APT MT150DT18L2 Three phase bridge thyristor Datasheet

MT150DT18L2
Three Phase Bridge
+ Thyristor
VRRM / VDRM
IFAV / ITAV
800 to 1800V
150Amp
Features
y
Circuit
y
-
+
G
y
Blocking voltage:800 to 1800V
Three Phase Bridge and a Thyristor
Low Forward Voltage
R2
Applications
y
y
y
R S T
y
Inverter for AC or DC motor control
Current stablilzed power supply
Switching power supply
UL recognized applied for file no. E360040
Module Type
TYPE
VRRM/ VDRM
VRSM
MT150DT08L2
MT150DT12L2
MT150DT16L2
MT150DT18L2
800V
1200V
1600V
1800V
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
ID
IFSM
i2t
Visol
Tvj
Tstg
Mt
Mt
Item
Output Current(D.C.)
Surge forward current
Tc=93℃ Three phase full wave
t=10mS Tvj =45℃
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
a.c.50HZ;r.m.s.;1min
Operating Junction Temperature
Storage Temperature
Mounting Torque
Ms
To terminals(M4)
To terminals(M6)
To heatsink(M6)
Module(Approximately)
Weight
Thermal Characteristics
Symbol
Item
Thermal
Impedance,
max.
Rth(j-c)
Rth(c-s)
Conditions
Thermal Impedance, max.
Conditions
Values
Units
150
1500
A
A
11250
A2s
3000
V
-40 to +150
℃
-40 to +125
℃
Nm
Nm
2±15%
5±15%
5±15%
320
Nm
g
Values
Units
Junction to Case(TOTAL)
0.14
Case to Heat sink
0.07
℃/W
℃/W
Electrical Characteristics
Symbol
Item
Values
Units
VFM
Forward Voltage Drop, max.
T=25℃ IF =150A
1.35
V
IRRM
Repetitive Peak Reverse Current,
max.
Tvj =25℃ VRD=VRRM
Tvj =150℃ VRD=VRRM
≤2
≤10
mA
mA
Document Number: S-M0058
Rev.1.0, May.31, 2013
Conditions
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1
MT150DT18L2
◆Thyristor
Maximum Ratings
Symbol
Item
Conditions
Values
Units
ITAV
Average On-State Current
Tc=93℃, Single Phase half wave
180o conduction
150
A
ITSM
Surge On-State Current
TVJ=45℃ t=10ms (50Hz), sine
VR=0
1500
A
11250
A2s
3000
V
Operating Junction Temperature
-40 to +125
℃
Storage Temperature
-40 to +125
℃
Nm
i2t
Visol
Tvj
Tstg
Mt
Mt
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Mounting Torque
Ms
a.c.50HZ;r.m.s.;1 min
To terminals(M4)
To terminals(M6)
2±15%
5±15%
To heatsink(M6)
5±15%
Nm
di/dt
Critical Rate of Rise of On-State
Current
TVJ=TVJM, VD=1/2VDRM ,IG =100mA
diG/dt=0.1A/μs
150
A/μs
dv/dt
Critical Rate of Rise of Off-State
Voltage, min.
TJ=TVJM,VD=2/3VDRM,linear voltage
rise
500
V/μs
Electrical and Thermal Characteristics
Symbol
Item
Conditions
Values
Min. Typ. Max.
Units
1.35
V
TVJ=TVJM ,VR=VRRM ,VD
=VDRM
40
mA
Gate Trigger Voltage, max.
TVJ =25℃ , VD =6V
3
V
IGT
Gate Trigger Current, max.
150
mA
Rth(j-c)
Thermal Impedance, max.
TVJ =25℃ , VD =6V
Junction to Case
0.16
Rth(c-s)
Thermal Impedance, max.
Case to Heatsink
0.07
℃/W
℃/W
VTM
Peak On-State Voltage, max.
T=25℃ IT =150A
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
VGT
IRRM/IDRM
Document Number: S-M0058
Rev.1.0, May.31, 2013
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MT150DT18L2
Performance Curves
500
250
Three phase
W
400
200
300
150
200
100
100
50
Pvtot
ID
0
0 ID
40
80
120
A
Three phase
A
0
160
0 Tc
Fig1. Power dissipation
50
100
150
℃
Fig2. Forward Current Derating Curve
0.20
2000
℃/ W
A
50HZ
Zth(j-C)
0.10
Per one element
1000
Single phase half wave
Tj=25℃ start
0
0.001 t 0.01
0.1
1.0
10
0
S 100
10
cycles
100
Fig4. Max Non-Repetitive Forward Surge
Current
Fig3. Transient thermal impedance
1000
A
1
250
max.
W
200
150
100
100
50
IF
Tj=25℃
PTAV
10
0.5 VF
1.0
1.5
2.0
V
0
2.5
Fig5. Forward Characteristics
Document Number: S-M0058
Rev.1.0, May.31, 2013
0 ID
40
80
120
A
160
Fig6. SCR Power dissipation
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MT150DT18L2
250
0.30
A
℃/ W
200
150
0.15
Zth(j-C)
100
50
ITAVM
0
0 Tc
50
100
℃
0
150
0.1
1.0
10
S 100
Fig8. SCR Transient thermal impedance
Fig7. SCR Forward Current Derating Curve
100
max.
max.
A
V
Pe
ak
Peak Forward Gate Voltage (10V)
10
Av
er
ag
e
100
G
at
e
Po
w
er
(3
W
G
at
e
Po
we
r(
10
W
)
)
1
-10℃
Peak Gate Current (3A)
1000
0.001 t 0.01
135℃
IT
10
VG
Tj=25℃
0.5 VTM
1.0
1.5
2.0
V
0.1
2.5
101
IG
102
Maximum Gate Non-Trigger Voltage
103
mA 104
Fig10. Gate trigger Characteristics
Fig9. SCR Forward Characteristics
Document Number: S-M0058
Rev.1.0, May.31, 2013
25℃
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MT150DT18L2
Package Outline Information
CASE: L2
Dimensions in mm
Document Number: S-M0058
Rev.1.0, May.31, 2013
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