SEMICONDUCTOR BAV70C TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES ·Small Package : SOT-23(1). E B L D L 3 G A 2 1 UNIT Reverse Voltage VR 80 V Continuous Forward Current IF 100 mA IFSM 1 A Power Dissipation PD 225* mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ J RATING K SYMBOL N CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) DIM A B C D E G J K L M N MILLIMETERS 2.90 +_ 0.1 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.10 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M 3 Surge Current (10ms) 1. ANODE 1 2. ANODE 2 3. CATHODE Storage Temperature Range 2 1 SOT-23(1) * Note1 : Package Mounted On FR-5 Board (25.4×19.05×1.57mm) Marking Lot No. H7C Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL VR Reverse Voltage Forward Voltage TEST CONDITION IR=100uA MIN. TYP. MAX. UNIT 80 - - V VF(1) IF=1mA - 0.59 0.65 VF(2) IF=10mA - 0.72 0.8 VF(3) IF=100mA - - 1.0 V Reverse Current IR VR=80V - - 1 μA Total Capacitance CT VR=0, f=1MHz - 2 3 pF 2015. 5. 12 Revision No : 0 1/2 BAV70C I F - VF 3 10 REVERSE CURRENT I R (µA) 10 10 0 10 C Ta =2 Ta 5 C =-2 5 C 2 10 Ta = FORWARD CURRENT I F (mA) I R - VR 1 10 10 -1 Ta=75 C 10 10 -2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=100 C 1 -1 Ta=50 C -2 Ta=25 C -3 0 20 40 60 80 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (V) CT - VR TOTAL CAPACITANCE C T (pF) 2.5 f=1MHz Ta=25 C 2.0 1.5 1.0 0.5 0 0.2 1 3 10 30 100 200 REVERSE VOLTAGE VR (V) 2015. 5. 12 Revision No : 0 2/2