ON MCR310-10 Silicon controlled rectifiers reverse blocking triode thyristor Datasheet

MCR310 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
Designed for industrial and consumer applications such as
temperature, light and speed control; process and remote controls;
warning systems; capacitive discharge circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Low Trigger Currents, 200 mA Maximum for Direct Driving from
Integrated Circuits
• Pb−Free Packages are Available
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SCRs
10 AMPERES RMS
400 thru 800 VOLTS
G
A
C
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Peak Repetitive Forward and Reverse
Blocking Voltage(1)
(TJ = −40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
On-State RMS Current (TC = 75°C)
IT(RMS)
10
Amps
ITSM
100
Amps
I2t
40
A2s
Peak Gate Voltage (t p 10 ms)
VGM
±5
Volts
Peak Gate Current (t p 10 ms)
IGM
1
Amp
Peak Gate Power (t p 10 ms)
PGM
5
Watts
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = −40 to 110°C)
Circuit Fusing (t = 8.3 ms)
Average Gate Power
Value
Unit
400
600
800
1
PG(AV)
0.75
Watt
Operating Junction Temperature Range
TJ
−40 to +110
°C
Storage Temperature Range
Tstg
−40 to +150
°C
−
8
in.-lb.
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.2
Thermal Resistance, Junction to Ambient
RθJA
60
Mounting Torque
March, 2007 − Rev. 3
1
2
3
TO−220AB
CASE 221A
STYLE 3
x
A
Y
WW
G
= 6, 8 or 10
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Shipping
MCR310−6
TO220AB
500/Box
MCR310−6G
TO220AB
(Pb−Free)
500/Box
°C/W
MCR310−8
TO220AB
500/Box
°C/W
MCR310−8G
TO220AB
(Pb−Free)
500/Box
MCR310−10
TO220AB
500/Box
MCR310−10G
TO220AB
(Pb−Free)
500/Box
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2007
MCR310−xG
AYWW
Package
THERMAL CHARACTERISTICS
Characteristic
4
Volts
Device
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR310/D
MCR310 Series
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TC = 110°C
TC = 25°C
IDRM
—
—
—
—
500
10
mA
mA
TC = 110°C
TC = 25°C
IRRM
—
—
—
—
500
10
mA
mA
On-State Voltage
(ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%)
VTM
—
1.7
2.2
Volts
Gate Trigger Current, Continuous dc(2)
(VD = 12 V, RL = 100 Ω)
IGT
—
30
200
mA
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100 Ω)
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)
VGT
—
0.1
0.5
—
1.5
—
IH
—
—
6
mA
dv/dt
—
10
—
V/ms
tgt
—
1
—
ms
Current(1)
Peak Forward Blocking
(TJ = 110°C, VD = Rated VDRM)
Peak Reverse Blocking Current(1)
(TJ = 110°C, VR = Rated VRRM)
Holding Current
(VD = 12 V, ITM = 100 mA)
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)
Volts
PAV , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM CASE TEMPERATURE (° C)
1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the
voltage applied exceeds the rated blocking voltage.
2. Does not include RGK current.
120
110
α
α = CONDUCTION ANGLE
100
α = 30°
90
60
90°
°
180°
80
dc
70
0
2
4
6
8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
20
dc
16
α
α = CONDUCTION ANGLE
12
α = 30° 60°
8
4
0
10
0
Figure 1. Average Current Derating
VGT , GATE TRIGGER VOLTAGE (VOLTS)
NORMALIZED GATE CURRENT
2
VD = 12 Vdc
1
0.5
−20
0
20
40
60
80
90
100
TJ, JUNCTION TEMPERATURE (°C)
2
4
6
8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
10
Figure 2. On-State Power Dissipation
3
0.3
−40
180°
90
°
120
140
0.7
VD = 12 Vdc
0.6
0.5
0.4
0.3
0.2
0.1
−60
Figure 3. Normalized Gate Current
−40
−20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Gate Voltage
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2
120
MCR310 Series
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−− 0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MCR310/D
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