Mitsubishi ML0CP18 10gb/s ea modulator driver ic Datasheet

MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
GENERAL DESCRIPTION
The ML0XX18 is an external modulator driver for 10Gb/s optical communication systems. Output voltage swing, output
voltage offset, and output voltage cross-point are adjustable by controls of current inputs. A D-FF and a selector are
integrated on the chip to implement selectable re-timing/bypass function. Data and clock inputs have high sensitivity of
200mV differential amplitude. Both DC/AC-coupled connections are allowed for the data inputs. Clock input supports
AC-coupled connection. The ML0XX18 is available in a 32-pin Small Lead-frame Package (SLP-type) or in a die form.
FEATURES
·Operation for 10Gbps Optical Communication
·Adjustable Output Modulation Voltage:
·On-chip Input / Output 50Ω Termination
Vo-pp= 1 – 3Vpp
·Built-in D-FF
·Adjustable Output Voltage Offset:
(Retiming and Non-retiming Mode Selectable)
Voh= -1.0 – 0V
·Output Voltage Swing:
·Adjustable Output Voltage Cross-Point:
Vo-pp(Max.)=3 Vp-p min. @RL=50Ω
CP= 30 - 75%
·The -5.2V Single Power Supply
·DC or AC Coupled Data Input
< Keep safety first in your circuit designs! >
with High Sensitivity of 200mV Differential (100mV per side).
Mitsubishi Electric Corporation puts the maximum effort into
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them. Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (ⅰ)placement of
Substitutive, auxiliary circuits, (ⅱ)use of non-flammable
material or (ⅲ)prevention against any malfunction or mishap.
APPLICATION
·SONET OC-192 and SDH STM-64 Transmission systems
·10Gb/s Ethernet Modules
·10Gb/s Fibre Channel Modules
RECOMMENDED OPERATING CONDITIONS
—
Min.
-5.46
Ratings
Typ.
-5.2
Max.
-4.94
RL=50Ω
—
0
—
V
AC-coupled/side
DC-coupled
DC-coupled
AC-coupled/side
—
Bias
Non-Bias
—
—
0.1
-0.45
-1.0
0.1
0
0
—
0.25
0
0.25
-0.375
-0.625
0.25
—
—
Floating
0.35
—
1
-0.0
-0.55
1
6.0
6.0
—
0.5
85
V
V
V
V
mA
mA
mA
mA
ºC
Symbol
Parameter
Test Conditions
VEE
VGNDO
VGNDON
VDATA
VDATA(High)
VDATA(Low)
VCLK
IM
Supply Voltage
Driver Output Termination Voltage
(GNDO/GNDON)
DATA Input Voltage Amplitude
DATA Input Level High
DATA Input Level Low
CLK Input Voltage Amplitude
Output Voltage Modulation Control Current
IOFS
ICRSADJ
TC
Output Voltage offset Control Current
Cross-Point Control Current
Operating Case Temperature
MITSUBISHI
ELECTRIC
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Unit
V
‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
ABSOLUTE MAXIMUM RATINGS
Ratings
Symbol
Parameter
VEE
Supply Voltage
All Pins
Input Voltage
Output Voltage
Output Current
Output Voltage Modulation Control Current
Output Voltage offset Control Current
Cross-Point Control Current
Junction Temperature
Storage Temperature
VDATA, VCLK
VOUT
IOUT
IM
IOFS
ICRSADJ
TJ
TSTG
Min.
-7.0
VEE
-6
-4
—
—
—
—
-40
-40
Max.
0.5
0.5
0.5
2.5
100
10
10
3
150
150
Unit
V
V
V
V
mA
mA
mA
mA
ºC
ºC
ELECTRICAL CHARACTERISTICS ( Ta = 25±3ºC, VEE =-5.2V, fDATA =10.3Gb/s, PRBS 231-1, RL=50Ω)
Symbol
fDATA
fCLK
IEE
VO-PP
(Max.)
VO-PP
(Min.)
VOH
VOL
VOFS
CP
tR
tF
Parameter
Maximum Data Rate
Clock Rate
Power Supply Current
Test Conditions
NRZ
IOFS=floating, IM=6mA,
Retiming mode
CP=50%, AC-coupled inputs
Non retiming mode
Min.
—
1.0
—
—
Ratings
Typ.
10.3
10.3
310
270
Max.
—
—
TBD
TBD
Unit
Gb/s
GHz
mA
Output Voltage Swing(Max.)
IOFS=floating, IM=6mA, CP=50%
—
3.0
—
Vp-p
Output Voltage Swing(Min.)
IOFS=floating, IM=2mA, CP=50%
—
1.0
—
Vp-p
Output High Voltage
Output Low Voltage
Output Offset Voltage
Cross-point Control Range
Rise Time
Fall Time
IOFS=floating, IM=6mA, CP=50%
JITPP
Jitter P-P
IOFS=floating, IM=6mA, CP=50%,
PM
S11
(Data)
S11
(CLK)
S22
Phase Margin
Data Input Reflection
Coefficient
Clock Input Reflection
Coefficient
Output Reflection Coefficient
—
—
-1.0
TBD
—
—
—
—
270
0
-3.2
—
—
30
30
12
12
—
—
—
0
75
—
—
—
—
—
V
V
V
%
ps
ps
ps
ps
degrees
50MHz to 10GHz
-
-10
-
dB
1GHz to 10GHz
-
-10
-
dB
50MHz to 10GHz, DOUT =ON
-
-10
-
dB
IOFS=floating, VOFS=0V
IOFS=floating, IM=6mA, CP=50%, 20-80%
IOFS=floating, IM=6mA, CP=50%, 20-80%
Retiming mode
Non retiming mode
ORDERING INFORMATION
Part Number
ML0CP18
ML01618
Description
Bare Die
32-pin SLP, 5mm x 5mm
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
FUNCTIONAL DESCRIPTION
The ML0XX18 is an external modulator driver integrating a D-FF and output waveform adjustment controls, such as
output swing, offset voltage, and cross point. These functions of the ML0XX18 help customers to realize an excellent
optical waveform on their system.
Figure 1 shows the block diagram of the ML0XX18.
IINBIAS
50Ω
GND
VEE
IOFS
ICRSADJ
Offset
Voltage
Control
50Ω
GNDO
GNDON
DATA
DATAN
D-FF
SEL
CLK
Cross
-Point
Control
Modulation
Current
Control
CLKN
50Ω
OUT
OUTN
Modulation
50Ω
CSEL
IM
Figure 1. ML0XX18 Block Diagram
DATA/CLOCK INPUT
Both the data and clock inputs have on-chip 50Ω terminations. Thanks to the high gain input buffers, the sensitivities of data
and clock inputs are as high as 200mV differential.
For the data input interface, both DC/AC-coupled connections are allowed. In the case of DC couple, keep IINBIAS floating
or connect to VEE in order to disable the internal biasing generator. If interfacing by AC couple, connect IINBIAS to GND, and
external DC blocking capacitors are required for AC couple.
The clock input supports only AC-coupled configuration. External DC blocking capacitors are needed as well.
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
DATA OUTPUT
The data output of ML0XX18 has integrated terminations on chip. The positive output OUT and the negative output OUTN
have associated GND PAD named GNDO and GNDON, respectively. GNDO and GNDON are disconnected from other GND
line on chip, and needed to be connected to GND externally.
Give a special attention to impedance design for OUT and OUTN. The impedances of both output terminals need to be the
same regardless of the output to drive an EAM/LD or not. For ML0CP18, design same output bond-wire lengths. This
notification is of importance for proper operation of driver IC.
The output waveforms of ML01618 (SLP) are shown in Figure 2, and those of ML0CP18 (Bare Die) are shown in Figure 3.
Retimed by D-FF Vout= 3.047Vpp
(High=-23.0mV Low= -3.070V)
Tr/Tf=28.9/25.8ps
Jitter PP=10.2ps
ICRSADJ=0.368mA
Non-retiming Vout= 3.107Vpp
(High=-35.0mV Low= -3.142V)
Tr/Tf=29.3/26.2ps
Jitter PP=13.3ps
ICRSADJ=0.356mA
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC),
Im=6.0mA, IOFS=0mA
Figure 2.
ML01618(SLP) Output Waveforms
Im=6.0mA Vout= 3.009Vpp
(High=-58.5mV Low= -3.067V)
Tr/Tf=29.8/29.3ps
Jitter PP=12.4ps
Im=2.0mA Vout= 1.025Vpp
(High=-47.0mV Low= -1.072V)
Tr/Tf=27.1/31.6ps
Jitter PP=10.2ps
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC),
IOFS=0mA, ICRSADJ=0.38mA, Retimed by D-FF
Figure 3.
ML0CP18 (Bare die) Output Waveform
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
BUILT-IN D-FF
The ML0XX18 has an internal D-FF to retime the data by the clock supplied from an external source. To use the D-FF
retiming operation, connect CSEL to GND. On the other hand, by connecting CSEL to VEE, an integrated selector SEL will
bypass the D-FF, and shut down the power supply of the D-FF and the clock input buffer. The power down feature at the
non-retiming operation reduces the power dissipation of the ML0XX18.
OUTPUT WAVEFORM ADJUSTMENT
The ML0XX18 has output waveform adjustment capabilities of output swing, offset level, and output cross-point.
The output voltage swing can be controlled by IM of Modulation Current Control block. Figure 4(a) shows the characteristics
of output swing control.
The output offset level can be adjusted by IOFS. The output offset level is defined as the high level of output waveform to
GND. Figure 4(b) shows an offset control example. ICRSADJ is the current control input of cross point adjustment as shown
in Figure 4(c).
0.5
0.5
0.0
0.0
-1.5
Vlow
-0.5
-1.0
-1.5
-2.5
-2.0
-2.5
-3.0
-3.0
-3.5
-2.0
-3.5
Vlow
2.0
4.0
6.0
8.0
Im[mA]
70.0
60.0
50.0
40.0
30.0
20.0
10.0
00.0
-4.0
0.0
100.0
90.0
80.0
CrossPoint[%]
-1.0
Vhigh
High/Low[V]
High/Low[V]
-0.5
Vhigh
0.0
2.0
4.0
6.0
0.0
Ioff[mA]
(a) Output Swing Control
IOFS=0mA, ICRSADJ=0.4mA
(b) Output Offset Control
IM=4mA, ICRSADJ=0.4mA
0.1
0.2
0.3
0.4
0.5
0.6
ICRSADJ[mA]
(c) Output Cross-point Control
IM=6mA, IOFS=0mA
Vss=-5.2V, Ta=RT, fDATA=10Gb/s, Data/Clk=0.25Vpp(AC)
Figure 4. ML0XX18 Control Characteristics
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
PACKAGE DESCRIPTION (ML01618)
GND
CRSADJ
GND
VEE
VEE
GND
IM
IO F S
Figure 5. Package Drawing of 32-pin Small Lead-frame Package (SLP)
32
31
30
29
28
27
26
25
GND
DATA
3
22
OUT
GND
4
21
GNDO
GND
5
20
GNDON
DATAN
6
19
OUTN
GND
7
18
GND
NC
8
17
NC
10
11
12
13
14
15
Figure 6.
16
• The pins specified as NC need to be
left “OPEN”.
• Pin 21”GNDO”, pin 20”GNDON” and
pin 32”GND” are not connected to
“GND” line inside chip. Connect these
pins to GND externally.
NC
9
GND
23
C LK N
2
GND
GND
GND
CSEL
C LK
24
GND
1
NC
IIN B IA S
• Exposed die pad portion on the back
side of SLP needs to be connected to
GND. In other words, when VEE is
supplied by -5.2V, supply 0V to the die
pad. In the case of positive power
supply (+5.2V to GND terminals and
0V to VEE), supply +5.2V to the die
pad. For the detailed information for
the positive power supply usage,
please contact to your local rep.
Pin assignment of ML01618 (SLP)
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ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
PAD ASSIGNMENT (ML0CP18)
1,600um
38 37 36 35 34 33 32
31
30
29 28 27 26 25 24 23
1
22
2
21
3
20
4
19
5
18
6
17
7
t=75um
8
9
10 11 12
13 14 15 16
2,300um
• The back side of die needs to be connected to GND. In other words, when VEE is supplied with
-5.2V, supply 0V to the backside. In the case of positive power supply (+5.2V to GND terminals and
0V to VEE), supply +5.2V to the backside. For the detailed information for the positive power supply
usage, please contact to your local rep.
• The pads specified as NC need to be left “OPEN”.
• Pad 19”GNDON”, pad 20”GNDO” and pad 36”GND” are not connected to “GND” line inside chip.
Connect these pads to GND externally.
Figure 7.
Pad assignment of ML0CP18 (Bare Die)
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
PAD DESCRIPTION (ML0CP18)
PAD
No.
Symbol
Center
Coordinates
Sizes
PAD
No.
Symbol
Description
1
GND
( 105, 1250)
90x90
20
GNDO
( 105, 1100)
90x90
21
OUT
GND
Ground
Data Input
Positive
Ground
( 105, 950)
90x90
22
GND
4
GND
Ground
( 105, 650)
90x90
23
CSEL
5
DATAN
Data Input
Negative
Ground for OUT
Data Output
Positive
Ground
Re-timing/Non
Re-timing
Select
Input
2
DATA
3
( 105, 500)
90x90
24
NC
No Connection
Description
6
GND
Ground
( 105, 350)
90x90
25
IOFS
7
GND
Ground
Clock Input
Positive
Ground
(700, 105)
90x90
26
NC
8
CLK
9
GND
10
GND
11
CLKN
12
13
Positive Output
Offset Voltage
Control Current
No Connection
Output Swing
Control Current
No Connection
Center
Coordinates
Sizes
(2195, 950)
90x90
(2195, 1100)
90x90
(2195, 1250)
90x90
(2195,1495)
90x90
(2075,1495)
90x90
(1955,1495)
90x90
(1835,1495)
90x90
(1715,1495)
90x90
90x90
(850, 105)
90x90
27
IM
(1000, 105)
90x90
(1300, 105)
90x90
28
29
NC
VEE
Supply Voltage
(1595,1495)
(1465,1495)
90x90
(1450, 105)
90x90
30
VEE
Supply Voltage
(1255,1495)
90x90
GND
NC
Ground
Clock Input
Negative
Ground
No Connection
(1600, 105)
(1835, 105)
90x90
31
32
VEE
Supply Voltage
90x90
VEE
(1045,1495)
(835,1495)
90x90
14
NC
No Connection
(1955, 105)
90x90
33
NC
(705,1495)
90x90
15
NC
No Connection
(2075, 105)
90x90
34
ICRSADJ
(585,1495)
90x90
16
NC
No Connection
(2195, 105)
90x90
35
NC
Supply Voltage
No Connection
Cross Point Adjust
Control Current
No Connection
(465,1495)
90x90
17
GND
(2195, 350)
90x90
36
GND
18
OUTN
Ground
Data output
Negative
(2195, 500)
90x90
Ground for OUTN
(2195, 650)
19
GNDON
90x90
37
38
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ELECTRIC
-8-
Ground
90x90
(345,1495)
90x90
NC
No Connection
(225,1495)
90x90
IINBIAS
Input Bias Level
Control Current
(105,1495)
90x90
‘04/1/14 rev.2.1
MITSUBISHI ICs for Optical Communication
M L 0 X X 1 8
Notice: This is not a final specification.
Some parametric limits are subject to change.
10Gb/s EA Modulator Driver IC
NOTIFICATION FOR BARE DIE SUPPLY (ML0CP18)
1. Quality
After the reception of bare die by the customer, performance, yield and reliability of the application of the bare die will not be
guaranteed. The supplier does not have the responsibility for field failures in the applied product.
2. Storage
a) Store in dry nitrogen.
< Before opening shipped conductive film bag (dry N2 sealed) >
Temperature
: 15 to 35 deg. C
Humidity : 45% - 75% RH
Term
: 3 months
< After opening >
Temperature
: 15 to 35 deg. C
Atmosphere
: Dry N2 gas
(The dew point should be less than -30 deg. C)
(No contact with gas including ammonia and sulfur)
Term
: The appearance of the bare die is not guaranteed after its opening.
b) Don’t apply excess vibration or shock.
3. Opening a package
a) Handle devices in clean room or on clean bench.
b) Take measures to avoid electro-static damage.
c) To open a film bag, please use scissors or a knife.
d) When taking out the devices, never touch devices barehanded. Please use clean tweezers or similar.
When use tweezers, please catch a device by side to avoid cracking or damaging the device.
Since gallium arsenide is more brittle material than silicon, special care must be taken.
4. Die bonding
The following methods are recommended for die bonding.
a) Die should be bonded lower than 300 deg. C.
b) The time duration of die bonding at maximum temperature is recommended to be shorter than 15 sec.
c) Cool down gradually, to avoid chip crack.
d) All die bonding equipment and workers should be grounded.
5. Wire bonding
The following methods are recommended for wire bonding.
a) Bonding force of wire bonding is recommended to be less than 55 grams with ultrasonic.
b) Check ultrasonic power not to damage on die and die pads.
c) Cool down gradually.
d) All wire bonding equipment and workers should be grounded.
6. Design
a) It is recommended to use this product in a hermetic sealed condition (N2 sealed).
b) It is recommended for customer to verify the performance and the qualification by customer's final product.
Especially, oscillation and noise generation might happen.
MITSUBISHI
ELECTRIC
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‘04/1/14 rev.2.1
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