ON MMBD7000LT-1 Dual switching diode Datasheet

MMBD7000LT1G,
SMMBD7000LT1G,
MMBD7000LT3G,
SMMBD7000LT3G
Dual Switching Diode
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Features
 AEC−Q101 Qualified and PPAP Capable
 S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
SOT−23 (TO−236)
CASE 318
STYLE 11
 These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
1
ANODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Peak Forward Surge Current
3
CATHODE/ANODE
2
CATHODE
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
M5C MG
G
1
THERMAL CHARACTERISTICS
M5C
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1)TA = 25C
Derate above 25C
PD
225
mW
1.8
mW/C
RqJA
556
C/W
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
PD
300
mW
ORDERING INFORMATION
2.4
mW/C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
TA = 25C
Derate above 25C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Package
Shipping†
MMBD7000LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
SMMBD7000LT1G
SOT−23
(Pb−Free)
3,000 /
Tape & Reel
MMBD7000LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
SMMBD7000LT3G
SOT−23
(Pb−Free)
10,000 /
Tape & Reel
Device
RqJA
TJ, Tstg
C/W
417
−55 to +150
C
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
MMBD7000LT1/D
MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Symbol
Characteristic
Min
Max
100
−
−
−
−
1.0
3.0
100
0.55
0.67
0.75
0.7
0.82
1.1
−
4.0
−
1.5
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 mAdc)
V(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
(VR = 100 Vdc)
(VR = 50 Vdc, 125C)
Vdc
IR
IR2
IR3
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
Capacitance (VR = 0 V)
C
mAdc
Vdc
ns
pF
820W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
DUT
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
iR(REC) = 1.0 mA
IR
VR
INPUT SIGNAL
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G
CURVES APPLICABLE TO EACH DIODE
I F, FORWARD CURRENT (mA)
100
TA = 85C
TA = -40C
10
TA = 25C
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
40
50
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
10
I R , REVERSE CURRENT (m A)
TA = 150C
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
TA = 25C
0.001
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
C D , DIODE CAPACITANCE (pF)
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
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3
8.0
MMBD7000LT1G, SMMBD7000LT1G, MMBD7000LT3G, SMMBD7000LT3G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
L1
VIEW C
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
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4
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MMBD7000LT1/D