FAIRCHILD FJC1308

FJC1308
FJC1308
Audio Power Amplifier Applications
• Complement to FJC1963
• High Collector Current
• Low Collector-Emitter Saturation Voltage
SOT-89
1
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
-30
Units
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current (DC)
-3
A
PC
Power Dissipation(TC=25°C)
0.5
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=-50µA, IE=0
Min.
-30
Typ.
Max.
Units
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=-1mA, IB=0
-30
BVEBO
Emitter-Base Breakdown Voltage
IE=-50µA, IC=0
-6
ICEO
Collector Cut-off Current
VCE=-20V, VB=0
IEBO
Emitter Cut-off Current
VEB=-5V, IC=0
hFE
DC Current Gain
VCE=-2V, IC=-0.5A
VCE(sat)
Collector-Emitter Saturation Voltage
IC=-1.5, IB=-0.15A
-0.45
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=-1.5, IB=-0.15A
-1.5
V
80
V
V
-0.5
µA
-0.5
µA
390
hFE Classification
Classification
P
Q
R
hFE
80 ~ 180
120 ~ 270
180 ~ 390
Marking
FB P
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJC1308
Typical Characteristics
-1400
1000
VCE = - 2V
-1200
o
Ta = 125 C
IB = -6mA
hFE, DC CURRENT GAIN
IC [mA], COLLECTOR CURRENT
IB = -7mA
-1000
IB = -5mA
-800
IB = -4mA
-600
IB = -3mA
-400
IB = -2mA
-200
o
Ta = 25 C
o
Ta = - 40 C
100
IB = -1mA
10
-10m
0
0
-2
-4
-6
-8
-10
-12
-14
-16
-100m
V CE[V], COLLECTOR-EMITTER VOLTAGE
Figure 2. DC current Gain
-10
IC = 10 IB
-1
o
Ta = 125 C
-100m
o
Ta = 25 C
o
Ta = - 40 C
-10m
-1m
-1m
-10m
-100m
-1
IC = 10 IB
VBE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
-10
-1
o
Ta = - 40 C
-0.1
-1m
-10
o
o
Ta = 125 C
Ta = 25 C
-10m
IC [A], COLLECTOR CURRENT
-100m
-1
-10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
0.7
VCE = - 2V
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
o
125 C
o
o
25 C
- 40 C
-0.2
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
PC [W], COLLECTOR POWER DISSIPATION
-1.8
IC [A], COLLECTOR CURRENT
-10
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
-0.0
-0.0
-1
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
VBE [V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
25
50
75
100
125
150
175
o
Ta [ C], AMIBIENT TEMPERATURE
Figure 6. Power Derating
Rev. A1, August 2002
FJC1308
Package Dimensions
SOT-89
1.50 ±0.20
4.50 ±0.20
(0.40)
4.10
(1.10)
2.50
±0.20
C0.2
±0.20
(0.50)
1.65 ±0.10
0.50 ±0.10
0.40 ±0.10
0.40 +0.10
–0.05
1.50 TYP 1.50 TYP
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1