JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors (built-in resistors) DTC144TE/ DTC144TUA/ DTC144TCA/DTC144TKA/DTC144TSA DIGITAL TRANSISTOR (NPN) Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. PIN CONNENCTIONS AND MARKING DTC144TE SOT-523 DTC144TUA (1) Base (1)(1) Base Base (2) Emitter (2)(2) Emitter Emitter (3) Collector (3)(3) Collector Collector SOT-323 Addreviated symbol: 06 DTC144TKA (1) Base Addreviated symbol: 06 DTC144TCA DTA114ECA (1) Base (1) Base (2) Emitter (2) Emitter (3) Collector (3) Collector (2) Emitter (3) Collector SOT-23-3L SOT-23 Addreviated symbol: 06 DTC144TSA (1) Emitter (2) Collector (3) Base TO-92S Addreviated symbol: 06 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol LIMITS(DTC144T□) Parameter E UA KA Units CA SA VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation Tj Junction temperature TJ, Tstg Junction and Storage Temperature 150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless 200 300 mW 150 ℃ -55~+150 ℃ otherwise Symbol Test Collector-base breakdown voltage V(BR)CBO Ic=50µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Imput resistor R1 Typical Characteristics conditions specified) MIN 100 TYP 300 IC=5mA,IB=0.5mA MAX 600 0.3 VCE=10V,IE=-5mA, f=100MHz 250 32.9 47 UNIT V MHz 61.1 kΩ