BY 4 THRU BY 16 4000V-16000V High Voltage Silicon Rectifier Diodes 1.0A-0.3A FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Lead: Axial leads, solderable per MIL-STD-202, method 208 guranteed * Polarity: Color band denotes cathode end * Mounting position: Any * Weight: 1.10 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum ratings and Characteristics Type Rep. peak reverse volt. Surge peak reverse volt. Max. forward current Period. Spitzensperrspg. Stoßspitzensperrspg. Dauergrenzstrom VRRM [V] VRSM [V] IFAV [A] 1) Forward volt. Durchlass-Spg. VF [V] 2) BY4 4000 4000 1.0 < 4.0 BY6 6000 6000 1.0 < 6.0 BY8 8000 8000 0.5 < 8.0 BY12 12000 12000 0.5 < 10.0 BY16 16000 16000 0.3 < 15.0 < 1 µA < 25 µA Leakage Current Sperrstrom Tj = 25°C Tj = 100°C V = VRRM V = VRRM Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle TA = 25°C IFSM 100 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 50 A2s Tj -50...+150°C -50...+150°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur TS Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft E-mail: [email protected] 1 of 2 thA < 25 K/W 1) Web Site: www.taychipst.com BY 4 THRU BY 16 4000V-16000V High Voltage Silicon Rectifier Diodes RATINGS AND CHARACTERISTIC CURVES 120 1.0A-0.3A BY 4 THRU BY 16 10 [%] 100 [A] 80 1 BY4 BY6 BY8 BY12 BY16 60 -1 40 10 20 IF IFAV 0 0 TA 50 100 150 10-2 [°C] Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 1 Rated forward current versus ambient temperature ) Zul. Richtstrom in Abh. von der Umgebungstemp.1) 102 [A] 10 îF 1 1 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com