MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC GENERAL DESCRIPTION The ML0XX18 is an external modulator driver for 10Gb/s optical communication systems. Output voltage swing, output voltage offset, and output voltage cross-point are adjustable by controls of current inputs. A D-FF and a selector are integrated on the chip to implement selectable re-timing/bypass function. Data and clock inputs have high sensitivity of 200mV differential amplitude. Both DC/AC-coupled connections are allowed for the data inputs. Clock input supports AC-coupled connection. The ML0XX18 is available in a 32-pin Small Lead-frame Package (SLP-type) or in a die form. FEATURES ·Operation for 10Gbps Optical Communication ·Adjustable Output Modulation Voltage: ·On-chip Input / Output 50Ω Termination Vo-pp= 1 – 3Vpp ·Built-in D-FF ·Adjustable Output Voltage Offset: (Retiming and Non-retiming Mode Selectable) Voh= -1.0 – 0V ·Output Voltage Swing: ·Adjustable Output Voltage Cross-Point: Vo-pp(Max.)=3 Vp-p min. @RL=50Ω CP= 30 - 75% ·The -5.2V Single Power Supply ·DC or AC Coupled Data Input < Keep safety first in your circuit designs! > with High Sensitivity of 200mV Differential (100mV per side). Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (ⅰ)placement of Substitutive, auxiliary circuits, (ⅱ)use of non-flammable material or (ⅲ)prevention against any malfunction or mishap. APPLICATION ·SONET OC-192 and SDH STM-64 Transmission systems ·10Gb/s Ethernet Modules ·10Gb/s Fibre Channel Modules RECOMMENDED OPERATING CONDITIONS — Min. -5.46 Ratings Typ. -5.2 Max. -4.94 RL=50Ω — 0 — V AC-coupled/side DC-coupled DC-coupled AC-coupled/side — Bias Non-Bias — — 0.1 -0.45 -1.0 0.1 0 0 — 0.25 0 0.25 -0.375 -0.625 0.25 — — Floating 0.35 — 1 -0.0 -0.55 1 6.0 6.0 — 0.5 85 V V V V mA mA mA mA ºC Symbol Parameter Test Conditions VEE VGNDO VGNDON VDATA VDATA(High) VDATA(Low) VCLK IM Supply Voltage Driver Output Termination Voltage (GNDO/GNDON) DATA Input Voltage Amplitude DATA Input Level High DATA Input Level Low CLK Input Voltage Amplitude Output Voltage Modulation Control Current IOFS ICRSADJ TC Output Voltage offset Control Current Cross-Point Control Current Operating Case Temperature MITSUBISHI ELECTRIC -1- Unit V ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC ABSOLUTE MAXIMUM RATINGS Ratings Symbol Parameter VEE Supply Voltage All Pins Input Voltage Output Voltage Output Current Output Voltage Modulation Control Current Output Voltage offset Control Current Cross-Point Control Current Junction Temperature Storage Temperature VDATA, VCLK VOUT IOUT IM IOFS ICRSADJ TJ TSTG Min. -7.0 VEE -6 -4 — — — — -40 -40 Max. 0.5 0.5 0.5 2.5 100 10 10 3 150 150 Unit V V V V mA mA mA mA ºC ºC ELECTRICAL CHARACTERISTICS ( Ta = 25±3ºC, VEE =-5.2V, fDATA =10.3Gb/s, PRBS 231-1, RL=50Ω) Symbol fDATA fCLK IEE VO-PP (Max.) VO-PP (Min.) VOH VOL VOFS CP tR tF Parameter Maximum Data Rate Clock Rate Power Supply Current Test Conditions NRZ IOFS=floating, IM=6mA, Retiming mode CP=50%, AC-coupled inputs Non retiming mode Min. — 1.0 — — Ratings Typ. 10.3 10.3 310 270 Max. — — TBD TBD Unit Gb/s GHz mA Output Voltage Swing(Max.) IOFS=floating, IM=6mA, CP=50% — 3.0 — Vp-p Output Voltage Swing(Min.) IOFS=floating, IM=2mA, CP=50% — 1.0 — Vp-p Output High Voltage Output Low Voltage Output Offset Voltage Cross-point Control Range Rise Time Fall Time IOFS=floating, IM=6mA, CP=50% JITPP Jitter P-P IOFS=floating, IM=6mA, CP=50%, PM S11 (Data) S11 (CLK) S22 Phase Margin Data Input Reflection Coefficient Clock Input Reflection Coefficient Output Reflection Coefficient — — -1.0 TBD — — — — 270 0 -3.2 — — 30 30 12 12 — — — 0 75 — — — — — V V V % ps ps ps ps degrees 50MHz to 10GHz - -10 - dB 1GHz to 10GHz - -10 - dB 50MHz to 10GHz, DOUT =ON - -10 - dB IOFS=floating, VOFS=0V IOFS=floating, IM=6mA, CP=50%, 20-80% IOFS=floating, IM=6mA, CP=50%, 20-80% Retiming mode Non retiming mode ORDERING INFORMATION Part Number ML0CP18 ML01618 Description Bare Die 32-pin SLP, 5mm x 5mm MITSUBISHI ELECTRIC -2- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC FUNCTIONAL DESCRIPTION The ML0XX18 is an external modulator driver integrating a D-FF and output waveform adjustment controls, such as output swing, offset voltage, and cross point. These functions of the ML0XX18 help customers to realize an excellent optical waveform on their system. Figure 1 shows the block diagram of the ML0XX18. IINBIAS 50Ω GND VEE IOFS ICRSADJ Offset Voltage Control 50Ω GNDO GNDON DATA DATAN D-FF SEL CLK Cross -Point Control Modulation Current Control CLKN 50Ω OUT OUTN Modulation 50Ω CSEL IM Figure 1. ML0XX18 Block Diagram DATA/CLOCK INPUT Both the data and clock inputs have on-chip 50Ω terminations. Thanks to the high gain input buffers, the sensitivities of data and clock inputs are as high as 200mV differential. For the data input interface, both DC/AC-coupled connections are allowed. In the case of DC couple, keep IINBIAS floating or connect to VEE in order to disable the internal biasing generator. If interfacing by AC couple, connect IINBIAS to GND, and external DC blocking capacitors are required for AC couple. The clock input supports only AC-coupled configuration. External DC blocking capacitors are needed as well. MITSUBISHI ELECTRIC -3- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC DATA OUTPUT The data output of ML0XX18 has integrated terminations on chip. The positive output OUT and the negative output OUTN have associated GND PAD named GNDO and GNDON, respectively. GNDO and GNDON are disconnected from other GND line on chip, and needed to be connected to GND externally. Give a special attention to impedance design for OUT and OUTN. The impedances of both output terminals need to be the same regardless of the output to drive an EAM/LD or not. For ML0CP18, design same output bond-wire lengths. This notification is of importance for proper operation of driver IC. The output waveforms of ML01618 (SLP) are shown in Figure 2, and those of ML0CP18 (Bare Die) are shown in Figure 3. Retimed by D-FF Vout= 3.047Vpp (High=-23.0mV Low= -3.070V) Tr/Tf=28.9/25.8ps Jitter PP=10.2ps ICRSADJ=0.368mA Non-retiming Vout= 3.107Vpp (High=-35.0mV Low= -3.142V) Tr/Tf=29.3/26.2ps Jitter PP=13.3ps ICRSADJ=0.356mA Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC), Im=6.0mA, IOFS=0mA Figure 2. ML01618(SLP) Output Waveforms Im=6.0mA Vout= 3.009Vpp (High=-58.5mV Low= -3.067V) Tr/Tf=29.8/29.3ps Jitter PP=12.4ps Im=2.0mA Vout= 1.025Vpp (High=-47.0mV Low= -1.072V) Tr/Tf=27.1/31.6ps Jitter PP=10.2ps Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC), IOFS=0mA, ICRSADJ=0.38mA, Retimed by D-FF Figure 3. ML0CP18 (Bare die) Output Waveform MITSUBISHI ELECTRIC -4- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC BUILT-IN D-FF The ML0XX18 has an internal D-FF to retime the data by the clock supplied from an external source. To use the D-FF retiming operation, connect CSEL to GND. On the other hand, by connecting CSEL to VEE, an integrated selector SEL will bypass the D-FF, and shut down the power supply of the D-FF and the clock input buffer. The power down feature at the non-retiming operation reduces the power dissipation of the ML0XX18. OUTPUT WAVEFORM ADJUSTMENT The ML0XX18 has output waveform adjustment capabilities of output swing, offset level, and output cross-point. The output voltage swing can be controlled by IM of Modulation Current Control block. Figure 4(a) shows the characteristics of output swing control. The output offset level can be adjusted by IOFS. The output offset level is defined as the high level of output waveform to GND. Figure 4(b) shows an offset control example. ICRSADJ is the current control input of cross point adjustment as shown in Figure 4(c). 0.5 0.5 0.0 0.0 -1.5 Vlow -0.5 -1.0 -1.5 -2.5 -2.0 -2.5 -3.0 -3.0 -3.5 -2.0 -3.5 Vlow 2.0 4.0 6.0 8.0 Im[mA] 70.0 60.0 50.0 40.0 30.0 20.0 10.0 00.0 -4.0 0.0 100.0 90.0 80.0 CrossPoint[%] -1.0 Vhigh High/Low[V] High/Low[V] -0.5 Vhigh 0.0 2.0 4.0 6.0 0.0 Ioff[mA] (a) Output Swing Control IOFS=0mA, ICRSADJ=0.4mA (b) Output Offset Control IM=4mA, ICRSADJ=0.4mA 0.1 0.2 0.3 0.4 0.5 0.6 ICRSADJ[mA] (c) Output Cross-point Control IM=6mA, IOFS=0mA Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC) Figure 4. ML0XX18 Control Characteristics MITSUBISHI ELECTRIC -5- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC PACKAGE DESCRIPTION (ML01618) GND CRSADJ GND VEE VEE GND IM IO F S Figure 5. Package Drawing of 32-pin Small Lead-frame Package (SLP) 32 31 30 29 28 27 26 25 GND DATA 3 22 OUT GND 4 21 GNDO GND 5 20 GNDON DATAN 6 19 OUTN GND 7 18 GND NC 8 17 NC 10 11 12 13 14 15 Figure 6. 16 • The pins specified as NC need to be left “OPEN”. • Pin 21”GNDO”, pin 20”GNDON” and pin 32”GND” are not connected to “GND” line inside chip. Connect these pins to GND externally. NC 9 GND 23 C LK N 2 GND GND GND CSEL C LK 24 GND 1 NC IIN B IA S • Exposed die pad portion on the back side of SLP needs to be connected to GND. In other words, when VEE is supplied by -5.2V, supply 0V to the die pad. In the case of positive power supply (+5.2V to GND terminals and 0V to VEE), supply +5.2V to the die pad. For the detailed information for the positive power supply usage, please contact to your local rep. Pin assignment of ML01618 (SLP) MITSUBISHI ELECTRIC -6- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC PAD ASSIGNMENT (ML0CP18) 1,600um 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 1 22 2 21 3 20 4 19 5 18 6 17 7 t=75um 8 9 10 11 12 13 14 15 16 2,300um • The back side of die needs to be connected to GND. In other words, when VEE is supplied with -5.2V, supply 0V to the backside. In the case of positive power supply (+5.2V to GND terminals and 0V to VEE), supply +5.2V to the backside. For the detailed information for the positive power supply usage, please contact to your local rep. • The pads specified as NC need to be left “OPEN”. • Pad 19”GNDON”, pad 20”GNDO” and pad 36”GND” are not connected to “GND” line inside chip. Connect these pads to GND externally. Figure 7. Pad assignment of ML0CP18 (Bare Die) MITSUBISHI ELECTRIC -7- ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC PAD DESCRIPTION (ML0CP18) PAD No. Symbol Center Coordinates Sizes PAD No. Symbol Description 1 GND ( 105, 1250) 90x90 20 GNDO ( 105, 1100) 90x90 21 OUT GND Ground Data Input Positive Ground ( 105, 950) 90x90 22 GND 4 GND Ground ( 105, 650) 90x90 23 CSEL 5 DATAN Data Input Negative Ground for OUT Data Output Positive Ground Re-timing/Non Re-timing Select Input 2 DATA 3 ( 105, 500) 90x90 24 NC No Connection Description 6 GND Ground ( 105, 350) 90x90 25 IOFS 7 GND Ground Clock Input Positive Ground (700, 105) 90x90 26 NC 8 CLK 9 GND 10 GND 11 CLKN 12 13 Positive Output Offset Voltage Control Current No Connection Output Swing Control Current No Connection Center Coordinates Sizes (2195, 950) 90x90 (2195, 1100) 90x90 (2195, 1250) 90x90 (2195,1495) 90x90 (2075,1495) 90x90 (1955,1495) 90x90 (1835,1495) 90x90 (1715,1495) 90x90 90x90 (850, 105) 90x90 27 IM (1000, 105) 90x90 (1300, 105) 90x90 28 29 NC VEE Supply Voltage (1595,1495) (1465,1495) 90x90 (1450, 105) 90x90 30 VEE Supply Voltage (1255,1495) 90x90 GND NC Ground Clock Input Negative Ground No Connection (1600, 105) (1835, 105) 90x90 31 32 VEE Supply Voltage 90x90 VEE (1045,1495) (835,1495) 90x90 14 NC No Connection (1955, 105) 90x90 33 NC (705,1495) 90x90 15 NC No Connection (2075, 105) 90x90 34 ICRSADJ (585,1495) 90x90 16 NC No Connection (2195, 105) 90x90 35 NC Supply Voltage No Connection Cross Point Adjust Control Current No Connection (465,1495) 90x90 17 GND (2195, 350) 90x90 36 GND 18 OUTN Ground Data output Negative (2195, 500) 90x90 Ground for OUTN (2195, 650) 19 GNDON 90x90 37 38 MITSUBISHI ELECTRIC -8- Ground 90x90 (345,1495) 90x90 NC No Connection (225,1495) 90x90 IINBIAS Input Bias Level Control Current (105,1495) 90x90 ‘04/1/14 rev.2.1 MITSUBISHI ICs for Optical Communication M L 0 X X 1 8 Notice: This is not a final specification. Some parametric limits are subject to change. 10Gb/s EA Modulator Driver IC NOTIFICATION FOR BARE DIE SUPPLY (ML0CP18) 1. Quality After the reception of bare die by the customer, performance, yield and reliability of the application of the bare die will not be guaranteed. The supplier does not have the responsibility for field failures in the applied product. 2. Storage a) Store in dry nitrogen. < Before opening shipped conductive film bag (dry N2 sealed) > Temperature : 15 to 35 deg. C Humidity : 45% - 75% RH Term : 3 months < After opening > Temperature : 15 to 35 deg. C Atmosphere : Dry N2 gas (The dew point should be less than -30 deg. C) (No contact with gas including ammonia and sulfur) Term : The appearance of the bare die is not guaranteed after its opening. b) Don’t apply excess vibration or shock. 3. Opening a package a) Handle devices in clean room or on clean bench. b) Take measures to avoid electro-static damage. c) To open a film bag, please use scissors or a knife. d) When taking out the devices, never touch devices barehanded. Please use clean tweezers or similar. When use tweezers, please catch a device by side to avoid cracking or damaging the device. Since gallium arsenide is more brittle material than silicon, special care must be taken. 4. Die bonding The following methods are recommended for die bonding. a) Die should be bonded lower than 300 deg. C. b) The time duration of die bonding at maximum temperature is recommended to be shorter than 15 sec. c) Cool down gradually, to avoid chip crack. d) All die bonding equipment and workers should be grounded. 5. Wire bonding The following methods are recommended for wire bonding. a) Bonding force of wire bonding is recommended to be less than 55 grams with ultrasonic. b) Check ultrasonic power not to damage on die and die pads. c) Cool down gradually. d) All wire bonding equipment and workers should be grounded. 6. Design a) It is recommended to use this product in a hermetic sealed condition (N2 sealed). b) It is recommended for customer to verify the performance and the qualification by customer's final product. Especially, oscillation and noise generation might happen. MITSUBISHI ELECTRIC -9- ‘04/1/14 rev.2.1