MC14511B BCD-To-Seven Segment Latch/Decoder/Driver The MC14511B BCD–to–seven segment latch/decoder/driver is constructed with complementary MOS (CMOS) enhancement mode devices and NPN bipolar output drivers in a single monolithic structure. The circuit provides the functions of a 4–bit storage latch, an 8421 BCD–to–seven segment decoder, and an output drive capability. Lamp test (LT), blanking (BI), and latch enable (LE) inputs are used to test the display, to turn–off or pulse modulate the brightness of the display, and to store a BCD code, respectively. It can be used with seven–segment light–emitting diodes (LED), incandescent, fluorescent, gas discharge, or liquid crystal readouts either directly or indirectly. Applications include instrument (e.g., counter, DVM, etc.) display driver, computer/calculator display driver, cockpit display driver, and various clock, watch, and timer uses. • • • • • • • • • • • • Low Logic Circuit Power Dissipation High–Current Sourcing Outputs (Up to 25 mA) Latch Storage of Code Blanking Input Lamp Test Provision Readout Blanking on all Illegal Input Combinations Lamp Intensity Modulation Capability Time Share (Multiplexing) Facility Supply Voltage Range = 3.0 V to 18 V Capable of Driving Two Low–power TTL Loads, One Low–power Schottky TTL Load or Two HTL Loads Over the Rated Temperature Range Chip Complexity: 216 FETs or 54 Equivalent Gates Triple Diode Protection on all Inputs MAXIMUM RATINGS (Voltages Referenced to VSS) (2.) Symbol Parameter Value Unit – 0.5 to +18.0 V VDD DC Supply Voltage Range Vin Input Voltage Range, All Inputs – 0.5 to VDD + 0.5 V I DC Current Drain per Input Pin 10 mA PD Power Dissipation, per Package (3.) 500 mW TA Operating Temperature Range – 55 to +125 Tstg Storage Temperature Range 16 PDIP–16 P SUFFIX CASE 648 MC14511BCP AWLYYWW 1 16 SOIC–16 D SUFFIX CASE 751B 14511B AWLYWW 1 16 14511B SOIC–16 DW SUFFIX CASE 751G AWLYYWW 1 16 SOEIAJ–16 F SUFFIX CASE 966 MC14511B AWLYWW 1 A = Assembly Location WL or L = Wafer Lot YY or Y = Year WW or W = Work Week ORDERING INFORMATION Shipping MC14511BCP PDIP–16 2000/Box °C MC14511BD SOIC–16 48/Rail – 65 to +150 °C MC14511BDW SOIC–16 47/Rail MC14511BDWR2 SOIC–16 1000/Tape & Reel MC14511BF SOEIAJ–16 See Note 1. MC14511BFEL SOEIAJ–16 See Note 1. Maximum Output Drive Current (Source) per Output 25 mA POHmax Maximum Continuous Output Power (Source) per Output (4.) 50 mA 2. Maximum Ratings are those values beyond which damage to the device may occur. 3. Temperature Derating: Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C 4. POHmax = IOH (VDD – VOH) March, 2000 – Rev. 3 MARKING DIAGRAMS Package IOHmax Semiconductor Components Industries, LLC, 2000 http://onsemi.com 1 Device 1. For ordering information on the EIAJ version of the SOIC packages, please contact your local ON Semiconductor representative. Publication Order Number: MC14511B/D MC14511B This device contains protection circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high–impedance circuit. A (Vin or Vout) VDD. destructive high current mode may occur if Vin and Vout are not constrained to the range VSS Due to the sourcing capability of this circuit, damage can occur to the device if VDD is applied, and the outputs are shorted to VSS and are at a logical 1 (See Maximum Ratings). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). v v PIN ASSIGNMENT B 1 16 VDD C 2 15 f LT 3 14 g BI 4 13 a LE 5 12 b D 6 11 c A 7 10 d VSS 8 9 e a f g e b c d DISPLAY 0 1 2 3 4 5 6 7 8 9 TRUTH TABLE LE BI LT X X 0 X 0 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 1 1 1 Inputs D C X X X X 0 0 0 0 0 0 0 0 0 1 0 1 0 1 0 1 1 0 1 0 1 0 1 0 1 1 1 1 1 1 1 1 X X B X X 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 X A X X 0 1 1 1 0 1 0 1 0 1 0 1 0 1 0 1 X a 1 0 1 0 1 1 0 1 0 1 1 1 0 0 0 0 0 0 b 1 0 1 1 1 1 1 0 0 1 1 1 0 0 0 0 0 0 c 1 0 1 1 1 1 1 1 1 1 1 1 0 0 0 0 0 0 d 1 0 1 0 1 1 0 1 1 0 1 0 0 0 0 0 0 0 * Outputs e f 1 1 0 0 1 1 0 0 0 0 0 0 0 1 0 1 1 1 0 0 1 1 0 1 0 0 0 0 0 0 0 0 0 0 0 0 X = Don’t Care * Depends upon the BCD code previously applied when LE = 0 http://onsemi.com 2 g 1 0 0 0 1 1 1 1 1 0 1 1 0 0 0 0 0 0 Display 8 Blank 0 1 2 3 4 5 6 7 8 9 Blank Blank Blank Blank Blank Blank * MC14511B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Characteristic Output Voltage Vin = VDD or 0 Symbol – 55_C 25_C 125_C VDD Vdc Min Max Min Typ (5.) Max Min Max Unit “0” Level VOL 5.0 10 15 — — — 0.05 0.05 0.05 — — — 0 0 0 0.05 0.05 0.05 — — — 0.05 0.05 0.05 Vdc “1” Level VOH 5.0 10 15 4.1 9.1 14.1 — — — 4.1 9.1 14.1 4.57 9.58 14.59 — — — 4.1 9.1 14.1 — — — Vdc Input Voltage # “0” Level (VO = 3.8 or 0.5 Vdc) (VO = 8.8 or 1.0 Vdc) (VO = 13.8 or 1.5 Vdc) VIL 5.0 10 15 — — — 1.5 3.0 4.0 — — — 2.25 4.50 6.75 1.5 3.0 4.0 — — — 1.5 3.0 4.0 “1” Level VIH 5.0 10 15 3.5 7.0 11 — — — 3.5 7.0 11 2.75 5.50 8.25 — — — 3.5 7.0 11 — — — 5.0 4.1 — 3.9 — 3.4 — — — — — — — 4.1 — 3.9 — 3.4 — 4.57 4.24 4.12 3.94 3.70 3.54 — — — — — — 4.1 — 3.5 — 3.0 — — — — — — — (IOH = 0 mA) (IOH = 5.0 mA) (IOH = 10 mA) (IOH = 15 mA) (IOH = 20 mA) (IOH = 25 mA) 10 9.1 — 9.0 — 8.6 — — — — — — — 9.1 — 9.0 — 8.6 — 9.58 9.26 9.17 9.04 8.90 8.70 — — — — — — 9.1 — 8.6 — 8.2 — — — — — — — Vdc (IOH = 0 mA) (IOH = 5.0 mA) (IOH = 10 mA) (IOH = 15 mA) (IOH = 20 mA) (IOH = 25 mA) 15 14.1 — 14 — 13.6 — — — — — — — 14.1 — 14 — 13.6 — 14.59 14.27 14.18 14.07 13.95 13.70 — — — — — — 14.1 — 13.6 — 13.2 — — — — — — — Vdc 5.0 10 15 0.64 1.6 4.2 — — — 0.51 1.3 3.4 0.88 2.25 8.8 — — — 0.36 0.9 2.4 — — — Vin = 0 or VDD (VO = 0.5 or 3.8 Vdc) (VO = 1.0 or 8.8 Vdc) (VO = 1.5 or 13.8 Vdc) Output Drive Voltage (IOH = 0 mA) (IOH = 5.0 mA) (IOH = 10 mA) (IOH = 15 mA) (IOH = 20 mA) (IOH = 25 mA) Output Drive Current (VOL = 0.4 V) (VOL = 0.5 V) (VOL = 1.5 V) Vdc Vdc VOH Source Vdc IOL Sink mAdc Input Current Iin 15 — ± 0.1 — ± 0.00001 ± 0.1 — ± 1.0 µAdc Input Capacitance Cin — — — — 5.0 7.5 — — pF Quiescent Current (Per Package) Vin = 0 or VDD, Iout = 0 µA IDD 5.0 10 15 — — — 5.0 10 20 — — — 0.005 0.010 0.015 5.0 10 20 — — — 150 300 600 µAdc Total Supply Current (6.) (7.) (Dynamic plus Quiescent, Per Package) (CL = 50 pF on all outputs, all buffers switching) IT 5.0 10 15 IT = (1.9 µA/kHz) f + IDD IT = (3.8 µA/kHz) f + IDD IT = (5.7 µA/kHz) f + IDD 5. Noise immunity specified for worst–case input combination. Noise Margin for both “1” and “0” level = 1.0 Vdc min @ VDD = 5.0 Vdc 2.0 Vdc min @ VDD = 10 Vdc 2.5 Vdc min @ VDD = 15 Vdc 6. The formulas given are for the typical characteristics only at 25_C. 7. To calculate total supply current at loads other than 50 pF: IT(CL) = IT(50 pF) + 3.5 x 10–3 (CL – 50) VDDf where: IT is in µA (per package), CL in pF, VDD in Vdc, and f in kHz is input frequency. http://onsemi.com 3 µAdc MC14511B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS (8.) (CL = 50 pF, TA = 25_C) Characteristic Symbol VDD Vdc Min Typ Max 5.0 10 15 — — — 40 30 25 80 60 50 5.0 10 15 — — — 125 75 65 250 150 130 5.0 10 15 — — — 640 250 175 1280 500 350 5.0 10 15 — — — 720 290 200 1440 580 400 5.0 I0 15 — — — 600 200 150 750 300 220 5.0 10 15 — — — 485 200 160 970 400 320 5.0 10 15 — — — 313 125 90 625 250 180 Unit Output Rise Time tTLH = (0.40 ns/pF) CL + 20 ns tTLH = (0.25 ns/pF) CL + 17.5 ns tTLH = (0.20 ns/pF) CL + 15 ns tTLH Output Fall Time tTHL = (1.5 ns/pF) CL + 50 ns tTHL = (0.75 ns/pF) CL + 37.5 ns tTHL = (0.55 ns/pF) CL + 37.5 ns tTHL Data Propagation Delay Time tPLH = (0.40 ns/pF) CL + 620 ns tPLH = (0.25 ns/pF) CL + 237.5 ns tPLH = (0.20 ns/pF) CL + 165 ns tPLH tPHL = (1.3 ns/pF) CL + 655 ns tPHL = (0.60 ns/pF) CL + 260 ns tPHL = (0.35 ns/pF) CL + 182.5 ns tPHL Blank Propagation Delay Time tPLH = (0.30 ns/pF) CL + 585 ns tPLH = (0.25 ns/pF) CL + 187.5 ns tPLH = (0.15 ns/pF) CL + 142.5 ns tPLH tPHL = (0.85 ns/pF) CL + 442.5 ns tPHL = (0.45 ns/pF) CL + 177.5 ns tPHL = (0.35 ns/pF) CL + 142.5 ns tPHL Lamp Test Propagation Delay Time tPLH = (0.45 ns/pF) CL + 290.5 ns tPLH = (0.25 ns/pF) CL + 112.5 ns tPLH = (0.20 ns/pF) CL + 80 ns tPLH tPHL = (1.3 ns/pF) CL + 248 ns tPHL = (0.45 ns/pF) CL + 102.5 ns tPHL = (0.35 ns/pF) CL + 72.5 ns tPHL 5.0 10 15 — — — 313 125 90 625 250 180 Setup Time tsu 5.0 10 15 100 40 30 — — — — — — ns Hold Time th 5.0 10 15 60 40 30 — — — — — — ns tWL 5.0 10 15 520 220 130 260 110 65 — — — ns Latch Enable Pulse Width ns ns ns ns ns 8. The formulas given are for the typical characteristics only. http://onsemi.com 4 MC14511B Input LE low, and Inputs D, BI and LT high. f in respect to a system clock. All outputs connected to respective CL loads. 20 ns 20 ns 90% 50% 1 2f A, B, AND C VDD 10% VSS 50% DUTY CYCLE VOH 50% ANY OUTPUT VOL Figure 1. Dynamic Power Dissipation Signal Waveforms 20 ns 20 ns VDD 90% 50% 10% INPUT C VSS tPHL tPLH VOH 90% 50% OUTPUT g 10% VOL tTHL tTLH (a) Inputs D and LE low, and Inputs A, B, BI and LT high. 20 ns LE VDD 90% 50% 10% th VSS tsu VDD INPUT C 50% VSS VOH OUTPUT g VOL (b) Input D low, Inputs A, B, BI and LT high. 20 ns 20 ns LE VDD 90% 50% 10% tWL (c) Data DCBA strobed into latches. Figure 2. Dynamic Signal Waveforms http://onsemi.com 5 VSS MC14511B CONNECTIONS TO VARIOUS DISPLAY READOUTS LIGHT EMITTING DIODE (LED) READOUT VDD VDD COMMON ANODE LED COMMON CATHODE LED ≈ 1.7 V ≈ 1.7 V VSS VSS INCANDESCENT READOUT VDD FLUORESCENT READOUT VDD VDD ** DIRECT (LOW BRIGHTNESS) FILAMENT SUPPLY VSS VSS VSS OR APPROPRIATE VOLTAGE BELOW VSS. (CAUTION: Maximum working voltage = 18.0 V) GAS DISCHARGE READOUT VDD LIQUID CRYSTAL (LCD) READOUT APPROPRIATE VOLTAGE EXCITATION (SQUARE WAVE, VSS TO VDD) VDD 1/4 OF MC14070B VSS VSS ** A filament pre–warm resistor is recommended to reduce filament thermal shock and increase the effective cold resistance of the filament. Direct dc drive of LCD’s not recommended for life of LCD readouts. http://onsemi.com 6 MC14511B LOGIC DIAGRAM BI 4 13 a A 7 12 b 11 c B 1 10 d 9 e 15 f C 2 14 g LT 3 D 6 LE 5 VDD = PIN 16 VSS = PIN 8 http://onsemi.com 7 MC14511B PACKAGE DIMENSIONS PDIP–16 P SUFFIX PLASTIC DIP PACKAGE CASE 648–08 ISSUE R –A– 16 9 1 8 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. B F C L S –T– SEATING PLANE K H G D M J 16 PL 0.25 (0.010) M T A M http://onsemi.com 8 DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 MC14511B PACKAGE DIMENSIONS SOIC–16 D SUFFIX PLASTIC SOIC PACKAGE CASE 751B–05 ISSUE J –A– 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 –B– 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C –T– SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S http://onsemi.com 9 DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 MC14511B PACKAGE DIMENSIONS SOIC–16 DW SUFFIX PLASTIC SOIC PACKAGE CASE 751G–03 ISSUE B A D 9 1 8 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. h X 45 _ E 0.25 16X M T A S B S 14X e L A 0.25 B B A1 H 8X M B M 16 q SEATING PLANE T DIM A A1 B C D E e H h L q C http://onsemi.com 10 MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 10.15 10.45 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.50 0.90 0_ 7_ MC14511B PACKAGE DIMENSIONS SOEIAJ–16 F SUFFIX PLASTIC EIAJ SOIC PACKAGE CASE 966–01 ISSUE O 16 LE 9 Q1 M_ E HE 1 L 8 DETAIL P Z D e VIEW P A A1 b 0.13 (0.005) c M 0.10 (0.004) http://onsemi.com 11 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.018). DIM A A1 b c D E e HE L LE M Q1 Z MILLIMETERS MIN MAX ––– 2.05 0.05 0.20 0.35 0.50 0.18 0.27 9.90 10.50 5.10 5.45 1.27 BSC 7.40 8.20 0.50 0.85 1.10 1.50 10 _ 0_ 0.70 0.90 ––– 0.78 INCHES MIN MAX ––– 0.081 0.002 0.008 0.014 0.020 0.007 0.011 0.390 0.413 0.201 0.215 0.050 BSC 0.291 0.323 0.020 0.033 0.043 0.059 10 _ 0_ 0.028 0.035 ––– 0.031 MC14511B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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