Diode Semiconductor Korea GBU8A - - - GBU8M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 8.0A SILICON BRIDGE RECTIFIERS FEATURES GBU Rating to 1000V PRV Surge overload rating to 200 Amperes peak 22.3± 0.3 3.7± 0.35 4 45° 3.8± 0.2 Lead solderable per MIL-STD-202 method 208 - AC P. TY 2.2± 0.2 .9 R1 plastic technique results in inexpensive product 1.9± 0.3 Reliable low cost construction utilizing molded 18.7± 0.2 7.9± 0.2 Ideal for printed circuit board + 2.5± 0.2 2.4± 0.2 18.3± 0.5 Glass passivated junctions 1.2± 0.15 5.0± 0.3 0.5± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. GBU 8A GBU 8B GBU 8D GBU 8G GBU 8J GBU 8K GBU 8M UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage V DC 50 100 200 400 600 800 1000 V Maximum average forw ard output current @TC=100 IF(AV) 8.0 A IFSM 200.0 A VF 1.0 V 5.0 μA 0.5 mA Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load Maximum instantaneous forw ard voltage @ 4.0 A Maximum reverse current at rated DC blocking voltage @TA=25 @TA=125 Operating junction temperature range Storage temperature range IR TJ - 55 ---- + 150 TSTG - 55 ---- + 150 www.diode.kr Diode Semiconductor Korea GBU8A - - - GBU8M FIG.2 -- MAXIMUM FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE 8 6 4 2 0 MOUNTES ON 4:4 INCH CPUFER PC BOARD 0.5"(12.7mm) Lead length 25 0 50 75 100 125 150 175 300 250 200 150 100 50 0 1 CASE TEMPERATURE, INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES 40 20 10 4.0 2.0 TJ=25 Pulse Width =300µS 0.4 0.2 0.1 0.7 0.8 0.9 1.0 1.1 1.2 5 10 20 50 100 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 100 1.0 2 NUMBER OF CYCLES AT 60HZ FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 1.3 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 TJ=125 10 1 TJ=25 .1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER ELEMENT 400 CAPACITANCE, pF INSTANTANEOUS FORWARD CURRENT, AMPERES 350 100 TJ=25 50 10 1 10 100 REVERSE VOLTAGE, VOLTS www.diode.kr