MCR310 Series Preferred Device Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. • Center Gate Geometry for Uniform Current Density • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Low Trigger Currents, 200 mA Maximum for Direct Driving from Integrated Circuits • Pb−Free Packages are Available http://onsemi.com SCRs 10 AMPERES RMS 400 thru 800 VOLTS G A C MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = −40 to 110°C) (1/2 Sine Wave, RGK = 1 kΩ) MCR310-6 MCR310-8 MCR310-10 VDRM or VRRM On-State RMS Current (TC = 75°C) IT(RMS) 10 Amps ITSM 100 Amps I2t 40 A2s Peak Gate Voltage (t p 10 ms) VGM ±5 Volts Peak Gate Current (t p 10 ms) IGM 1 Amp Peak Gate Power (t p 10 ms) PGM 5 Watts Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = −40 to 110°C) Circuit Fusing (t = 8.3 ms) Average Gate Power Value Unit 400 600 800 1 PG(AV) 0.75 Watt Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C − 8 in.-lb. Symbol Max Unit Thermal Resistance, Junction to Case RθJC 2.2 Thermal Resistance, Junction to Ambient RθJA 60 Mounting Torque March, 2007 − Rev. 3 1 2 3 TO−220AB CASE 221A STYLE 3 x A Y WW G = 6, 8 or 10 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Shipping MCR310−6 TO220AB 500/Box MCR310−6G TO220AB (Pb−Free) 500/Box °C/W MCR310−8 TO220AB 500/Box °C/W MCR310−8G TO220AB (Pb−Free) 500/Box MCR310−10 TO220AB 500/Box MCR310−10G TO220AB (Pb−Free) 500/Box Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2007 MCR310−xG AYWW Package THERMAL CHARACTERISTICS Characteristic 4 Volts Device Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR310/D MCR310 Series ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted) Characteristic Symbol Min Typ Max Unit TC = 110°C TC = 25°C IDRM — — — — 500 10 mA mA TC = 110°C TC = 25°C IRRM — — — — 500 10 mA mA On-State Voltage (ITM = 20 A Peak, Pulse Width p 1 ms, Duty Cycle p 2%) VTM — 1.7 2.2 Volts Gate Trigger Current, Continuous dc(2) (VD = 12 V, RL = 100 Ω) IGT — 30 200 mA Gate Trigger Voltage, Continuous dc (VD = 12 V, RL = 100 Ω) (VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C) VGT — 0.1 0.5 — 1.5 — IH — — 6 mA dv/dt — 10 — V/ms tgt — 1 — ms Current(1) Peak Forward Blocking (TJ = 110°C, VD = Rated VDRM) Peak Reverse Blocking Current(1) (TJ = 110°C, VR = Rated VRRM) Holding Current (VD = 12 V, ITM = 100 mA) Critical Rate of Rise of Forward Blocking Voltage (VD = Rated VDRM, TJ = 110°C, Exponential Waveform) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 20 A, IG = 2 mA) Volts PAV , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM CASE TEMPERATURE (° C) 1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 2. Does not include RGK current. 120 110 α α = CONDUCTION ANGLE 100 α = 30° 90 60 90° ° 180° 80 dc 70 0 2 4 6 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 20 dc 16 α α = CONDUCTION ANGLE 12 α = 30° 60° 8 4 0 10 0 Figure 1. Average Current Derating VGT , GATE TRIGGER VOLTAGE (VOLTS) NORMALIZED GATE CURRENT 2 VD = 12 Vdc 1 0.5 −20 0 20 40 60 80 90 100 TJ, JUNCTION TEMPERATURE (°C) 2 4 6 8 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 10 Figure 2. On-State Power Dissipation 3 0.3 −40 180° 90 ° 120 140 0.7 VD = 12 Vdc 0.6 0.5 0.4 0.3 0.2 0.1 −60 Figure 3. Normalized Gate Current −40 −20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Gate Voltage http://onsemi.com 2 120 MCR310 Series PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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