N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM Features 512K × 16bit Overview The N08L6182A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N08L6182A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 512Kb x 16 SRAMs. • Single Wide Power Supply Range 1.65 to 2.2 Volts • Very low standby current 0.5µA at 1.8V (Typical) • Very low operating current 1.0mA at 1.8V and 1µs (Typical) • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical) • Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion • Low voltage data retention Vcc = 1.2V • Very fast output enable access time 25ns OE access time • Very fast Page Mode access time tAAP = 25ns • Automatic power down to standby mode • TTL compatible three-state output driver Product Family Part Number Operating Temperature Package Type N08L6182AB 48 - BGA N08L6182AB2 48 - BGA Green Power Supply (Vcc) Speed 70ns @ 1.8V -40oC to +85oC 1.65V - 2.2V 85ns @ 1.65V Pin Configuration Standby Operating Current (ISB), Current (Icc), Typical Typical 0.5 µA 1 mA @ 1MHz Pin Descriptions 1 2 3 4 5 6 A LB OE A0 A1 A2 CE2 B I/O8 UB A3 A4 CE1 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D VSS I/O11 A17 A7 I/O3 VCC E VCC I/O12 NC A16 I/O4 VSS F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC 48 Pin BGA (top) 8 x 10 mm ©2008 SCILLC. All rights reserved. July 2008 - Rev. 8 Pin Name Pin Function A0-A18 Address Inputs WE CE1, CE2 OE LB UB I/O0-I/O15 Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input VCC Power Data Inputs/Outputs VSS Ground NC Not Connected Publication Order Number: N08L6182A/D N08L6182A Functional Block Diagram Word Address Decode Logic Address Inputs A4 - A18 Page Address Decode Logic Input/ Output Mux and Buffers Word Mux Address Inputs A0 - A3 32K Page x 16 word x 16 bit RAM Array I/O0 - I/O7 I/O8 - I/O15 CE1 CE2 WE OE UB LB Control Logic Functional Description CE1 CE2 WE OE UB LB I/O0 - I/O151 MODE H X X X X X High Z Standby2 Standby High Z 2 Standby Standby High Z Standby2 Standby Data In Write3 Active -> Standby4 X X L X X X X X X X H H 1 L L 1 POWER L H L X3 L H H L L1 L1 Data Out Read Active -> Standby4 L H H H L1 L1 High Z Active Standby4 1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7 are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown. 2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally isolated from any external influence and disabled from exerting any influence externally. 3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit. 4. The device will consume active power in this mode whenever addresses are changed. Data inputs are internally isolated from any expernal influence. Capacitance1 Item Symbol Test Condition Input Capacitance CIN I/O Capacitance CI/O Max Unit VIN = 0V, f = 1 MHz, TA = 25oC 8 pF VIN = 0V, f = 1 MHz, TA = 25oC 8 pF 1. These parameters are verified in device characterization and are not 100% tested Rev. 8 | Page 2 of 10 | www.onsemi.com Min N08L6182A Absolute Maximum Ratings1 Item Symbol Rating Unit Voltage on any pin relative to VSS VIN,OUT –0.3 to VCC+0.3 V Voltage on VCC Supply Relative to VSS VCC –0.3 to 3.0 V Power Dissipation PD 500 mW Storage Temperature TSTG –40 to 125 oC Operating Temperature TA -40 to +85 oC Soldering Temperature and Time TSOLDER 260oC, 10sec oC 1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Operating Characteristics (Over Specified Temperature Range) Typ1 Max Unit 1.65 1.8 2.2 V Symbol Supply Voltage VCC Data Retention Voltage VDR Input High Voltage VIH 0.7VCC VCC+0.3 V Input Low Voltage VIL –0.3 0.3VCC V Output High Voltage VOH IOH = 0.2mA Output Low Voltage VOL IOL = -0.2mA 0.2 V Input Leakage Current ILI VIN = 0 to VCC 0.5 µA Output Leakage Current ILO OE = VIH or Chip Disabled 0.5 µA Read/Write Operating Supply Current @ 1 µs Cycle Time2 ICC1 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 1.0 3.0 mA Read/Write Operating Supply Current @ 70 ns Cycle Time2 ICC2 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 10.0 14.0 mA Page Mode Operating Supply Current @ 70 ns Cycle Time2 ICC3 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0 0.5 3.0 mA Read/Write Quiescent Operating Supply Current3 ICC4 VCC=2.2 V, VIN=VIH or VIL Chip Enabled, IOUT = 0, f=0 20 µA ISB1 VIN = VCC or 0V Chip Disabled tA= 85oC, VCC = 2.2 V 20.0 µA 10 µA Maximum Standby Current3 Maximum Data Retention Current3 IDR Test Conditions Min. Item Chip Disabled 3 Vcc = 1.2V, VIN = VCC or 0 Chip Disabled, tA= 85oC 1.2 V VCC–0.2 V 0.5 1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested. 2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive output capacitance expected in the actual system. 3. This device assumes a standby mode if the chip is disabled (CE1 high or CE2 low). In order to achieve low standby current all inputs must be within 0.2 volts of either VCC or VSS. Rev. 8 | Page 3 of 10 | www.onsemi.com N08L6182A Power Savings with Page Mode Operation (WE = VIH) Page Address (A4 - A18) Word Address (A0 - A3) Open page Word 1 Word 2 ... Word 16 CE1 CE2 OE LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 16-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Rev. 8 | Page 4 of 10 | www.onsemi.com N08L6182A Timing Test Conditions Item Input Pulse Level 0.1VCC to 0.9 VCC Input Rise and Fall Time 5ns Input and Output Timing Reference Levels 0.5 VCC Output Load 30pF Operating Temperature -40 to +85 oC Timing 1.65 - 2.2 V 1.8 - 2.2 V Item Symbol Read Cycle Time tRC Address Access Time (Random Access) tAA 85 70 ns Address Access Time (Page Mode) tAAP 30 25 ns Chip Enable to Valid Output tCO 85 70 ns Output Enable to Valid Output tOE 30 25 ns Byte Select to Valid Output tLB, tUB 85 70 ns Chip Enable to Low-Z output tLZ 10 10 ns Output Enable to Low-Z Output tOLZ 5 5 ns Byte Select to Low-Z Output tLBZ, tUBZ 10 10 ns Chip Disable to High-Z Output tHZ 0 20 0 20 ns Output Disable to High-Z Output tOHZ 0 20 0 20 ns Byte Select Disable to High-Z Output tLBHZ, tUBHZ 0 20 0 20 ns Output Hold from Address Change tOH 5 5 ns Write Cycle Time tWC 85 70 ns Chip Enable to End of Write tCW 50 50 ns Address Valid to End of Write tAW 50 50 ns Byte Select to End of Write tLBW, tUBW 50 50 ns Write Pulse Width tWP 40 40 ns Address Setup Time tAS 0 0 ns Write Recovery Time tWR 0 0 ns Write to High-Z Output tWHZ Data to Write Time Overlap tDW 40 40 ns Data Hold from Write Time tDH 0 0 ns End Write to Low-Z Output tOW 5 5 ns Min. Max. 85 Min. 70 20 Rev. 8 | Page 5 of 10 | www.onsemi.com Max. Units ns 20 ns N08L6182A Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH) tRC Address tAA, tAAP tOH Data Out Previous Data Valid Data Valid Timing Waveform of Read Cycle (WE=VIH) tRC Address tAA, tAAP tHZ CE1 tCO CE2 tLZ tOHZ tOE OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z tLBHZ, tUBHZ Data Valid Rev. 8 | Page 6 of 10 | www.onsemi.com N08L6182A Timing Waveform of Page Mode Read Cycle (WE = VIH) tRC Page Address (A4 - A17) tAAP tAA Word Address (A0 - A3) tHZ CE1 tCO CE2 tOE tOHZ OE tOLZ tLB, tUB LB, UB tLBLZ, tUBLZ Data Out High-Z Rev. 8 | Page 7 of 10 | www.onsemi.com tLBHZ, tUBHZ N08L6182A Timing Waveform of Write Cycle (WE control) tWC Address tWR tAW CE1 tCW CE2 tLBW, tUBW LB, UB tAS tWP WE tDW High-Z tDH Data Valid Data In tWHZ tOW High-Z Data Out Timing Waveform of Write Cycle (CE1 Control) tWC Address tAW CE1 (for CE2 Control, use inverted signal) tWR tCW tAS tLBW, tUBW LB, UB tWP WE tDW Data Valid Data In tLZ Data Out tDH tWHZ High-Z Rev. 8 | Page 8 of 10 | www.onsemi.com N08L6182A Ball Grid Array Package 0.20±0.05 1.10±0.10 D A1 BALL PAD CORNER (3) 1. 0.30±0.05 DIA. E 2. SEATING PLANE - Z 0.15 Z 0.05 TOP VIEW SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD MAXIMUM SOLDER BALL DIAMETER. CORNER PARALLEL TO PRIMARY Z. SD e SE 2. PRIMARY DATUM Z AND SEATING PLANE ARE DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 3. A1 BALL PAD CORNER I.D. TO BE MARKED BY INK. K TYP J TYP e BOTTOM VIEW Dimensions (mm) e = 0.75 D 8±0.10 SD SE J K BALL MATRIX TYPE 0.375 0.375 2.125 2.375 FULL E 10±0.10 Rev. 8 | Page 9 of 10 | www.onsemi.com Z N08L6182A Ordering Information Part Number Package Shipping Method N08L6182AB7I Leaded 48-BGA Tray N08L6182AB27I Green 48-BGA (RoHS Compliant) Tray N08L6182AB7IT Leaded 48-BGA Tape & Reel N08L6182AB27IT Green 48-BGA (RoHS Compliant) Tape & Reel Revision History Revision Date Change Description A Jan. 2001 Initial Advance Release B Mar. 2001 Corrected voltage in Timing table C Dec. 2001 Part number change from EM512W16, modified Overview and Features, added Page Mode Operatin diagram, revised Operating Characteristics table, Package diagram, Functional Description table and Ordering Information diagram D Nov. 2002 Replaced Isb and Icc on Product Family table with typical values E Oct. 2004 Added Green Package Option Dec. 2005 Added RoHS compliant on green packages F G 8 September 2006 Converted to AMI Semiconductor July 2008 Converted to ON Semiconductor and new part numbers ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor PO Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East & Africa Technical Support: Phone 421-33-790-2910 Japan Customer Focus Center: Phone 81-3-5773-3850 Rev. 8 | Page 10 of 10 | www.onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative