Seme LAB BUY48 High voltage, high current silicon expitaxial planar npn transistor Datasheet

BUY47
BUY48
MECHANICAL DATA
Dimensions in mm (inches)
HIGH VOLTAGE, HIGH CURRENT
SILICON EXPITAXIAL PLANAR
NPN TRANSISTOR
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
5 .0 8 (0 .2 0 0 )
ty p .
APPLICATIONS
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1
2
3
2 .5 4
(0 .1 0 0 )
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
1 2 .7 0
(0 .5 0 0 )
m in .
0 .8 9 m a x .
(0 .0 3 5 )
Intended for High Voltage, High Current,
Switching Applications up to 7A.
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
4 5 °
TO–39 PACKAGE
Pin 1 – Emitter
Pin 2 – Base
Pin 3 – Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
BUY47
BUY48
150V
120V
200V
170V
VCBO
Collector – Base Voltage
(IE = 0)
VCEO
Collector – Emitter Voltage
(IB = 0)
VEBO
Emitter – Base Voltage
(IC = 0)
IC
Collector Current
7A
ICM
Peak Collector Current (repetitive)
10A
Ptot
Total Power Dissipation
@Tamb £ 25°C
1W
@Tcase £ 50°C
10W
TSTG
Storage Temperature Range
TJ
Maximum Operating Junction Temperature
Semelab plc.
6V
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
–65 to +200°C
200°C
Prelim. 11/99
BUY48
ELECTRICAL CHARACTERISTICS
Parameter
ICBO
Collector Cut-off Current
V(BR)CBO* Collector – Base Breakdown Voltage
VCEO(sus)* Collector – Emitter Sustaining Voltage
VEBO*
VCE(sat)*
VBE(sat)*
hFE*
Emitter – Base Voltage
Collector – Emitter Saturation Voltage
Base – Emitter Saturation Voltage
DC Current Gain
(Tcase = 25°C unless otherwise stated)
Test Conditions
Min.
Typ.
Max. Unit
VCB = 80V
BUY47
10
mA
IE = 0
TC = 125°C
1
mA
VCB = 100V
BUY48
10
mA
IE = 0
TC = 125°C
1
mA
IC = 1mA
BUY47
150
IE = 0
BUY48
200
IC = 20mA
BUY47
120
IB = 0
BUY48
170
IE = 1mA
IC = 0
IC = 0.5A
IB = 50mA
IC = 2A
IB = 0.2A
0.45
IC = 5A
IB = 0.5A
1
IC = 0.5A
IB = 50mA
IC = 2A
IB = 0.2A
1.1
IC = 5A
IB = 0.5A
1.5
IC = 50mA
VCE = 5V
IC = 0.5A
VCE = 5V
40
150
IC = 2A
VCE = 5V
40
130
IC = 5A
VCE = 5V
15
45
IC = 100mA
VCE = 10V
IE = 0
VCB = 50V
fT
Transition Frequency
CCBO
Collector – Base Capacitance
ton
Turn–On Time
IC = 5A
toff
Fall Time
IB1 = –IB2 = 0.5A
f = 1MHz
VCC = 40V
V
V
6
V
0.05
V
0.8
V
130
—
90
45
MHz
80
1
2
pF
ms
NOTES
* Pulse Test: tp = 300ms, d = 1.5%
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Prelim. 11/99
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