This product complies with the RoHS Directive (EU 2002/95/EC). DSA7504 Silicon PNP epitaxial planar type For low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package Code MiniP3-F2-B Package dimension clicks here.→ Packaging DSA7504×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO –30 V Collector-emitter voltage (Base open) VCEO –20 V Emitter-base voltage (Collector open) VEBO –7 V Collector current IC –4 A Peak collector current ICP –7 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Click! Pin Name 1. Base 2. Collector 3. Emitter Marking Symbol: 4F Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Absolute maximum rating without heat sink for PC is 0.5 W Electrical Characteristics Ta = 25°C±3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –30 V Collector-emitter voltage (Base open) VCEO IC = –1 mA, IB = 0 –20 V Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –7 V Collector-base cutoff current (Emitter open) ICBO VCB = –30 V, IE = 0 – 0.1 Emitter-base cutoff current (Collector open) IEBO VEB = –7 V, IC = 0 – 0.1 Forward current transfer ratio *1, 2 hFE VCE = –2 V, IC = –2 A VCE(sat) IC = –3 A, IB = – 0.1 A – 0.7 VCE = –6 V, IC = –50 mA 180 MHz VCB = –20 V, IE = 0, f = 1 MHz 30 pF Collector-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob 120 mA 315 –1.0 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Code Q R 0 Rank Q R No-rank hFE 120 to 205 180 to 315 120 to 315 Marking Symbol 4FQ 4FR 4F Product of no-rank is not classified and have no marking symbol for rank. Publication date: May 2012 Ver. BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). DSA7504 DSA7504_PC-Ta DSA7504_IC-VCE PC Ta IC VCE −4 −15.0 mA −3 −2 −3.0 mA −1 250 0 40 80 120 160 0 0 200 Ambient temperature Ta (°C) −2 −4 −8 −10 DSA7504_VCEsat-IC DSA7504_IC-VBE VCE(sat) IC IC VBE −10 −1 Ta = 85°C 25°C −10−1 −1 −10 VCE = −2 V −3.0 −2.0 Ta = 85°C 25°C −30°C −1.0 0 0 − 0.2 − 0.4 − 0.6 − 0.8 −1.0 DSA7504_fT-IC fT IC 400 VCE = −10 V Ta = 25°C 300 200 100 −10 −102 200 0 −10−2 −103 Collector current IC (mA) Ver. BED −1 −10−1 −10 Collector current IC (A) Cob VCB Base-emitter voltage VBE (V) Collector current IC (A) 0 −1 −30°C DSA7504_Cob-VCB −30°C −10−2 −10−2 25°C 400 −12 −4.0 IC / IB = 10 −10−1 Transition frequency fT (MHz) −6 Ta = 85°C 600 Collector-emitter voltage VCE (V) Collector current IC (A) Collector-emitter saturation voltage VCE(sat) (V) −9.0 mA Forward current transfer ratio hFE 500 VCE = −2 V IB = −21.0 mA Ta = 25°C Collector current IC (A) 750 800 −1.2 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector power dissipation PC (mW) Copper plate at the collector is more than 1.0 cm2 in area, 1.7 mm in thickness. 1 000 2 hFE IC −5 1 250 0 DSA7504_hFE-IC 80 IE = 0 f = 1 MHz Ta = 25°C 60 40 20 0 −1 −10 −100 Collector-base voltage VCB (V) Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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