to rise above the safe operating supply voltage level.
8.3.3 Operating Voltage
The OPA1612-Q1 op amp operates from ±2.25-V to ±18-V supplies while maintaining excellent performance.
The OPA1612-Q1 device can operate with as little as +4.5 V between the supplies and with up to +36 V between
the supplies. However, some applications do not require equal positive and negative output voltage swing. With
the OPA1612-Q1 device, power-supply voltages do not need to be equal. For example, the positive supply could
be set to +25 V with the negative supply at –5 V.
In all cases, the common-mode voltage must be maintained within the specified range. In addition, key
parameters are assured over the specified temperature range of TA = –40°C to +85°C. Parameters that vary with
operating voltage or temperature are shown in the Typical Characteristics section.
8.3.4 Input Protection
The input terminals of the OPA1612-Q1 device is protected from excessive differential voltage with back-to-back
diodes, as Figure 36 shows. In most circuit applications, the input protection circuitry has no consequence.
However, in low-gain or G = +1 circuits, fast ramping input signals can forward bias these diodes because the
output of the amplifier cannot respond rapidly enough to the input ramp. This effect is illustrated in Figure 17 of
the Typical Characteristics section. If the input signal is fast enough to create this forward bias condition, the
input signal current must be limited to 10 mA or less. If the input signal current is not inherently limited, an input
series resistor (RI) or a feedback resistor (RF) can be used to limit the signal input current. This input series
resistor degrades the low-noise performance of the OPA1612-Q1 device and is examined in the Noise
Performance section. Figure 36 shows an example configuration when both current-limiting input and feedback
resistors are used.
RF
–
Device
RI
Input
Output
+
Figure 36. Pulsed Operation
16
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8.4 Device Functional Modes
The OPA1612-Q1 device has a single functional mode. The device is powered on as long as the power supply
voltage is between 4.5 V (±2.25 V) and 36 V (±18 V).
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The OPA1612-Q1 device is unity-gain stable, precision op amp with very low noise; these devices are also free
from output phase reversal. Applications with noisy or high-impedance power supplies require decoupling
capacitors close to the device power-supply pins. In most cases, 0.1-μF capacitors are adequate.
9.2 Typical Application
Figure 37 shows how to use the OPA1612-Q1 device as an amplifier for professional audio headphones. The
circuit shows the left side stereo channel. An identical circuit is used to drive the right side stereo channel.
820 Ω
2200 pF
0.1 µF
+VA
(15 V)
330 Ω
IOUTL+
Device
2700 pF
–VA
(–15 V)
680 Ω
620 Ω
Audio DAC
with Differential
Current
Outputs
0.1 µF
+VA
(15 V)
0.1 µF
100 Ω
820 Ω
Device
8200 pF
L Ch
Output
2200 pF
–VA
(–15 V)
0.1 µF
0.1 µF
+VA
(15 V)
680 Ω
620 Ω
IOUTL–
Device
330 Ω
2700 pF
–VA
(–15 V)
0.1 µF
Figure 37. Audio DAC Post Filter (I/V Converter and Low-Pass Filter)
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Typical Application (continued)
9.2.1 Design Requirements
Use Equation 1 to calculate the total circuit noise.
EO2 = en2 + (inRS)2 + 4kTRS
where
•
•
•
•
•
en = voltage noise
In = current noise
RS = source impedance
k = Boltzmann’s constant = 1.38 × 10–23 J/K
T = temperature in degrees Kelvin (K)
(1)
9.2.2 Detailed Design Procedure
9.2.2.1 Noise Performance
Figure 40 shows the total circuit noise for varying source impedances with the op amp in a unity-gain
configuration (no feedback resistor network, and therefore no additional noise contributions).
The OPA1612-Q1 device (GBW = 40 MHz, G = +1) is shown with total circuit noise calculated. The op amp
contributes both a voltage noise component and a current noise component. The voltage noise is commonly
modeled as a time-varying component of the offset voltage. The current noise is modeled as the time-varying
component of the input bias current and reacts with the source resistance to create a voltage component of
noise. Therefore, the lowest noise op amp for a given application depends on the source impedance. For low
source impedance, current noise is negligible, and voltage noise generally dominates. The low voltage noise of
the OPA1612-Q1 device makes it a good choice for use in applications where the source impedance is less than
1 kΩ.
9.2.2.1.1 Basic Noise Calculations
Design of low-noise op amp circuits requires careful consideration of a variety of possible noise contributors:
noise from the signal source, noise generated in the op amp, and noise from the feedback network resistors. The
total noise of the circuit is the root-sum-square combination of all noise components.
The resistive portion of the source impedance produces thermal noise proportional to the square root of the
resistance. Figure 40 plots this function. The source impedance is usually fixed; consequently, select the op amp
and the feedback resistors to minimize the respective contributions to the total noise.
Figure 38 shows both inverting and noninverting op amp circuit configurations with gain. In circuit configurations
with gain, the feedback network resistors also contribute noise.
The current noise of the op amp reacts with the feedback resistors to create additional noise components. The
feedback resistor values can generally be chosen to make these noise sources negligible. The equations for total
noise are shown for both configurations.
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Typical Application (continued)
Noise in Noninverting Gain Configuration
Noise at the output:
R2
2
é R ù
R ù
2
2é
EO2 = ê1 + 2 ú en2 + e12 + e22 + (in R2 ) + eS2 + (in RS ) ê1 + 2 ú
ë R1 û
ë R1 û
R1
EO
2
where
é R ù
· eS = 4kTRS ´ ê1 + 2 ú = thermal noise of RS
ë R1 û
RS
éR ù
· e1 = 4kTR1 ´ ê 2 ú = thermal noise of R1
ë R1 û
VS
· e2 = 4kTR2 = thermal noise of R2
Noise in Inverting Gain Configuration
Noise at the output:
R2
2
EO
R1
EO
RS
2
é
R2 ù
2
2
2
2
2
= ê1 +
ú en + e1 + e2 + (in R2 ) + eS
ë R1 + RS û
where
é R2 ù
· eS = 4kTRS ´ ê
ú = thermal noise of RS
ë R1 + RS û
VS
é R2 ù
· e1 = 4kTR1 ´ ê
ú = thermal noise of R1
ë R1 + RS û
· e2 = 4kTR2 = thermal noise of R2
At 1 kHz, en = 1.1 nV/√Hz and in = 1.7 pA/√Hz.
Figure 38. Noise Calculation in Gain Configurations
9.2.2.2 Total Harmonic Distortion Measurements
The OPA1612-Q1 op amp has excellent distortion characteristics. THD + noise is below 0.00008% (G = +1, VO =
3 VRMS, BW = 80 kHz) throughout the audio frequency range, 20 Hz to 20 kHz, with a 2-kΩ load (see Figure 7 for
characteristic performance).
The distortion produced by OPA1612-Q1 op amp is below the measurement limit of many commercially available
distortion analyzers. However, a special test circuit (such as Figure 39 shows) can be used to extend the
measurement capabilities.
Op amp distortion can be considered an internal error source that can be referred to the input. Figure 39 shows a
circuit that causes the op amp distortion to be 101 times (or approximately 40 dB) greater than that normally
produced by the op amp. The addition of R3 to the otherwise standard noninverting amplifier configuration alters
the feedback factor or noise gain of the circuit. The closed-loop gain is unchanged, but the feedback available for
error correction is reduced by a factor of 101, thus extending the resolution by 101. Note that the input signal and
load applied to the op amp are the same as with conventional feedback without R3. Keep the value of R3 small to
minimize its effect on the distortion measurements.
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Typical Application (continued)
Validity of this technique can be verified by duplicating measurements at high gain and/or high frequency where
the distortion is within the measurement capability of the test equipment. Measurements for this data sheet were
made with an audio precision system two distortion and noise analyzer, which greatly simplifies such repetitive
measurements. The measurement technique can, however, be performed with manual distortion measurement
instruments.
R1
Signal Gain = 1 +
R2
R3
R2
R1
Distortion Gain = 1 +
R2
R1 || R3
Device
VO = 3 VRMS
Generator
Output
Analyzer
Input
Audio Precision
System Two(1)
with PC Controller
Load
(1) For measurement bandwidth, see Figure 7 through Figure 12.
SIGNAL
GAIN
DISTORTION
GAIN
R1
R2
R3
1
101
∞
1 kΩ
10 Ω
–1
101
4.99 kΩ
4.99 kΩ
49.9 kΩ
10
110
549 Ω
4.99 kΩ
49.9 kΩ
Figure 39. Distortion Test Circuit
9.2.2.3 Capacitive Loads
The dynamic characteristics of the OPA1612-Q1 device is optimized for commonly encountered gains, loads,
and operating conditions. The combination of low closed-loop gain and high capacitive loads decreases the
phase margin of the amplifier and can lead to gain peaking or oscillations. As a result, heavier capacitive loads
must be isolated from the output. The simplest way to achieve this isolation is to add a small resistor (RS equal to
50 Ω, for example) in series with the output.
This small series resistor also prevents excess power dissipation if the output of the device becomes shorted.
Figure 19 and Figure 20 illustrate graphs of Small-Signal Overshoot vs Capacitive Load for several values of RS.
For details of analysis techniques and application circuits, refer to Applications Bulletin AB-028, Feedback Plots
Define Op Amp AC Performance (SBOA015).
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Typical Application (continued)
9.2.3 Application Curves
Voltage Noise Spectral Density, EO (nV/√Hz)
Equation 1 applies to Figure 40 and Figure 41.
10k
Total Output Voltage Noise
Resistor Noise
EO
1k
RS
100
10
1
100
1k
10k
100k
1M
Source Resistance, RS (Ω)
Figure 40. Noise Performance of the OPA1612-Q1
in Unity-Gain Buffer Configuration
Figure 41. Circuit for Figure 40
10 Power-Supply Recommendations
The OPA1612-Q1 device is specified for operation from 4.5 V to 36 V (±2.25 V to ±18 V); many specifications
apply from –40°C to +85°C. Parameters that can exhibit significant variance with regard to operating voltage or
temperature are presented in the Typical Characteristics section.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings table.
Place 0.1-μF bypass capacitors close to the power-supply pins to reduce errors coupling in from noisy or highimpedance power supplies. For more detailed information on bypass capacitor placement, refer to the Layout
section.
11 Layout
11.1 Layout Guidelines
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
• Noise can propagate into analog circuitry through the power pins of the circuit as a whole and the op amp
itself. Bypass capacitors are used to reduce the coupled noise by providing low-impedance power sources
local to the analog circuitry.
– Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable for singlesupply applications.
• Separate grounding for analog and digital portions of the circuitry is one of the simplest and most-effective
methods of noise suppression. One or more layers on multilayer PCBs are usually devoted to ground planes.
A ground plane helps distribute heat and reduces EMI noise pickup. Make sure to physically separate digital
and analog grounds while paying attention to the flow of the ground current. For more detailed information,
refer to the application report, Circuit Board Layout Techniques (SLOA089).
• In order to reduce parasitic coupling, run the input traces as far away from the supply or output traces as
possible. If these traces cannot be keep them separate, crossing the sensitive trace perpendicular as
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Layout Guidelines (continued)
•
•
•
opposed to in parallel with the noisy trace is the preferred method.
Place the external components as close to the device as possible. As shown in Figure 42, keeping RF and
RG close to the inverting input minimizes parasitic capacitance.
Keep the length of input traces as short as possible. Always remember that the input traces are the most
sensitive part of the circuit.
Consider a driven, low-impedance guard ring around the critical traces. A guard ring can significantly reduce
leakage currents from nearby traces that are at different potentials.
11.2 Layout Example
RIN
+
VIN
VOUT
RG
RF
(Schematic Representation)
Run the input traces
as far away from
the supply lines
as possible
Place components
close to device and to
each other to reduce
parasitic errors
VS+
RF
NC
NC
±IN
V+
+IN
OUT
V±
NC
RG
GND
VIN
GND
RIN
Only needed for
dual-supply
operation
GND
VS±
(or GND for single supply)
Use low-ESR, ceramic
bypass capacitor
VOUT
Ground (GND) plane on another layer
Figure 42. Operational Amplifier Board Layout for a Noninverting Configuration
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• Feedback Plots Define Op Amp AC Performance , SBOA015
• Circuit Board Layout Techniques, SLOA089
12.2 Community Resource
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
SoundPlus is a trademark of Texas Instruments, Inc.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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PACKAGING INFORMATION
Orderable Device
Status
(1)
OPA1612AQDRQ1
ACTIVE
Package Type Package Pins Package
Drawing
Qty
SOIC
D
8
2500
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
Op Temp (°C)
Device Marking
(4/5)
-40 to 125
1612Q1
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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OTHER QUALIFIED VERSIONS OF OPA1612-Q1 :
• Catalog: OPA1612
NOTE: Qualified Version Definitions:
• Catalog - TI's standard catalog product
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Nov-2015
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
OPA1612AQDRQ1
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
23-Nov-2015
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA1612AQDRQ1
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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