CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 1/8 BVDSS : 450V RDS(ON) : 0.55Ω MTN13N45E3 ID : 13A Description The MTN13N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=500V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Power Factor Correction • Flat Panel Power • Full and Half Bridge Power Supplies • Two-Transistor Forward Power Supplies Symbol Outline MTN13N45E3 G：Gate D：Drain S：Source MTN13N45E3 TO-220 G D S CYStek Product Specification Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature VDS VGS ID ID IDM EAS IAR EAR dv/dt 450 ±30 13* 7.8* 52* 570 13 16 4.5 V V A A A mJ A mJ V/ns TL 300 °C 160 1.35 -55~+150 W W/°C °C PD Tj, Tstg *Drain current limited by maximum junction temperature Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=13A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. 4. IAS=13A, VDD=50V, L=6mH, RG=25Ω, starting TJ=+25℃. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN13N45E3 Symbol Rth,j-c Rth,j-a Value 0.78 62.5 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 3/8 Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS Min. Typ. Max. Unit Test Conditions 450 2.0 - 500 0.5 5 - 4.0 ±100 1 25 0.55 V V V/°C V S nA Ω VGS=0, ID=250μA VGS=0, ID=250μA, Tj=150°C Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=6.5A VGS=±30 VDS =450V, VGS =0 VDS =360V, VGS =0, Tj=125°C VGS =10V, ID=6.5A 43 11 20 38 135 90 80 1650 235 22 - nC ID=13A, VDD=250V, VGS=10V ns VDD=250V, ID=13A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz 270 2.5 1.5 13 52 - V IS=6.5A, VGS=0V A VD=VG=0, VS=1.3V ns μC VGS=0, IF=13A, dI/dt=100A/μs *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - μA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN13N45E3 MTN13N45E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 13N45 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 4/8 Characteristic Curves MTN13N45E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 5/8 Characteristic Curves(Cont.) MTN13N45E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 6/8 Test Circuit and Waveforms MTN13N45E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 7/8 Test Circuit and Waveforms(Cont.) MTN13N45E3 CYStek Product Specification Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 8/8 CYStech Electronics Corp. TO-220 Dimension Marking: Device Name 13N45 □□□□ Date Code 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN13N45E3 CYStek Product Specification