ECH8697R Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 24 V, 11.6 mΩ, 10 A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications. VDSS Features Low On-Resistance 2.5 V drive Common-Drain Type ESD Diode-Protected Gate Built-in Gate Protection Resistor Pb-Free, Halogen Free and RoHS compliance RDS(on) Max 11.6 mΩ @ 4.5 V 12.6 mΩ @ 4.0 V 24 V 15 mΩ @ 3.1 V ELECTRICAL CONNECTION N-Channel 8 7 6 5 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) Symbol Value Unit Drain to Source Voltage VDSS 24 Gate to Source Voltage VGSS ID 12.5 V 10 A IDP 60 A PD 1.5 W PT 1.6 W 150 C 55 to +150 C Drain Current (DC) Drain Current (Pulse) PW 10 s, duty cycle 1% Power Dissipation Surface mounted on ceramic substrate 2 (1000 mm 0.8 mm) 1 unit Total Dissipation Surface mounted on ceramic substrate 2 (1000 mm 0.8 mm) Junction Temperature Tj Storage Temperature Tstg V Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Junction to Ambient Surface mounted on ceramic substrate 2 (1000 mm 0.8 mm) 1 unit © Semiconductor Components Industries, LLC, 2016 December 2016 - Rev. 3 1 2 3 4 MARKING UU LOT No. SOT-28FL / ECH8 ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. THERMAL RESISTANCE RATINGS Parameter 10 A 17.5 mΩ @ 2.5 V Typical Applications 1-2 cells Lithium-ion Battery Charging and Discharging Switch Parameter ID Max Symbol Value RJA 83.3 1 Unit C/W Publication Order Number : ECH8697R/D ECH8697R ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS VGS(th) gFS Gate Threshold Voltage Forward Transconductance Static Drain to Source On-State Resistance RDS(on) Value Conditions min ID = 1 mA, VGS = 0 V VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V 24 VDS = 10 V, ID = 1 mA 0.5 typ Unit max V VDS = 10 V, ID = 5 A 1 A 1 A 1.3 V 5.0 S ID = 5 A, VGS = 4.5 V ID = 5 A, VGS = 4.0 V 7.4 9.3 11.6 m 7.7 9.7 12.6 m ID = 5 A, VGS = 3.1 V 8.5 10.7 15 m ID = 2.5 A, VGS = 2.5 V 10 12.5 17.5 m Turn-ON Delay Time td(on) 160 Rise Time tr 230 ns Turn-OFF Delay Time td(off) 19.7 s Fall Time tf 23.6 s Turn-ON Delay Time td(on) 160 ns Rise Time tr 230 ns Turn-OFF Delay Time td(off) 980 s Fall Time tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD See Fig. 1 (Note 3) See Fig. 2 (Note 3) ns 350 s 6 nC 1.1 nC VDS = 10 V, VGS = 4.5 V, ID = 10 A 0.9 IS = 10 A, VGS = 0 V nC 0.8 1.2 V Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : The fall switching time is dependent on the input pulse width. Fig.1 Switching Time Test Circuit 1 4.5V 0V Fig.2 Switching Time Test Circuit 2 VDD=10V VIN 4.5V 0V ID=5A RL=2Ω VIN ID=5A RL=2Ω VIN VOUT D PW=10μs D.C.≤1% VDD=10V VIN G VOUT D PW >10ms D.C.≤1% G ECH8697R P.G 50Ω ECH8697R P.G S Rg=1.2kΩ 50Ω Rg=1.2kΩ www.onsemi.com 2 S ECH8697R ID -- VDS 8.0 6.0 5.0 4.0 3.0 1.0 Ta=25°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 25°C 2.0 2.0 0 0 1.0 0 0.5 RDS(on) -- VGS 40 Ta=25°C 35 5A 30 ID=2.5A 20 15 10 5 0 2 0 4 6 8 0A 15 10 .0A I =5 4.5V, D = V GS 5 --40 --20 40 60 80 Switching Time, S/W Time -- ns 5 °C 25° C --25 °C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 3 2 Switching Time, S/W Time -- μs 3.0 2.5 2.0 1.5 1.0 0.5 2 3 4 5 160 tf 10k 7 5 3 2 1k 7 5 td(on) 3 10k 3.5 1 140 tr 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A VGS -- Qg 0 120 VDD=10V VGS=4.5V PW=10μs td (off) 100 0.1 1.0 VDS=10V ID=10A 4.0 100 S/W Time -- ID 100k 7 5 Ta= 7 Source Current, IS -- A 20 2 4.5 Gate to Source Voltage, VGS -- V 0 0A 5. I = 0V, D . 4 = VGS =2 VGS Diode Forward Voltage, VSD -- V 0 = VGS A 2.5 I = .5V, D 5. I D= Ambient Temperature, Ta -- °C 10 7 5 3 2 0.01 2.5 V, 3.1 0 --60 VGS=0V 0.1 7 5 3 2 2.0 20 10 IS -- VSD 1.0 7 5 3 2 1.5 RDS(on) -- Ta 25 Gate to Source Voltage, VGS -- V 100 7 5 3 2 1.0 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- mΩ Static Drain to Source On-State Resistance, RDS(on) -- mΩ Drain to Source Voltage, VDS -- V 25 --25°C 4.0 7.0 Ta=75° C 6.0 VDS=10V 9.0 Drain Current, ID -- A 2.5V V =1.5 VGS 1.8V Drain Current, ID -- A 8.0 ID -- VGS 10.0 4. 3.1V 0V 4.5V 10.0 6 1k S/W Time -- Input Pulse Width VDD=10V VGS=4.5V ID=5A td(off) tf 100 7 Total Gate Charge, Qg -- nC 10 td(on) 1 tr 0.1 0.01 0.1 1.0 10 Input Pulse Width -- ms www.onsemi.com 3 100 ECH8697R PD -- Ta 100 7 5 3 2 Surface mounted on ceramic substrate (1000mm2×0.8mm) 1.6 1.5 1.4 To t 1.2 al 1.0 1u 0.8 Di nit ss ip at io n 0.6 0.4 0 20 40 60 80 100 120 0.1 7 5 3 2 Thermal Resistance, RθJA -- ºC/W 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 0μ ID=10A DC 10 s m 10 s 1m 0m s s op er at Operation in this ion area is limited by RDS(on). Ta=25°C Single pulse Surface mounted on ceramic substrate (1000mm2×0.8mm) 1unit 0.01 0.01 2 3 140 150 Ambient Temperature, Ta -- °C IDP=60A(PW≤10μs) 1.0 7 5 3 2 0.2 0 SOA 10 7 5 3 2 Drain Current, ID -- A Power Dissipation, PD -- W 1.8 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain to Source Voltage, VDS -- V RθJA -- Pulse Time 5 7100 Duty Cycle=0.5 0.2 0.1 0.05 0.02 0.01 ulse gle P Sin 0.01 7 5 3 2 0.001 0.000001 2 Surface mounted on ceramic substrate (1000mm2×0.8mm) 1unit 3 5 70.00001 2 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 Pulse Time, PT -- s www.onsemi.com 4 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 ECH8697R PACKAGE DIMENSIONS unit : mm SOT-28FL / ECH8 CASE 318BF ISSUE O to 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain Recommended Soldering Footprint 7 : Drain 8 : Drain 2.8 0.6 0.4 0.65 ORDERING INFORMATION Device ECH8697R-TL-W Marking Package Shipping (Qty / Packing) UU SOT-28FL / ECH8 (Pb-Free / Halogen Free) 3,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the ECH8697R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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