Daesan E13001 TO-92 Power transistor Datasheet

POWER TRANSISTOR E13001
SWITCHING REGULATOR APPLICATION
• High speed switching
• Suitable for switching regulator
and motor control
• Case : TO-92 molded plastic body
TO-92
A
DIM
B
R
P
L
F
K
D
G
H
J
V
NPN SILICON TRANSISTOR
FEATURES
A
B
C
D
F
G
H
J
K
L
N
P
R
V
SEATING
PLANE
1 2 3
INCHES
MIN
MAX
0.175 0.205
0.290 0.310
0.125 0.165
0.018 0.022
0.016 0.019
0.045 0.055
0.095 0.105
0.018 0.024
0.500
--0.250
--0.080 0.105
--0.100
0.135
--0.135
---
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
--3.43
---
N C
N
o
Tc=25 C unless otherwise specified
Parameter
Symbol
Value
UNIT
Power dissipation
PCM
0.75
W
Collector current
ICM
Operating and storage junction temperature range
TJ, TSTG
ELECTRICAL CHARACTERISTICS
Parameter
0.2
o
A
o
o
-55 C to +150 C
C
o
Tc=25 C unless otherwise specified
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA , IE=0
600
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA , IC=0
7
V
Collector cut-off current
ICBO
VCB=600V , IE=0
100
μA
Collector cut-off current
ICEO
VCE=400V , IB=0
200
μA
Emitter cut-off current
IEBO
VEB=7V , IC=0
100
μA
hFE(1)
VCE=20V , IC=20mA
10
hFE(2)
VCE=10V , IC=0.25mA
5
Collector-emitter saturation voltage
VCEsat
IC=50mA , IB=10mA
0.5
V
Base-emitter saturation voltage
VBEsat
IC=50mA , IB=10mA
1.2
V
IE=100mA
1.1
V
DC current gain
70
Base-emitter voltage
VBE
Transition frequency
fT
Fall time
tf
IC=50mA , IB1=-IB2=5mA ,
0.3
μS
Storage time
ts
VCC=45V
1.5
μS
VCE=20V , IC=20mA
f=1MHz
8
MHz
RATINGS AND CHARACTERISTIC CURVES E13001
Similar pages