AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.This device is ideal for load switch and battery protection applications. VDS (V) = -30V ID = -17A RDS(ON) < 7mΩ RDS(ON) < 8mΩ RDS(ON) < 9mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -4V) ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D Rg D G G S S S S Absolute Maximum Ratings TJ=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B VGS TA=25°C Units V ±20 V -17 TA=70°C C TA=25°C ID -13 IDM -160 Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 2.0 TJ, TSTG Symbol t ≤ 10s Steady State Steady State A 3.1 PD TA=70°C Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead -30 Maximum RθJA RθJL -55 to 150 Typ 31 59 16 Max 40 75 24 °C Units °C/W °C/W °C/W www.aosmd.com AO4447A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID =-250µA, VGS = 0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS = 0V, VGS =±16V VGS(th) Gate Threshold Voltage VDS =VGS ID =-250µA -0.8 On state drain current VGS =-10V, VDS =-5V -160 TJ = 55°C VGS =-10V, ID =-17A RDS(ON) Static Drain-Source On-Resistance TJ=125°C 7 A 9 Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance 5.5 6.9 IS Gate resistance V VGS =-4V, ID =-13A VDS =-5V, ID =-17A Rg µA 8 IS =-1A,VGS = 0V Crss ±10 8.5 Forward Transconductance 70 -0.62 4580 VGS=0V, VDS=-15V, f=1MHz mΩ S -1 V -3 A 5500 755 pF pF 564 VGS=0V, VDS=0V, f=1MHz µA -1.6 7 Diode Forward Voltage Units -1.3 6.5 VSD Output Capacitance -5 VGS =-4.5V, ID =-15A gFS Coss Max V VDS =-30V, VGS = 0V IDSS ID(ON) Typ pF Ω 160 210 SWITCHING PARAMETERS Qg (-10V) Total Gate Charge 87 105 Qg (-4.5V) Total Gate Charge 41 nC 12.8 nC 17 nC 180 ns 260 ns 1.2 µs 9.7 µs Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=-10V, VDS=-15V, ID=-17A VGS=-10V, VDS=-15V RL=-0.9Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=-17A, dI/dt=300A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=-17A, dI/dt=300A/µs 77 Body Diode Reverse Recovery Time 40 nC ns nC A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. #REF! F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev 1: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 160 -10V 140 -4V VDS=-5V -3.5V -4.5V 120 80 60 80 -ID(A) -ID (A) 100 -3V 40 60 40 125°C 20 VGS= -2.5V 20 25°C 0 0 0 1 2 3 4 5 0 10 2 3 4 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ ) 1 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) -VDS (Volts) Figure 1: On-Region Characteristics(Note E) VGS=-4V 6 VGS=-4.5V VGS=-10V 4 2 1.6 VGS= -10V ID= -17A 1.4 VGS= -4.5V ID= -15A 1.2 1.0 0.8 0 5 10 15 IF=-6.5A, dI/dt=100A/µs 20 25 30 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 20 1E+02 ID= -17A 1E+01 16 125°C IS (A) RDS(ON) (mΩ ) 1E+00 12 1E-01 125°C 8 1E-02 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-03 4 25°C OUT OF SUCH APPLICATIONS OR USES OF 25°C ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0 1E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 -VGS (Volts) -VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Figure 6: Body-Diode Characteristics(Note E) Voltage(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 VDS=-15V ID= -17A 6000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 5000 4000 3000 2000 Coss 2 1000 Crss 0 0 0 20 40 60 80 0 100 20 25 30 100µs 1ms 10ms 100ms 10s DC TJ(Max)=150°C TA=25°C 0.01 0.01 0.1 30 Power (W) -ID (Amps) 10µs RDS(ON) limited 1 20 10 0 0.001 I =-6.5A, dI/dt=100A/µs 10 100 F 1 -VDS (Volts) 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 15 TJ(Max)=150°C TA=25°C 100 0.1 10 40 1000 10 5 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4447A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC Qgd + + DUT Qgs Vds VDC Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com