ON MUN5135DW1T1 Dual bias resistor transistor Datasheet

MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
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The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor
and a base−emitter resistor. These digital transistors are designed to
replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series, two BRT devices are housed in
the SOT−363 package which is ideal for low−power surface mount
applications where board space is at a premium.
(3)
R1
(1)
R2
Q1
Q2
R2
Features
•
•
•
•
(2)
(4)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Pb−Free Packages are Available
R1
(5)
(6)
1
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
−50
Vdc
Collector-Emitter Voltage
VCEO
−50
Vdc
IC
−100
mAdc
Rating
Collector Current
SOT−363
CASE 419B
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
TA = 25°C
Derate above 25°C
MARKING DIAGRAM
Symbol
Max
Unit
PD
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
RqJA
670 (Note 1)
490 (Note 2)
°C/W
Symbol
Max
Unit
PD
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
RqJA
493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance,
Junction-to-Lead
RqJL
188 (Note 1)
208 (Note 2)
°C/W
TJ, Tstg
−55 to +150
°C
September, 2005 − Rev. 6
1
xx
M
G
= Device Code (Refer to page 2)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
DEVICE MARKING INFORMATION
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
© Semiconductor Components Industries, LLC, 2005
xx M G
G
mW/°C
Thermal Resistance,
Junction-to-Ambient
Junction and Storage Temperature Range
6
1
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping †
MUN5111DW1T1
SOT−363
0A
10
10
3000/Tape & Reel
MUN5111DW1T1G
SOT−363
(Pb−Free)
0A
10
10
3000/Tape & Reel
MUN5112DW1T1
SOT−363
0B
22
22
3000/Tape & Reel
MUN5112DW1T1G
SOT−363
(Pb−Free)
0B
22
22
3000/Tape & Reel
MUN5113DW1T1
SOT−363
0C
47
47
3000/Tape & Reel
MUN5113DW1T1G
SOT−363
(Pb−Free)
0C
47
47
3000/Tape & Reel
MUN5114DW1T1
SOT−363
0D
10
47
3000/Tape & Reel
MUN5114DW1T1G
SOT−363
(Pb−Free)
0D
10
47
3000/Tape & Reel
MUN5115DW1T1
SOT−363
0E
10
∞
3000/Tape & Reel
MUN5115DW1T1G
SOT−363
(Pb−Free)
0E
10
∞
3000/Tape & Reel
MUN5116DW1T1
SOT−363
0F
4.7
∞
3000/Tape & Reel
MUN5116DW1T1G
SOT−363
(Pb−Free)
0F
4.7
∞
3000/Tape & Reel
MUN5130DW1T1
SOT−363
0G
1.0
1.0
3000/Tape & Reel
MUN5130DW1T1G
SOT−363
(Pb−Free)
0G
1.0
1.0
3000/Tape & Reel
MUN5131DW1T1
SOT−363
0H
2.2
2.2
3000/Tape & Reel
MUN5131DW1T1G
SOT−363
(Pb−Free)
0H
2.2
2.2
3000/Tape & Reel
MUN5132DW1T1
SOT−363
0J
4.7
4.7
3000/Tape & Reel
MUN5132DW1T1G
SOT−363
(Pb−Free)
0J
4.7
4.7
3000/Tape & Reel
MUN5133DW1T1
SOT−363
0K
4.7
47
3000/Tape & Reel
MUN5133DW1T1G
SOT−363
(Pb−Free)
0K
4.7
47
3000/Tape & Reel
MUN5134DW1T1
SOT−363
0L
22
47
3000/Tape & Reel
MUN5134DW1T1G
SOT−363
(Pb−Free)
0L
22
47
3000/Tape & Reel
MUN5135DW1T1
SOT−363
0M
2.2
47
3000/Tape & Reel
MUN5135DW1T1G
SOT−363
(Pb−Free)
0M
2.2
47
3000/Tape & Reel
MUN5136DW1T1
SOT−363
0N
100
100
3000/Tape & Reel
MUN5136DW1T1G
SOT−363
(Pb−Free)
0N
100
100
3000/Tape & Reel
MUN5137DW1T1
SOT−363
0P
47
22
3000/Tape & Reel
MUN5137DW1T1G
SOT−363
(Pb−Free)
0P
47
22
3000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Cutoff Current (VCB = −50 V, IE = 0)
ICBO
−
−
−100
nAdc
Collector-Emitter Cutoff Current (VCE = −50 V, IB = 0)
ICEO
−
−
−500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
mAdc
Collector-Base Breakdown Voltage (IC = −10 mA, IE = 0)
V(BR)CBO
−50
−
−
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (IC = −2.0 mA, IB = 0)
V(BR)CEO
−50
−
−
Vdc
VCE(sat)
−
−
−0.25
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−4.9
−
−
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
(VEB = −6.0 V, IC = 0)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
ON CHARACTERISTICS (Note 3)
Collector-Emitter Saturation Voltage (IC = −10 mA, IE = −0.3 mA)
(IC = −10 mA, IB = −5 mA)
MUN5130DW1T1/MUN5131DW1T1
(IC = −10 mA, IB = −1 mA)
MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
DC Current Gain
(VCE = −10 V, IC = −5.0 mA)
Output Voltage (on)
(VCC = −5.0 V, VB = −2.5 V, RL = 1.0 kW)
(VCC = −5.0 V,
(VCC = −5.0 V,
(VCC = −5.0 V,
VB = −3.5 V, RL = 1.0 kW)
VB = −5.5 V, RL = 1.0 kW)
VB = −4.0 V, RL = 1.0 kW)
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
VOL
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5113DW1T1
MUN5136DW1T1
MUN5137DW1T1
Output Voltage (off) (VCC = −5.0 V, VB = −0.5 V, RL = 1.0 kW)
(VCC = −5.0 V, VB = −0.05 V, RL = 1.0 kW)
MUN5130DW1T1
(VCC = −5.0 V, VB = − 0.25 V, RL = 1.0 kW)
MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
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3
VOH
Vdc
Vdc
MUN5111DW1T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
ON CHARACTERISTICS (Note 4) (Continued)
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
Resistor Ratio
MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
R1/R2
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ALL MUN5111DW1T1 SERIES DEVICES
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
−50
RqJA = 490°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve − ALL DEVICES
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4
150
MUN5111DW1T1 Series
1
1000
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1
TA=−25°C
0.1
25°C
75°C
0.01
0
20
40
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
100
10
50
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
25°C
75°C
TA=−25°C
10
1
0.1
0.01
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
0.001
50
100
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
8
9
Figure 5. Output Current versus Input Voltage
Figure 4. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
3
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 6. Input Voltage versus Output Current
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5
50
10
MUN5111DW1T1 Series
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
20
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
1
10
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA=−25°C
10
1
0.1
0.01
0.001
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
4
0
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25°C
75°C
1
0
10
8
9
10
Figure 10. Output Current versus Input Voltage
TA=−25°C
0.1
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
40
1000
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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6
MUN5111DW1T1 Series
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
VCE = 10 V
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
1
0.1
0.01
0.001
50
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA=−25°C
25°C
75°C
1
0.1
0
10
8
9
10
Figure 15. Output Current versus Input Voltage
100
10
25°C
TA=75°C
10
Figure 14. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
C ob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
20
30
IC, COLLECTOR CURRENT (mA)
40
Figure 16. Input Voltage versus Output Current
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7
50
MUN5111DW1T1 Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
TA=75°C
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
10
VO = 5 V
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
TA=−25°C
75°C
1
0
10
8
10
Figure 20. Output Current versus Input Voltage
10
0.1
25°C
−25°C
1
50
Figure 19. Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 21. Input Voltage versus Output Current
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8
MUN5111DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
TA = −25°C
100
10
1
50
25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 22. VCE(sat) versus IC
100
Figure 23. DC Current Gain
12
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 24. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
1
25°C
75°C
0.1
0
9
10
Figure 25. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 26. Input Voltage versus Output Current
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9
50
MUN5111DW1T1 Series
1
1000
IC/IB = 10
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
25°C
10
1
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 27. VCE(sat) versus IC
100
Figure 28. DC Current Gain
12
100
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 29. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
25°C
75°C
VO = 0.2 V
0.1
0
9
10
Figure 30. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
VCE = 10 V
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 31. Input Voltage versus Output Current
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10
50
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5130DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
10
25°C
TA = −25°C
1
30
1
10
IC, COLLECTOR CURRENT (mA)
Figure 32. VCE(sat) versus IC
100
Figure 33. DC Current Gain
IC, COLLECTOR CURRENT (mA)
TBD
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
1
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 34. Output Capacitance
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 35. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 36. Input Voltage versus Output Current
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11
25
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5131DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
0
5
10
15
20
25
IC, COLLECTOR CURRENT (mA)
100
75°C
TA = −25°C
1
30
25°C
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 37. VCE(sat) versus IC
Figure 38. DC Current Gain
12
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
lE = 0 V
TA = 25°C
10
8
6
4
2
0
10 75°C
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 39. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 40. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 41. Input Voltage versus Output Current
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12
25
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
25°C
10
TA = −25°C
1
50
1
10
IC, COLLECTOR CURRENT (mA)
Figure 42. VCE(sat) versus IC
Figure 43. DC Current Gain
12
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
10
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 44. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
25°C
1
75°C
VO = 0.2 V
0.1
0
9
10
Figure 45. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 46. Input Voltage versus Output Current
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13
50
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 47. VCE(sat) versus IC
100
Figure 48. DC Current Gain
8
100
6
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
7
5
4
3
2
1
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 49. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 50. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 51. Input Voltage versus Output Current
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14
50
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
75°C
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 52. VCE(sat) versus IC
100
Figure 53. DC Current Gain
3.5
100
2.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
3
2
1.5
1
0.5
0
75°C
10
25°C
1
0.1
TA = −25°C
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 54. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
10
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 55. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 56. Input Voltage versus Output Current
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15
50
MUN5111DW1T1 Series
1
1000
VCE = 10 V
IC/IB = 10
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1
75°C
0.1
−25°C
25°C
0.01
0.001
30
20
40
10
IC, COLLECTOR CURRENT (mA)
0
75°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 57. VCE(sat) versus IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
8
6
4
2
0
75°C
10
25°C
1
TA = −25°C
0.1
0.01
VO = 5 V
0.001
0
5
10 15 20 25 30 35 40 45
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0
Figure 59. Output Capacitance
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
TA = −25°C
1
75°C
25°C
VO = 0.2 V
0.1
0
9
10
Figure 60. Output Current versus Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 58. DC Current Gain
12
10
25°C
10
1
50
TA = −25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 61. Input Voltage versus Output Current
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16
50
MUN5111DW1T1 Series
1
0.1
−25°C
75°C
25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1
1000
75°C
TA = −25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 62. VCE(sat) versus IC
Figure 63. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
1
V
VO
O == 55VV
0
1
2
3
4
TA = −25°C
10
VO = 0.2 V
75°C
0
2
6
7
8
9
10
Figure 65. Output Current versus Input Voltage
100
1
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 64. Output Capacitance
25°C
75°C
10
0.1
0
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 66. Input Voltage versus Output Current
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17
20
MUN5111DW1T1 Series
hFE, DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 67. VCE(sat) versus IC
Figure 68. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
11
Figure 70. Output Current versus Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 69. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
25
Figure 71. Input Voltage versus Output Current
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18
MUN5111DW1T1 Series
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
1
2
3
HE
DIM
A
A1
A3
b
C
D
E
e
L
HE
−E−
b 6 PL
0.2 (0.008)
M
E
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
A3
C
A
A1
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
EMITTER 2
BASE 2
COLLECTOR 1
EMITTER 1
BASE 1
COLLECTOR 2
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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19
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
MUN5111DW1T1 Series
ON Semiconductor and
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MUN5111DW1T1/D