isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV52 DESCRIPTION ·High Current Capability ·Low Collector Saturation Voltage: VCE(sat)= 0.8V (Max.) @IC= 4A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage (VBE= -1.5V) 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 4 A IBM Base Current-peak 6 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.17 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV52 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.27A IC= 4A; IB= 0.27A; TC= 100℃ 0.8 0.9 V VCE (sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A IC= 8A; IB= 0.8A; TC= 100℃ 0.9 1.5 V VCE (sat)-3 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.5A IC= 12A; IB= 1.5A; TC= 100℃ 1.2 1.9 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A; IB= 0.8A IC= 8A; IB= 0.8A; TC= 100℃ 1.3 1.3 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A; IB= 1.5A IC= 12A; IB= 1.5A; TC= 100℃ 1.5 1.5 V ICER Collector Cutoff Current VCE= VCEV; RBE= 10Ω VCE= VCEV; RBE= 10Ω; TC=100℃ 0.5 2.5 mA ICEV Collector Cutoff Current VCE= VCEV; VBE= -1.5V VCE= VCEV; VBE= -1.5V;TC=100℃ 0.5 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA isc website：www.iscsemi.cn CONDITIONS 2 MIN MAX UNIT 250 V 7 V