MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM200DU-12H ● IC ................................................................... 200A ● VCES .......................................................... 600V ● Insulated Type ● 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 80 ±0.25 4 G1E1 12 4 4 11 18 E2 G2 C1 E2 C2E1 2–φ6.5 MOUNTING HOLES 23 23 48 CM 24 17 13 7 13.5 2.5 16 TAB C2E1 E2 21.2 +1 30 –0.5 LABEL #110. t=0.5 C1 G1 E1 25 7.5 16 2.5 E2 G2 3–M5NUTS 12mm deep CIRCUIT DIAGRAM Feb. 2009 1 MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso (Tj = 25°C, unless otherwise specified) Item Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Mounting torque — Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage Note 1. 2. 3. 4. 5. 6. (Note 1) Ratings Unit 600 ±20 200 400 200 400 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 V V A A A A W °C °C Vrms N·m N·m g (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Contact thermal resistance (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value VCE = VCES, VGE = 0V Min — Limits Typ — Max 1 IC = 20mA, VCE = 10V 4.5 6 7.5 V — — — — — — — — — — — — — — — — — 2.4 2.6 — — — 400 — — — — — — 0.48 — — 0.5 3.0 — 17.6 9.6 2.6 — 150 400 300 300 2.6 160 — 0.19 0.35 µA nF nF nF nC ns ns ns ns V ns µC K/W K/W — 0.07 — K/W Item ICES Rth(c-f) VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Test Conditions ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V (Note 4) Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω Resistive load IE = 200A, VGE = 0V IE = 200A, die / dt = –400A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) Unit mA V Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) VCE = 10V 15 14 400 VGE=20 (V) 13 300 12 11 200 10 100 9 8 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 400 Tj=25°C 0 2 4 6 8 200 100 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 100 200 300 400 8 IC = 400A 6 IC = 200A 4 2 IC = 80A 0 4 8 12 16 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 Tj = 25°C 3 2 101 7 5 3 2 100 0.6 Tj = 25°C COLLECTOR CURRENT IC (A) CAPACITANCE Cies, Coes, Cres (nF) 7 5 10 0 500 102 EMITTER CURRENT IE (A) 300 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) 500 7 5 VGE = 0V 3 2 101 Cies 7 5 3 2 Coes 100 7 5 3 2 Cres 3.0 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 1.0 1.4 1.8 2.2 2.6 Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-12H HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) tf 3 td(off) 2 102 td(on) tr 7 5 VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 1 10 2 3 5 7 102 2 2 7 5 3 3 2 2 102 100 trr 7 5 7 5 3 2 3 2 –di/dt = 400A/µs Tj = 25°C 2 3 5 7 102 10–1 2 3 5 7 103 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C Per unit base = Rth(j – c) = 0.19K/W 100 7 5 101 1 10 5 7 103 3 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY TIME trr (ns) 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 lrr 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE INSULATED TYPE 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 100 Per unit base = Rth(j – c) = 0.35K/W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A VCC = 200V 15 VCC = 300V 10 5 0 0 100 200 300 400 500 600 GATE CHARGE QG (nC) Feb. 2009 4