eupec BSM35GD120DN2 Igbt power module Datasheet

BSM 35 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
VCE
BSM 35 GD 120 DN2
BSM35GD120DN2E3224
IC
Package
Ordering Code
1200V 50A
ECONOPACK 2
C67076-A2506-A67
1200V 50A
ECONOPACK 2K
C67070-A2506-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
1200
Unit
V
1200
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
50
TC = 80 °C
35
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
100
TC = 80 °C
70
Power dissipation per IGBT
W
Ptot
TC = 25 °C
280
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.44
Diode thermal resistance, chip case
RthJCD
≤ 0.8
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
16
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
1
+ 150
°C
-40 ... + 125
K/W
sec
40 / 125 / 56
Oct-20-1997
BSM 35 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
V
VGE(th)
VGE = VCE, IC = 1.2 mA
4.5
5.5
6.5
VGE = 15 V, IC = 35 A, Tj = 25 °C
-
2.7
3.2
VGE = 15 V, IC = 35 A, Tj = 125 °C
-
3.3
3.9
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
mA
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.6
1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
2.4
-
Gate-emitter leakage current
nA
IGES
VGE = 20 V, VCE = 0 V
-
-
150
AC Characteristics
Transconductance
VCE = 20 V, IC = 35 A
Input capacitance
11
nF
-
2
-
-
0.3
-
-
0.14
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
gfs
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
2
Oct-20-1997
BSM 35 GD 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
Rise time
-
60
120
-
60
120
-
400
600
-
50
75
tr
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
Free-Wheel Diode
Diode forward voltage
V
VF
IF = 35 A, VGE = 0 V, Tj = 25 °C
-
2.3
2.9
IF = 35 A, VGE = 0 V, Tj = 125 °C
-
1.9
-
Reverse recovery time
µs
trr
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
-
0.25
µC
Qrr
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
-
2
-
Tj = 125 °C
-
5
-
3
Oct-20-1997
BSM 35 GD 120 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
300
W
A
260
Ptot
240
IC
220
t = 18.0µs
p
10 2
200
180
100 µs
160
10 1
140
120
1 ms
100
10 0
80
10 ms
60
40
DC
20
0
0
20
40
60
80
100
120
°C
10
160
-1
10
0
10
1
10
2
10
3
TC
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
55
A
IC
V
VCE
K/W
45
ZthJC
40
10 -1
35
30
10 -2
D = 0.50
25
0.20
20
0.10
15
10 -3
0.05
single pulse
0.02
10
0.01
5
0
0
20
40
60
80
100
120
°C
160
TC
10 -4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Oct-20-1997
BSM 35 GD 120 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
parameter: tp = 80 µs, Tj = 125 °C
70
70
A
A
60
IC
55
50
45
60
17V
15V
13V
11V
9V
7V
IC
55
50
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
0
5
0
0
1
2
3
V
5
0
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
70
A
60
IC
55
50
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
10
V
14
VGE
5
Oct-20-1997
BSM 35 GD 120 DN2
Typ. gate charge
VGE = (QGate)
parameter: IC puls = 35 A
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
20
V
nF
VGE
16
C
14
600 V
800 V
Ciss
10 0
12
10
Coss
8
Crss
10 -1
6
4
2
0
0
40
80
120
160
nC
10 -2
0
220
5
10
15
20
25
30
V
VCE
QGate
40
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC 10 µs, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
1.5
6
1.0
4
0.5
0.0
0
2
200
400
600
800
1000 1200
V
1600
VCE
6
0
0
200
400
600
800
1000 1200
V 1600
VCE
Oct-20-1997
BSM 35 GD 120 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 39
par.: VCE = 600 V, VGE = ± 15 V, IC = 35 A
10 3
t
10 3
tdoff
t
ns
tdoff
ns
tdon
tr
10
2
10
tr
tdon
2
tf
10 1
0
10
20
30
40
50
60
A
IC
tf
10 1
0
80
20
40
60
80
100 120 140
180
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 39
par.: VCE = 600V, VGE = ± 15 V, IC = 35 A
20
20
mWs
E
mWs
Eon
16
E
16
14
14
12
12
10
10
Eon
8
8
Eoff
6
6
4
4
2
2
0
0
10
20
30
40
50
60
A
IC
80
0
0
Eoff
20
40
60
80
100 120 140
180
RG
7
Oct-20-1997
BSM 35 GD 120 DN2
Transient thermal impedance
Zth JC = (tp)
parameter: D = tp / T
Forward characteristics of fast recovery
reverse diode IF = f(VF)
parameter: Tj
Diode
10 0
70
A
K/W
60
IF
55
ZthJC
50
10 -1
45
40
Tj=125°C
Tj=25°C
35
D = 0.50
30
0.20
25
10 -2
0.10
0.05
20
15
0.02
single pulse
0.01
10
5
0
0.0
0.5
1.0
1.5
2.0
V
3.0
VF
10 -3
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
8
Oct-20-1997
BSM 35 GD 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 180 g
9
Oct-20-1997
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