Switching Diodes MA3J142A (MA142A) Silicon epitaxial planar type Unit : mm For switching circuits 0.3+0.1 –0 0.15+0.1 –0.05 5° 1.25±0.1 2.1±0.1 • Small S-mini type package allowing high density mounting (0.425) 3 ■ Features 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Forward current (DC) IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward IFSM 500 mA (0.15) Symbol 0 to 0.1 5° Parameter 1 : Cathode 2 : NC 3 : Anode EIAJ : SC-70 SMini3-F1 Package surge current* Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Marking Symbol: MB Note) * : t = 1 s Internal Connection 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 15 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 10 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. 135 MA3J142A Switching Diodes IF V F VF Ta IR V R 103 104 102 103 1.6 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 1.4 Forward voltage VF (V) Reverse current IR (nA) Forward current IF (mA) Ta = 150°C 100°C 102 25°C 10 1.2 1.0 IF = 100 mA 0.8 0.6 10 mA 3 mA 0.4 1 0.2 10−2 0 0.2 0.4 0.6 0.8 1.0 10−1 1.2 0 Forward voltage VF (V) 20 80 100 VR = 75 V 102 10 1 40 80 120 Ambient temperature Ta 136 160 (°C) 200 2.4 2.0 1.6 1.2 0.8 0 0 20 40 60 80 120 160 200 IF(surge) tW 0.4 0 40 1 000 Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 6V −40 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 2.8 103 10−1 0 −40 120 Ct VR 3.2 35 V Reverse current IR (nA) 60 Reverse voltage VR (V) IR Ta 104 40 80 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0.03 0.1 0.3 1 3 Pulse width tW (ms) 10 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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