ON MCR264-8 Silicon controlled rectifier Datasheet

MCR264−4, MCR264−6,
MCR264−8
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for back-to-back SCR output devices for solid state relays
or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature
Stability, Center Gate for Uniform Parameters
• 400 Amperes Surge Capability
• Blocking Voltage to 600 Volts
• Device Marking: Logo, Device Type, e.g., MCR264−4, Date Code
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SCRs
40 AMPERES RMS
200 thru 600 VOLTS
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
A
Rating
Symbol
Peak Repetitive Off−State Voltage(1)
(TJ = *40 to 125°C, Sine Wave 50 to
60 Hz; Gate Open)
MCR264−4
MCR264−6
MCR264−8
VDRM,
VRRM
On-State RMS Current
(TC = 80°C; 180° Conduction Angles)
IT(RMS)
40
A
Average On-State Current
(TC = 80°C; 180° Conduction Angles)
IT(AV)
25
A
Peak Non-repetitive Surge Current
(TC = 80°C)
(1/2 Cycle, Sine Wave 60 Hz,
TJ = 125°C)
ITSM
Forward Peak Gate Power
(Pulse Width ≤ 1.0 μs, TC = 80°C)
PGM
20
Watts
PG(AV)
0.5
Watt
Forward Peak Gate Current
(Pulse Width ≤ 1.0 μs, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to
+125
°C
Storage Temperature Range
Tstg
−40 to
+150
°C
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
Value
Volts
4
200
400
600
August, 2006 − Rev. 3
1
A
450
3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
1
2
TO−220AB
CASE 221A
STYLE 3
400
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge
conditions. Care must be taken to insure proper heat sinking when the device
is to be used at high sustained currents.
© Semiconductor Components Industries, LLC, 2006
K
Unit
Package
Shipping
MCR264−4
TO220AB
500/Box
MCR264−6
TO220AB
500/Box
MCR264−8
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR264−4/D
MCR264−4, MCR264−6, MCR264−8
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
—
—
10
2.0
μA
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
TJ = 25°C
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 125°C
IDRM , IRRM
ON CHARACTERISTICS
Peak Forward On−State Voltage(1)
(ITM = 80 A)
VTM
—
1.4
2.0
Volts
Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms, TC = − 40°C)
IGT
—
—
15
30
50
90
mA
Gate Trigger Voltage (Continuous dc)
(VAK = 12 Vdc, RL = 100 Ohms)
VGT
—
1.0
1.5
Volts
Gate Non-Trigger Voltage
(VAK = 12 Vdc, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
—
—
Volts
Holding Current
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open)
IH
—
30
60
mA
Turn-On Time
(ITM = 40 A, IGT = 60 mAdc)
tgt
—
1.5
—
μs
dv/dt
—
50
—
V/μs
DYNAMIC CHARACTERISTICS
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
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2
MCR264−4, MCR264−6, MCR264−8
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
50
125
P(AV) , AVERAGE POWER (WATTS)
TC, MAXIMUM CASE TEMPERATURE ( ° C)
Anode −
α
α = CONDUCTION ANGLE
115
105
dc
95
α = 30°
85
75
60°
90°
0
5.0
10
15
40
35
60°
dc
25
20
15
α
α = CONDUCTIVE ANGLE
10
0
25
90°
α = 30°
30
5.0
180°
20
180°
45
5.0
0
10
15
20
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. Maximum On−State Power Dissipation
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3
25
MCR264−4, MCR264−6, MCR264−8
1.1
VGT , GATE TRIGGER VOLTAGE (VOLTS)
I GT , GATE TRIGGER CURRENT (mA)
40
OFF-STATE VOLTAGE = 12 V
20
10
7.0
5.0
−40
−20
0
20
40
60
80
100
120
IH , HOLDING CURRENT (mA)
0.8
0.7
0.6
0.5
−20
−40
20
40
60
80
100
120
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current
Figure 4. Typical Gate Trigger Voltage
50
OFF-STATE VOLTAGE = 12 V
30
20
10
−40
−20
0
20
40
60
80
100
120
140
140
100
TJ = 25°C
10
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Forward Voltage
Figure 5. Typical Holding Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0
TJ, JUNCTION TEMPERATURE (°C)
70
7.0
−60
0.9
0.4
−60
140
IF , INSTANTANEOUS FORWARD CURRENT (AMPS)
4.0
−60
OFF-STATE VOLTAGE = 12 V
1.0
1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
t, TIME (ms)
Figure 7. Thermal Response
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4
200 300
500
1k
2k 3k
5k
10 k
MCR264−4, MCR264−6, MCR264−8
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE Z
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
CATHODE
ANODE
GATE
ANODE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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