AOSMD AO6415 20v p-channel mosfet Datasheet

AO6415
20V P-Channel MOSFET
General Description
Product Summary
The AO6415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
VDS
-20V
ID (at VGS=-10V)
-3.3A
RDS(ON) (at VGS= -10V)
< 82mΩ
RDS(ON) (at VGS= -4.5V)
< 100mΩ
RDS(ON) (at VGS= -2.5V)
< 140mΩ
Typical ESD protection
HBM Class 2
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
2
5
D
G
3
4
S
D
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 2: Jul 2011
Steady-State
Steady-State
A
1.25
W
0.8
TJ, TSTG
Symbol
t ≤ 10s
V
-17
PD
TA=70°C
±12
-2.7
IDM
TA=25°C
Power Dissipation B
Units
V
-3.3
ID
TA=70°C
Maximum
-20
RθJA
RθJL
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-55 to 150
Typ
82
111
56
°C
Max
100
140
70
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6415
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
-5
±10
µA
V
68
82
95
115
VGS=-4.5V, ID=-2A
80
100
mΩ
VGS=-2.5V, ID=-1A
107
140
mΩ
8.6
VDS=VGS, ID=-250µΑ
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-17
VGS=-10V, ID=-3.3A
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-3.3A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
µA
-1.2
VDS=0V, VGS= ±12V
Gate Threshold Voltage
Crss
Units
-0.85
Gate-Body leakage current
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-2A
A
-0.76
mΩ
S
-1
V
-1.5
A
250
325
400
pF
40
63
85
pF
22
37
52
pF
11.2
17
Ω
3.2
4.5
nC
0.6
nC
0.9
nC
11
ns
VGS=-4.5V, VDS=-10V, RL=5Ω,
RGEN=3Ω
5.5
ns
22
ns
8
ns
IF=-2A, dI/dt=100A/µs
6.1
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
1.4
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Jul 2011
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Page 2 of 5
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
30
-10V
25
9
-3.5V
-ID(A)
20
-ID (A)
VDS=-5V
-4.5V
15
6
-2.5V
10
3
VGS=-2.0V
125°C
5
25°C
0
0
0
1
2
3
4
0
5
2
3
4
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
170
Normalized On-Resistance
1.80
VGS=-2.5V
140
RDS(ON) (mΩ
Ω)
1
110
VGS=-4.5V
80
VGS=-10V
50
ID=-3.3A, VGS=-10V
1.60
ID=-2A, VGS=-4.5V
1.40
ID=-1A, VGS=-2.5V
1.20
1.00
0.80
20
0
0
2
6
8
-I4D (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
180
ID=-3.3A
1.0E+00
150
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
120
125°C
25°C
1.0E-02
90
1.0E-03
25°C
60
1.0E-04
1.0E-05
30
0
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Jul 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
5
VDS=-10V
ID=-2A
450
Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss
300
150
Coss
1
Crss
0
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
5
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
Power (W)
10.0
-ID (Amps)
20
1ms
1.0
10ms
10
100ms
DC
0.1
100
10s
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=140°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Jul 2011
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Page 4 of 5
AO6415
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
RL
V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Rev 2: Jul 2011
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 5 of 5
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