E L E C T R O N I C CH651H-40PT Schottky Rectifier - 0.75Amp 40Volt □ Features -For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -For use in low voltage high frequency inverters, free wheeling and polarity protection application -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -ESD sensitive product handling required SOD-323 .015(0.40) .009(0.25) .055(1.40) .045(1.15) .070(1.80) .062(1.60) .006(0.177) .003(0.080) .039(1.00) .023(0.60) .017(0.45) .009(0.25) □ Mechanical data -Case：Molded plastic -Epoxy：UL 94V-0 rate flame retardant -Terminals：Solder plated, solderable per MIL-STD-750,method 2026 -Polarity：Color band denotes cathode end .003(0.10) .106(2.70) .090(2.30) □ Maximum ratings and Electrical characteristics TYPE SYMBOL CH520S-30PT UNIT Maximum Recurrent Peak Reverse Voltage VRRM 40 V Maximum RMS Voltage VRMS 28 V Maximum DC Blocking Voltage VDC 40 V Maximum Average Forward Rectified Current IO 0.75 A Peak Forward urge Current, 8.3ms single half sine-wave IFSM 2.5 A Maximum Instantaneous Forward Voltage VF Maximum Average Reverse Current at VR = 30V IR 50 μA Typical Junction Capacitance between Terminal (Note 1) CJ 12.0 pF Operating Temperature Range TJ 150 ºC Storage Temperature Range TSTG -65 - 150 ºC Note: Measured at 1.0 MHz and applied reverse voltage of 10.0 volts http:// www.sirectsemi.com IF = 100mA 0.38 IF = 750mA 0.58 V August 2007 / Rev.5 1 CH651H-40PT 100m 10A Ta = 125℃ REVERSE CURRENT , (A) 1A 12 5℃ 100m 25 ℃ 75 ℃ = 10m Ta 1m -2 5℃ FORWARD CURRENT , (A) 10m 1m 75℃ 100u 25℃ 10u -25℃ Iu 100n 100u 0 0.1 0.2 0.3 0.4 0 0.5 10 30 40 REVERSE VOLTAGE , (V) FORWARD VOLTAGE , (V) Figure 2. Reverse Characteristics Figure 1. Forward Characteristics 1.0 AVERAGE FORWARD CURRENT , (A) 1000 JUNCTION CAPACITANCE , (pF) 20 100 10 f = 1MHz 1 0 10 20 30 40 0.8 0.6 0.4 0.2 0 0 REVERSE VOLTAGE , (V) 25 50 75 100 125 150 AMBIENT TEMPERATURE ,℃ Figure 3. Typical Junction Capacitance Figure 4. Forward Current Derating Curve Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: [email protected] France: [email protected] Taiwan: [email protected] Hong Kong: [email protected] China: [email protected] …Thailand: [email protected] Philippines: [email protected] Belize: [email protected] http:// www.sirectsemi.com 2