MOTOROLA BUL45F Power transistor 5.0 amperes 700 volts 35 and 75 watt Datasheet

Order this document
by BUL45/D
SEMICONDUCTOR TECHNICAL DATA
 High Voltage SWITCHMODE
t Series
*Motorola Preferred Device
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
• Improved Efficiency Due to:
— Low Base Drive Requirements (High and Flat DC Current Gain hFE)
— Low Power Losses (On–State and Switching Operations)
— Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ)
— Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A
• Full Characterization at 125°C
• Tight Parametric Distributions Consistent Lot–to–Lot
• BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
MAXIMUM RATINGS
Rating
Symbol
BUL45
BUL45F
Unit
Collector–Emitter Sustaining Voltage
VCEO
400
Vdc
Collector–Emitter Breakdown Voltage
VCES
700
Vdc
Emitter–Base Voltage
VEBO
9.0
Vdc
IC
ICM
5.0
10
Adc
Collector Current — Continuous
— Peak(1)
Base Current
IB
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
Total Device Dissipation
Derate above 25°C
(TC = 25°C)
2.0
Adc
VISOL
—
—
—
4500
3500
1500
Volts
PD
75
0.6
35
0.28
Watts
W/°C
TJ, Tstg
– 65 to 150
°C
Symbol
MJE18006 MJF18006
Unit
Operating and Storage Temperature
THERMAL CHARACTERISTICS
Rating
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.65
62.5
BUL45
CASE 221A–06
TO–220AB
3.55
62.5
°C/W
BUL45F
CASE 221D–02
ISOLATED TO–220 TYPE
UL RECOGNIZED
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
400
—
—
Vdc
ICEO
—
—
100
µAdc
ICES
—
—
—
—
10
100
µAdc
IEBO
—
—
100
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.
(2) Proper strike and creepage distance must be provided.
µAdc
(continued)
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Base–Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc)
(IC = 2.0 Adc, IB = 0.4 Adc)
VBE(sat)
—
—
0.84
0.89
1.2
1.25
Vdc
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
VCE(sat)
—
—
0.175
0.150
0.25
—
—
—
0.25
0.275
0.4
—
hFE
14
—
7.0
5.0
10
—
32
14
12
22
34
—
—
—
—
—
fT
—
12
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
50
75
pF
Input Capacitance (VEB = 8.0 Vdc)
Cib
—
920
1200
pF
(TC = 125°C)
—
—
1.75
4.4
—
—
(TC = 125°C)
—
—
0.5
1.0
—
—
(TC = 125°C)
—
—
1.85
6.0
—
—
(TC = 125°C)
—
—
0.5
1.0
—
—
ton
—
—
75
120
110
—
ns
toff
—
—
2.8
3.5
3.5
—
µs
ON CHARACTERISTICS
(TC = 125°C)
Collector–Emitter Saturation Voltage
(IC = 2.0 Adc, IB = 0.4 Adc)
Vdc
VCE(sat)
(TC = 125°C)
DC Current Gain (IC = 0.3 Adc, VCE = 5.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc)
(TC = 125°C)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Dynamic Saturation Voltage:
Determined 1.0 µs and
3.0 µs respectively after
rising IB1 reaches 90%
of final IB1
(see Figure 18)
(IC = 1.0 Adc
IB1 = 100 mAdc
VCC = 300 V)
(IC = 2.0 Adc
IB1 = 400 mAdc
VCC = 300 V)
1.0 µs
3.0 µs
1.0 µs
3.0 µs
VCE
(Dyn sat)
Vdc
SWITCHING CHARACTERISTICS: Resistive Load
Turn–On Time
Turn–Off Time
(IC = 2.0 Adc, IB1 = IB2 = 0.4 Adc
Pulse Width = 20 µs,
(TC = 125°C)
Duty Cycle < 20%
VCC = 300 V)
(TC = 125°C)
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 µH, Vclamp = 300 Vdc)
Fall Time
(IC = 2.0 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc)
tfi
70
—
—
200
170
—
ns
tsi
2.6
—
—
4.2
3.8
—
µs
tc
—
—
230
400
350
—
ns
tfi
—
—
110
100
150
—
ns
tsi
—
—
1.1
1.5
1.7
—
µs
tc
—
—
170
170
250
—
ns
tfi
—
80
120
ns
tsi
—
0.6
0.9
µs
tc
—
175
300
ns
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 1.0 Adc, IB1 = 100 mAdc
IB2 = 0.5 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
Fall Time
(IC = 2.0 Adc, IB1 = 250 mAdc
IB2 = 2.0 Adc)
(TC = 125°C)
Storage Time
(TC = 125°C)
Crossover Time
(TC = 125°C)
2
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
100
100
VCE = 1 V
TJ = 25°C
TJ = 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
TJ = – 20°C
10
1
0.01
VCE = 5 V
TJ = 25°C
1.00
0.10
TJ = – 20°C
10
1
0.01
10.00
0.10
1.00
10.00
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain at @ 5 Volts
2.0
10
1.5
1 A 1.5 2 A
A
1.0
3A
4A 5A
VCE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
TJ = 25°C
6A
0.5
1.0
IC/IB = 10
0.1
TJ = 25°C
TJ = 125°C
IC/IB = 5
IC = 0.5 A
0
0.01
0.10
1.00
0.01
0.01
10.00
1.00
10.00
IB, BASE CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Region
Figure 4. Collector–Emitter Saturation Voltage
1.1
10000
C, CAPACITANCE (pF)
1.0
VBE , VOLTAGE (VOLTS)
0.10
0.9
0.8
0.7
TJ = 25°C
0.6
Cib
1000
Cob
100
10
TJ = 125°C
IC/IB = 10
IC/IB = 5
0.5
0.4
0.01
TJ = 25°C
f = 1 MHz
0.10
1.00
10.00
1
1
10
100
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Base–Emitter Saturation Region
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
1000
3
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
1200
3000
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
1000
TJ = 25°C
TJ = 125°C
2500
2000
t, TIME (ns)
t, TIME (ns)
800
IB(off) = IC/2
VCC = 300 V
PW = 20 µs
TJ = 25°C
TJ = 125°C
IC/IB = 5
IC/IB = 10
600
400
IC/IB = 10
1500
1000
200
500
IC/IB = 5
0
0
0
1
2
3
5
4
7
6
8
0
3
4
5
6
7
Figure 7. Resistive Switching, ton
Figure 8. Resistive Switching, toff
8
3500
IC/IB = 5
2500
VZ = 300 V
VCC = 15 V
IB(off) = IC/2
LC = 200 µH
2000
1500
1000
TJ = 25°C
TJ = 125°C
500
0
1
IB(off) = IC/2
LC = 200 µH
VZ = 300 V
VCC = 15 V
TJ = 25°C
TJ = 125°C
3000
t si , STORAGE TIME (ns)
3000
t, TIME (ns)
2
IC, COLLECTOR CURRENT (AMPS)
3500
0
1
IC, COLLECTOR CURRENT (AMPS)
2500
IC = 1 A
2000
1500
1000
IC/IB = 10
3
2
4
500
5
IC = 2 A
3
4
5
6
7
8
9
10
11
13
12
14
IC, COLLECTOR CURRENT (AMPS)
hFE, FORCED GAIN
Figure 9. Inductive Storage Time, tsi
Figure 10. Inductive Storage Time, tsi(hFE)
300
15
200
250
tc
tc
150
t, TIME (ns)
t, TIME (ns)
200
150
100
100
VCC = 15 V
IB(off) = IC/2
LC = 200 µH
VZ = 300 V
50
0
0
4
1
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
50
tfi
2
TJ = 25°C
TJ = 125°C
3
4
5
0
0
1
tfi
2
TJ = 25°C
TJ = 125°C
3
4
5
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, tc & tfi, IC/IB = 5
Figure 12. Inductive Switching, tc & tfi, IC/IB = 10
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
150
300
140
t fi , FALL TIME (ns)
130
IC = 1 A
120
t c , CROSSOVER TIME (ns)
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
TJ = 25°C
TJ = 125°C
110
100
90
70
250
IC = 1 A
200
150
100
IC = 2 A
80
TJ = 25°C
TJ = 125°C
50
3
4
5
6
7
8
9
10
11
12
13
15
14
VCC = 15 V
VZ = 300 V
IB(off) = IC/2
LC = 200 µH
3
4
5
6
7
IC = 2 A
8
9
10
11
12
hFE, FORCED GAIN
hFE, FORCED GAIN
Figure 13. Inductive Fall Time, tfi(hFE)
Figure 14. Crossover Time
13
14
15
GUARANTEED SAFE OPERATING AREA INFORMATION
6
100
TC ≤ 125°C
IC/IB ≥ 4
LC = 500 µH
10
5 ms
50 µs
1 ms
10 µs
1 µs
EXTENDED
SOA
1.0
DC (BUL45F)
0.1
0.01
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 15. Forward Bias Safe Operating Area
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
0.6
0.4
THERMAL DERATING
0.2
0
20
40
60
80
100
120
140
TC, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
Motorola Bipolar Power Transistor Device Data
5
4
3
2
–5 V
1
0
300
VBE(off) = 0 V
–1.5 V
400
600
700
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
800
Figure 16. Reverse Bias Switching Safe Operating Area
1.0
0.8
I C , COLLECTOR CURRENT (AMPS)
I C , COLLECTOR CURRENT (AMPS)
DC (BUL45)
160
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 15 is based on TC
= 25°C; TJ(pk) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable
current at the voltages shown in Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figures 20
and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse–biased. The safe level is specified as a reverse–biased
safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode.
5
10
5
4
VCE
dyn 1 µs
3
8
2
VOLTS
90% IC
tfi
IC
9
tsi
7
dyn 3 µs
1
6
0
5
tc
VCLAMP
10% VCLAMP
IB
90% IB1
10% IC
4
–1
90% IB
–2
3
1 µs
–3
–4
2
3 µs
IB
–5
0
1
0
1
2
3
4
TIME
5
6
7
0
8
Figure 18. Dynamic Saturation Voltage Measurements
1
2
3
4
TIME
5
6
7
8
Figure 19. Inductive Switching Measurements
+15 V
1 µF
150 Ω
3W
MTP8P10
100 Ω
3W
IC PEAK
100 µF
VCE PEAK
VCE
MTP8P10
RB1
MPF930
IB1
MUR105
Iout
MPF930
+10 V
IB
A
IB2
50 Ω
RB2
MJE210
COMMON
500 µF
150 Ω
3W
MTP12N10
1 µF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 VOLTS
IC(pk) = 100 mA
–Voff
INDUCTIVE SWITCHING
L = 200 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED FOR
DESIRED IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 VOLTS
RB1 SELECTED
FOR DESIRED IB1
Table 1. Inductive Load Switching Drive Circuit
6
Motorola Bipolar Power Transistor Device Data
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TYPICAL THERMAL RESPONSE
1.00
D = 0.5
0.2
0.10
0.1
P(pk)
0.05
t1
t2
0.02
SINGLE PULSE
0.01
0.01
DUTY CYCLE, D = t1/t2
0.10
1.00
RθJC(t) = r(t) RθJC
RθJC = 2.5°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
10.00
100.00
1000.00
t, TIME (ms)
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 20. Typical Thermal Response (ZθJC(t)) for BUL45
1.00
D = 0.5
0.2
0.10
P(pk)
0.1
t1
t2
0.05
0.02
0.01
0.01
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.10
1.00
10.00
100.00
RθJC(t) = r(t) RθJC
RθJC = 5.0°C/W MAX
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1000.00
10000.00
100000.00
t, TIME (ms)
Figure 21. Typical Thermal Response (ZθJC(t)) for BUL45F
Motorola Bipolar Power Transistor Device Data
7
demonstrate how well these devices operate. The circuit and
detailed component list are provided below.
The BUL45/BUL45F Bipolar Power Transistors were
specially designed for use in electronic lamp ballasts. A
circuit designed by Motorola applications was built to
COLLECTOR CURRENT SENSE
(USE EXTERNAL STRAPS)
22 µF
MUR150
385 V
Q1
47 Ω
1Ω
470 kΩ
D9
C5
D5
D3
C1
D10
IC
T1A
400 V
0.1 µF
1000 V
15 µF
C4
TUBE
T1B
D8
FUSE
D1
D7
IC
0.1 µF
D6
Q2
C3 1000 V
47 Ω
MUR150
C2
CTN
1N4007
L
D2
0.1 µF
D4
100 V
AC LINE
220 V
10 nF C6
400 V
5.5 mH
1N5761
1Ω
Components Lists
Q1
D1
D2
D3
D5
D7
CTN
L
=
=
=
=
=
=
=
=
T1 =
Q2 = BUL45 Transistor
1N4007 Rectifier
1N5761 Rectifier
D4 = MUR150
D6 = MUR105
D8 = D9 = D10 = 1N400
47 Ω @ 25°C
RM10 core, A1 = 400, B51 (LCC) 75 turns,
wire ∅ = 0.6 mm
FT10 toroid, T4A (LCC)
Primary: 4 turns
Secondaries: T1A: 4 turns
Secondaries: T1B: 4 turns
All resistors are 1/4 Watt, ±5%
R1 = 470 kΩ
R2 = R3 = 47 Ω
R4 = R5 = 1 Ω (these resistors are optional, and
might be replaced by a short circuit)
C1 = 22 µF/385 V
C2 = 0.1 µF
C3 = 10 nF/1000 V
C4 = 15 nF/1000 V
C5 = C6 = 0.1 µF/400 V
NOTES:
1. Since this design does not include the line input filter, it cannot be used “as–is” in a practical industrial circuit.
2. The windings are given for a 55 Watt load. For proper operation they must be re–calculated with any other loads.
Figure 22. Application Example
8
Motorola Bipolar Power Transistor Device Data
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.107″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
LEADS
HEATSINK
HEATSINK
0.107″ MIN
0.110″ MIN
Figure 22a. Screw or Clip Mounting Position
for Isolation Test Number 1
Figure 22b. Clip Mounting Position
for Isolation Test Number 2
Figure 22c. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 23a. Screw–Mounted
Figure 23b. Clip–Mounted
Figure 23. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant
pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package.
However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs
of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Motorola Bipolar Power Transistor Device Data
9
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
STYLE 1:
PIN 1.
2.
3.
4.
R
V
J
BASE
COLLECTOR
EMITTER
COLLECTOR
G
D
N
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BUL45
CASE 221A–06
TO–220AB
ISSUE Y
–T–
–B–
F
SEATING
PLANE
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
Q
U
A
1 2 3
H
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
Y
BUL45F
CASE 221D–02
(ISOLATED TO–220 TYPE)
ISSUE D
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
10
◊
Motorola Bipolar Power Transistor Device Data
*BUL45/D*
BUL45/D