NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK Features • • • • Low RDS(on) High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 10.1 mW @ 5.0 V 54 A 7.2 mW @ 10 V 76 A V(BR)DSS Applications 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS "30 V ID 76 A Power Dissipation (RqJC) (Note 1) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 40 A, L = 0.3 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 4 4 54 PD 83 W IDM 228 A TJ, Tstg −55 to 175 °C 1 2 3 1 DPAK CASE 369C (Surface Mount) STYLE 2 2 3 DPAK CASE 369D (Straight Lead) STYLE 2 IS 76 A EAS 240 mJ MARKING DIAGRAMS & PIN ASSIGNMENT TL 260 °C 4 Drain Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter S N−CHANNEL MOSFET Symbol Value Unit Junction−to−Case (Drain) RqJC 1.8 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 64 2 1 Drain 3 Gate Source Y WW 5803N G 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces. 4 Drain YWW 58 03NG Continuous Drain Current (RqJC) (Note 1) G YWW 58 03NG Parameter 1 2 3 Gate Drain Source = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: NTD5803N/D NTD5803N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 40 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance 1.5 −7.4 gFS mV/°C VGS = 10 V, ID = 50 A 4.9 7.2 mW VGS = 5.0 V, ID = 30 A 6.7 10.1 VDS = 15 V, ID = 15 A 13.6 S 3220 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) VGS = 0 V, f = 1.0 MHz, VDS = 25 V 390 270 nC 51 VGS = 10 V, VDS = 20 V, ID = 50 A 3.8 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 12.7 12.7 td(on) 12.6 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time tr Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDD = 32 V, ID = 50 A, RG = 2.0 W tf ns 21.4 28.3 6.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 30 A TJ = 25°C 0.88 TJ = 150°C 0.73 tRR ta tb 1.2 27.2 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR V ns 14 13.2 17 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number NTD5803NG NTD5803NT4G Package Shipping† DPAK (Straight Lead) (Pb−Free) 75 Units / Rail DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD5803N TYPICAL CHARACTERISTICS 140 100 4.5 V 80 60 4.2 V 40 4.0 V 0 3.8 V 3.4 V 0 1 2 3 4 5 6 75 TJ = 25°C 50 TJ = 150°C 25 TJ = −55°C 2 3 4 5 6 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics VGS = 10 V 0.010 0.008 0.006 TJ = 25°C 0.004 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.012 0.002 125 0 20 30 40 50 60 ID, DRAIN CURRENT (A) 70 0.015 0.014 0.013 0.012 0.011 0.010 0.009 0.008 0.007 0.006 0.005 0.004 0.003 0.002 TJ = 25°C VGS = 5 V VGS = 10 V 30 Figure 3. On−Resistance vs. Drain Current 10,000 ID = 50 A 1.6 VGS = 10 V 70 90 110 130 150 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1.7 50 ID, DRAIN CURRENT (A) VGS = 0 V TJ = 150°C 1000 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS ≥ 10 V 120 20 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 150 VGS = 5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) TJ = 25°C 10 V ID, DRAIN CURRENT (A) 160 1.4 1.3 1.2 1.1 1.0 100 TJ = 25°C 10 0.9 0.8 0.7 −55 −35 −15 5 25 45 65 1 85 105 125 145 165 2 6 10 14 18 22 26 30 34 38 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 NTD5803N VGS = 0 V 7000 TJ = 25°C 15 Ciss 4000 3000 2000 0 Coss Crss 1000 10 5 Vgs 0 5 10 Vds 15 20 25 30 35 ID = 50 A TJ = 25°C 12 6000 5000 VGS, GATE−TO−SOURCE VOLTAGE (V) 8000 40 9 6 18 VGS VDS Qgs 12 Qgd 3 0 6 0 5 10 15 20 25 30 35 40 45 50 0 55 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 50 IS, SOURCE CURRENT (A) VGS = 0 V VDD = 32 V ID = 50 A VGS = 10 V t, TIME (ns) 24 QT GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) td(on) tr td(off) 100 tf 10 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS 1 10 40 TJ = 25°C 30 20 10 0 100 0.4 0.6 0.8 1.0 1.2 1.4 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTD5803N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NTD5803N PACKAGE DIMENSIONS DPAK CASE 369D−01 ISSUE B C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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