Diodes SMD Type Switching Diodes DAN217 (KAN217) SOT-23-3 Unit: mm 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● High reliability 1 0.55 ● Ultra high speed switching +0.2 1.6 -0.1 +0.2 2.8 -0.1 ■ Features 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 0-0.1 1 +0.1 0.68 -0.1 +0.2 1.1 -0.1 3 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating VRM 80 Reverse Voltage (DC) VR 80 Average rectified forward current (Single) Io 100 Forward Current (Single) IFM 300 Reverse Voltage Unit V mA Isurge 4 A Power Dissipation Pd 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Surge current (t=1us) Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA Forward voltage VF IF= 100 mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 uA Capacitance between terminals Ct VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr VR=6V,IF=5mA, RL=50Ω 4 ns 80 V ■ Marking Marking BA* www.kexin.com.cn 1 Diodes SMD Type Switching Diodes DAN217 (KAN217) ■ Typical Characterisitics Ta=150℃ 10000 Ta=75℃ Ta=125℃ Ta=150℃ Ta=-25℃ 1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 80 REVERSE CURRENT:IR(nA) 940 930 920 910 AVE:921.7mV 900 Ta=25℃ VR=80V n=10pcs 80 70 60 50 40 AVE:9.655nA 30 20 8 7 6 5 4 AVE:1.17pF 3 2 10 1 0 0 VF DISPERSION MAP Ct DISPERSION MAP IR DISPERSION MAP 20 1cyc Ifsm 8.3ms 10 5 AVE:3.50A 0 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) REVERSE RECOVERY TIME:trr(ns) 10 15 5 4 3 2 1 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISRESION MAP trr DISPERSION MAP t 10 1 0.1 2 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.kexin.com.cn 100 9 100 ｶﾞﾗｽｴﾎﾟｷｼ基板実装時 Mounted on epoxy board IM=1mA IM=100mA 10 IF=10mA IF=10A 1ms1mstimetime ELECTROSTATIC DDISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 8 7 6 5 AVE:2.54kV 4 3 AVE:0.97kV 2 1 300us 300us 1 0.001 20 Ta=25℃ VR=6V f=1MHz n=10pcs 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 90 Ta=25℃ IF=100mA n=30pcs 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 950 1 0.1 0 0 100 200 300 400 500 600 700 800 900 100 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS FORWARD VOLTAGE:VF(mV) f=1MHz 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) 10 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ 10 Ta=125℃ 1000 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 0 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 100