AP3N3R3MT
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
▼ 100% Rg & UIS Test
BVDSS
RDS(ON)
D
▼ Simple Drive Requirement
30V
3.3mΩ
▼ Ultra Low On-resistance
G
▼ RoHS Compliant & Halogen-Free
D
D
S
D
Description
AP3N3R3 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The PMPAK ® 5x6 package is special for DC-DC converters
application and the foot print is compatible with SO-8 with backside
heat sink and lower profile.
D
S
S
S
G
®
PMPAK 5x6
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
4
Drain Current, VGS @ 10V (Silicon Limited)
Drain Current, VGS @ 10V
4
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
PD@TA=25℃
.
Parameter
Total Power Dissipation
3
5
Rating
Units
30
V
+20
V
95
A
60
A
30
A
24
A
240
A
50
W
5
W
45
mJ
EAS
Single Pulse Avalanche Energy
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
Value
Unit
2.5
℃/W
25
℃/W
1
201708301
AP3N3R3MT
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=20A
-
-
3.3
mΩ
VGS=4.5V, ID=12A
-
-
5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=20A
-
84
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=20A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=15V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
11
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
18
-
ns
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
43
-
ns
tf
Fall Time
VGS=10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
2550 4080
pF
Coss
Output Capacitance
VDS=15V
Crss
Rg
-
475
-
pF
Reverse Transfer Capacitance
.
f=1.0MHz
-
280
-
pF
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
IS=20A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=20A, VGS=0V,
-
14
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
4.5
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 60 C/W at steady state.
4.Package limitation current is 60A .
5.Starting Tj=25oC , VDD=30V , L=0.1mH , RG=25Ω, VGS=10V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3N3R3MT
160
250
T C =25 o C
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
ID , Drain Current (A)
200
T C = 150 o C
V G = 4.0V
150
100
10V
7.0V
6.0V
5.0V
V G = 4.0V
120
80
40
50
0
0
0
2
4
6
8
0
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
2.0
3.6
I D =20A
V G =10V
I D = 12 A
o
T C =25 C
3.2
1.6
2.8
.
Normalized RDS(ON)
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
2.4
1.2
0.8
2
0.4
2
4
6
8
10
-100
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
100
2
I D = 250uA
Normalized VGS(th)
1.6
IS(A)
10
T j =150 o C
T j =25 o C
1.2
0.8
1
0.4
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
1.4
-100
-50
0
50
100
150
o
T j ,Junction Temperature ( C)
Fig 6. Transfer Characteristics
Reverse Diode
3
AP3N3R3MT
10
f=1.0MHz
5000
8
4000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 20 A
V DS =15V
6
3000
C iss
4
2000
2
1000
C oss
C rss
0
0
0
10
20
30
40
50
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
33
37
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this
area limited by
RDS(ON)
10
100us
1
1ms
10ms
DC
T C =25 o C
Single Pulse
.
Normalized Thermal Response (Rthjc)
1000
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
Single Pulse
0.1
0.01
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
160
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
100
80
Limited by package
60
40
120
80
T j =150 o C
40
o
T j =25 C
20
T j = -55 o C
0
0
25
50
75
100
T C , Case Temperature (
125
o
C)
Fig 11. Drain Current v.s. Case
Temperature
150
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP3N3R3MT
20
60
T j =25 o C
50
PD, Power Dissipation(W)
RDS(ON) (mΩ)
16
12
8
4.5V
V GS =10V
4
40
30
20
10
0
0
0
20
40
60
80
100
0
120
I D , Drain Current (A)
50
100
150
o
T C , Case Temperature( C)
Fig 13. Typ. Drain-Source on State
Resistance
Fig 14. Total Power Dissipation
.
5
AP3N3R3MT
MARKING INFORMATION
Part Number
3N3R3
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
6