Fairchild FSAB20PH60 Smart power module for partial switching converter Datasheet

FSAB20PH60
Smart Power Module for Partial Switching Converter
Features
General Description
• Very low thermal resistance due to using DBC
FSAB20PH60 is an advanced smart power module of PSC(Partial Switching Converter) that Fairchild has newly developed
and designed mainly targeting low-power application especially
for an air conditioners. It combines optimized circuit protection
and drive IC matched to IGBTs. System reliability is further
enhanced by the integrated under-voltage lock-out and shortcircuit protection function.
• 600V-20A single-phase rectifier bridge diode including two
IGBTs for partial switching converter
• Integrated IC for gate driving and protection
• Divided negative dc-link terminals for current sensing
• Isolation rating of 2500Vrms/min.
Applications
• AC 187V ~ 276V single-phase partial-switching converter of
air-conditioner
Top View
Bottom View
44mm
26.8mm
Figure 1.
©2006 Fairchild Semiconductor Corporation
FSAB20PH60 Rev. A
1
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FSAB20PH60 Smart Power Module for Partial Switching Converter
September 2006
• 600V-20A rectifiers for single-phase ac input with IGBT switches for operation of partial switching converter
Integrated Drive, Protection and System Control Functions
• For IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
• Built-in thermistor: Over-temperature monitoring
Pin Configuration
Top View
(1) VCC
(2) COM
(3) NC
(4) IN(R)
(5) IN(S)
(6) VFO
(7) CFOD
(8) CSC
(21) ND
(22) NR
(23) NS
(9) NC
(10) NC
(11) NC
(12) NC
(24) NC
Case Temperature (TC)
Detecting Point
(25) R
(13) NC
(14) NC
(15) NC
(16) NC
(26) S
(17) NC
(18) NC
(19) RTH
(20) VTH
DBC Substrate
(27) PR
Figure 2.
2
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Integrated Power Functions
FSAB20PH60 Smart Power Module for Partial Switching Converter
Pin Descriptions
Pin Number
Pin Name
Pin Description
1
VCC
2
COM
3
NC
4
IN(R)
Signal Input for R-phase IGBT
5
IN(S)
Signal Input for S-phase IGBT
6
VFO
Fault Output
7
CFOD
8
CSC
Capacitor (Low-pass Filter) for Short-Current Detection
9
NC
Dummy Pin
10
NC
Dummy Pin
11
NC
Dummy Pin
12
NC
Dummy Pin
13
NC
Dummy Pin
14
NC
Dummy Pin
15
NC
Dummy Pin
16
NC
Dummy Pin
17
NC
Dummy Pin
Common Bias Voltage for IC
Common Supply Ground
Dummy Pin
Capacitor for Fault Output Duration Time Selection
18
NC
19
R(TH)
Series Resistor for the Use of Thermistor (Temperature Detection)
Dummy Pin
20
V(TH)
Thermistor Bias Voltage
21
ND
Negative DC–Link of Rectifier Diode
22
NR
Negative DC–Link of R-phase IGBT
23
NS
Negative DC–Link of S-phase IGBT
24
NC
25
R
AC Input for R Phase
26
S
AC Input for S Phase
27
PR
Positive DC–Link Output
Dummy Pin
Internal Equivalent Circuit and Input/Output Pins
(20) VTH
(19) RTH
NTC
Thermistor
(27) PR
D1
D2
(8) CSC
CSC
(26) S
(7) CFOD
CFOD
(25) R
(6) VFO
VFO
(5) IN(S)
IN(S)
(4) IN(R)
IN(R)
(2) COM
COM
(1) VCC
VCC
OUT(S)
Q1
D3
Q2
D4
(21) ND
OUT(R)
(23) NS
(22) NR
Note:
The low-side is composed of two IGBTs including rectifying diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. The highside is composed of two rectifying diodes without gate driving IC.
Figure 3.
3
FSAB20PH60 Rev. A
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Unless Otherwise Specified)
Converter Part
Symbol
Vi
Vi(Surge)
VPN
Parameter
Conditions
Rating
Units
Applied between R-S
276
V
Input Supply Voltage (Surge)
Applied between R-S
500
V
Output Voltage
Applied between P-N
400
V
Input Supply Voltage
Output Voltage (Surge)
Applied between P-N
500
V
VCES
Collector-emitter Voltage
IGBT
600
V
VRRM
600
V
11
ARMS
14
ARMS
-20 ~ 125
°C
VPN(surge)
Repetitive Peak Reverse Voltage
Diode
Ii
Input Current (100% Load)
TC ≤ 90°C, VO = 280V, fPWM = 60Hz
Ii
Input Current (130% Load)
TC ≤ 90°C, VO = 280V, fPWM = 60Hz
TJ
Operating Junction Temperature
(Note 1)
Note:
1. The maximum junction temperature rating of the power chips integrated within the module is 150 °C(@TC ≤ 100°C). However, to insure safe operation, the average junction
temperature should be limited to TJ(ave) ≤ 125°C (@TC ≤ 100°C)
Control Part
Symbol
Parameter
Conditions
Rating
Units
VCC
Control Supply Voltage
Applied between VCC - COM
20
V
VIN
Input Signal Voltage
Applied between IN(R), IN(S) - COM
-0.3~VCC+0.3
V
VFO
Fault Output Supply Voltage
Applied between VFO - COM
-0.3~VCC+0.3
V
IFO
Fault Output Current
Sink Current at VFO Pin
5
mA
VSC
Current Sensing Input Voltage Applied between CSC - COM
-0.3~VCC+0.3
V
Total System
Symbol
TC
Parameter
Module Case Operation Temperature
TSTG
Storage Temperature
VISO
Isolation Voltage
Conditions
-20°C < TJ < 125°C, See Fig.2
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to DBC
4
FSAB20PH60 Rev. A
Rating
Units
-20 ~ 100
°C
-40 ~ 125
°C
2500
Vrms
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Absolute Maximum Ratings (TJ = 25°C,
Thermal Resistance
Symbol
Rth(j-c)Q
Rth(j-c)D
Parameter
Conditions
Junction to Case Thermal
Resistance
Min.
Typ.
Max.
Units
Each IGBT under Operating Condition
-
-
2.8
°C/W
Each Diode under Operating Condition
-
-
2.6
°C/W
Note:
2. For the measurement point of case temperature(TC), please refer to Figure 2.
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
Main Circuit Part
Symbol
Item
Conditions
VCE(SAT)
Collector-Emitter Saturation
Voltage
VCC = VBS =15V
VIN = 5V
IC = 6.5A, TJ = 25°C
IC = 20A, TJ = 25°C
VFM
Diode Forward Voltage
VIN = 0V
tON
Switching Times
VPN = 300V, VCC = VBS = 15V
IC = 6.5A
VIN = 0V ↔ 5V, Inductive Load
(Note 3)
Min.
Typ.
Max.
Units
-
2.1
2.6
V
-
1.1
1.5
V
-
0.48
-
µs
-
0.85
-
µs
-
0.56
-
µs
tC(OFF)
-
0.10
-
µs
trr
-
1.35
-
µs
tC(ON)
tOFF
ICES
IR
Collector - Emitter
Leakage Current
VCE = VCES
-
-
250
µA
Diode Leakage Current
VR = VRRM
-
-
250
µA
Note:
3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.
100% IC 120% IC
trr
V CE
IC
IC
V IN
V IN
tON
tOFF
tC(ON)
V IN(ON)
V CE
V IN(OFF)
10% IC 90% IC 10% V CE
tC(OFF)
10% V CE
10% IC
Figure 4. Switching Time Definition
5
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Absolute Maximum Ratings
Control Part
Symbol
Parameter
Conditions
Typ.
Max.
Units
-
-
23
mA
4.5
-
-
V
IQCCL
Quiescent VCC Supply
Current
VCC = 15V
IN(L) = 0V
VFOH
Fault Output Voltage
VSC = 0V, VFO Circuit: 4.7kΩ to 5V Pull-up
-
-
0.8
V
VSC(ref)
Short Circuit Trip Level
VCC = 15V (Note 4)
0.45
0.5
0.55
V
UVCCD
Supply Circuit UnderVoltage Protection
Detection Level
10.7
11.9
13.0
V
Reset Level
11.2
12.4
13.2
V
VSC = 1V, VFO Circuit: 4.7kΩ to 5V Pull-up
VFOL
UVCCR
VCC(L) - COM
Min.
tFOD
Fault-out Pulse Width
CFOD = 33nF (Note 5)
1.0
1.8
-
ms
VIN(ON)
ON Threshold Voltage
Applied between IN(R), IN(S) - COM
3.0
-
-
V
VIN(OFF)
OFF Threshold Voltage
RTH
Resistance of Thermistor
-
-
0.8
V
@ TC = 25°C (Note Fig. 10)
-
50
-
kΩ
@ TC = 80°C (Note Fig. 10)
-
5.76
-
kΩ
Note:
4. Over current protection is functioning only for the low-side IGBT.
5. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : CFOD = 18.3 x 10-6 x tFOD[F]
Recommended Operating Conditions
Symbol
Vi
Parameter
Condition
Value
Min.
Typ.
Max.
Units
Input Supply Voltage
Applied between R - S
187
-
276
Vrms
VPN
Output Voltage
Applied between P - N
-
280
400
V
VCC
Control Supply Voltage
Applied between VCC - COM
13.5
15
16.5
V
fPWM
PWM Input Signal
TC ≤ 100°C, TJ ≤ 125°C, Per IGBT (Note 6)
-
60
-
Hz
Note:
6. Regarding the switching method of FSAB20PH60, it follows the control method of the typical partial-switching power factor correction circuit as shown in Figure 5.
6
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Electrical Characteristics (TJ = 25°C, Unless Otherwise Specified)
D2
Vac
IS
Cdc
L
o
a
d
1.5 Q , D
2
3
1 ON
Q1 , D 4
ON
Input
Signal
(a)
0.5
Q1
Q2
D3
D4
Rsh
-0.5
0
D 1 , D4
ON
D 2 , D3
ON
0
2
4
6
8
10
12
14
16
18
20
6
8
10
12
14
16
18
20
16
18
20
18
20
20
IS(A)
10
(b)
Input Current
0
-10
L
o
a
d
-20
0
2
IQ(A)
10
IGBT Current
-20
0
20
10
ID(A)
L
o
a
d
Q1
ON
0
Q2
ON
-10
(c)
4
20
2
4
6
8
10
12
Diode Current
D 1 ,D 4
ON
0
D2 , D 3
ON
-10
-20
0
14
2
4
6
8
10
12
Time(ms)
14
16
Note:
Depending on the polarity of input voltage Vac, Q1 or Q2 is turned on at the zero crossing point of input voltage, and turned off considering the output power and distortion of input
current. Each IGBT turns on with zero current with the utility frequency, 50 or 60Hz.
Figure 5. PWM Example of FSAB20PH60
7
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
D1
Lac
Parameter
Mounting Torque
Heatsink Flatness
Conditions
Mounting Screw: M3
Recommended 0.62Nm
Limits
Units
Min.
Typ.
Max.
0.51
0.62
0.72
N•m
0
-
120
um
-
15.00
-
g
Note Fig. 6
Weight
(+)
(+)
(+)
Figure 6. Flatness Measurement Position
8
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Mechanical Characteristics and Ratings
Input Signal
Protection
Circuit State
RESET
SET
RESET
UV CCR
a1
Control
Supply Voltage
a6
UV CCD
a2
a3
a4
a7
Output Current
a5
Fault Output Signal
a1 : Control supply voltage rises: After the voltage rises UVCCR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVCCD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts.
a6 : Under voltage reset (UVCCR).
a7 : Normal operation: IGBT ON and carrying current.
Figure 7. Under-Voltage Protection
9
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Time Charts of SPMs Protective Function
FSAB20PH60 Smart Power Module for Partial Switching Converter
Lower arms
control input
c6 c7
Protection
circuit state
SET
Internal IGBT
Gate-Emitter Voltage
RESET
c3
c2
SC
c4
c1
c8
Output Current
SC Reference Voltage
Sensing Voltage
of the shunt
resistance
Fault Output Signal
c5
CR circuit tim e
constant delay
(with the external shunt resistance and CR connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : Hard IGBT gate interrupt.
c4 : IGBT turns OFF.
c5 : Fault output timer operation starts: The pulse width of the fault output signal is set by the external capacitor CFO.
c6 : Input “L” : IGBT OFF state.
c7 : Input “H”: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c8 : IGBT OFF state
Figure 8. Over Current Protection
10
FSAB20PH60 Rev. A
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PSC Module
4.7kΩ
IN(R)
CPU
IN(S)
100 Ω
VFO
1nF
1nF
COM
Note:
1. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s
printed circuit board. The SPM input signal section integrates 3.3kΩ (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the
signal voltage drop at input terminal.
2. The logic input is compatible with standard CMOS or LSTTL outputs.
Figure 9. Recommended CPU I/O Interface Circuit
R-T Graph
120
Resistance [kΩ]
100
80
60
40
20
0
20
30
40
50
60
70
80
90 100 110 120 130
Temperature [°C]
Figure 10. R-T Curve of the Built-in Thermistor
11
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
5V-Line
+5V
LAC
PSC Module, FSAB20PH60
VTH
RTH
Temperature
Microcontroller
or DSP
RTH
0.1µF
+5V
CSC
CFOD
4.7kΩ
100Ω
VFO
Fault
1nF
1nF
NTC
Thermistor
D1
Gate S
IN(R)
Gate R
D2
R
CFOD
Inverter
VFO
OUT(S)
IN(S)
Q1
D3
Q2
D4
IN(R)
ND
OUT(R)
COM
COM
NR
VCC
Current
NS
VCC
100µF
S
CSC
CFOD
IN(S)
PR
1µF
RSH
RF
CSC
Note:
1. To avoid malfunction, the wiring of each input should be as short as possible. (less than 2-3cm)
2. VFO output is open collector type. This signal line should be pulled up to the positive side of the 5V power supply with approximately 4.7kΩ resistance. Please refer to Figure 9.
3. VFO output pulse width should be determined by connecting an external capacitor(CFOD) between CFOD(pin7) and COM(pin2). (Example : if CFOD = 33 nF, then tFO = 1.8ms
(typ.)) Please refer to the note 6 for calculation method.
4. Input signal is High-Active type. There is a 3.3kΩ resistor inside the IC to pull down each input signal line to GND. When employing RC coupling circuits, set up such RC couple
that input signal agree with turn-off/turn-on threshold voltage.
5. To prevent errors of the protection function, the wiring around RSC, RF and CSC should be as short as possible.
6. In the over current protection circuit, please select the RFCSC time constant in the range 3~4 µs.
7. Each capacitors should be mounted as close to the pins as possible.
8. Relays are used at almost every systems of electrical equipments of home appliances. In these cases, there should be sufficient distance between the CPU and the relays.
9. Internal NTC thermistor can be used for monitoring the case temperature and protecting the device from the overheating operation. Please select an appropriate resistor RTH
according to the application. For example, use RTH=4.7kΩ that will make the voltage across RTH to be 2.5V at 85°C of the case temperature.
10. This PSC module is not designed for the internal IGBT to be turned on when the current is flowing through the input reactor LAC. Otherwise, there will be large reverse recovery current that makes considerably large turn-on switching loss of IGBT, which may destroy the internal IGBTs.
11. Please use an appropriate shunt resistor RSH to protect the intenal IGBT from the overcurrent operation. For example, if the IGBT current has to be protected below 25A, then
use 20mΩ resistor of RSH. When selecting protecting current level, please consider the variation and tolerance of external components. Moreover, the shunt resistor path from
NR and NS to ND and ground that is connected to COM of the internal drive IC, should be thick and short in order to minimize the stray inductance that may generate improper
switching of the module.
Figure 11. Application Circuit
12
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Vac
FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings
13
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings (Continued)
14
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
Detailed Package Outline Drawings (Continued)
15
FSAB20PH60 Rev. A
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or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
16
FSAB20PH60 Rev. A
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FSAB20PH60 Smart Power Module for Partial Switching Converter
TRADEMARKS