Freescale MMM6025 Quad-band gsm/gprs power amplifier front-end module with pa and antenna switch Datasheet

Freescale Semiconductor
Advance Information
Document Number: MMM6025
Rev. 5.1, 03/2005
MMM6025
Package Information
Case 1603-2
9.85 × 9.0 × 1.4 mm HDI
(Organic Multi-Chip Module)
MMM6025
Quad-Band GSM/GPRS Power
Amplifier Front-End Module with
PA and Antenna Switch
Ordering Information
Device
MMM6025
MMM6025R2
1
Introduction
The MMM6025 is a 50 Ω Tx Power Amplifier
Front-End Module for quad- and tri-band GSM/GPRS
handset applications, functioning over the GSM850,
EGSM, DCS, and PCS transmit and receive frequency
bands. It is compatible with GSM/GPRS Class 12
operating modes. To simplify radio front-end design
requirements, power amplification, power coupling,
power detection, low pass filtering, and antenna
switching functions are integrated into the Power
Amplifier Front-End Module. Transmit/receive path and
enable functions are controlled through 0/2.8 V logic
inputs.
Operating
Temp. Range
Package
–20° to 70°C HDI Module
–20° to 70°C HDI Module
Tape and Reel
Contents
1
2
3
4
5
6
7
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Functional Block Diagram . . . . . . . . . . . . . . . 2
Electrical Characteristics . . . . . . . . . . . . . . . 2
RF Specifications . . . . . . . . . . . . . . . . . . . . . . 4
Signal Descriptions . . . . . . . . . . . . . . . . . . . 11
Package Information . . . . . . . . . . . . . . . . . . 14
Product Documentation . . . . . . . . . . . . . . . . 16
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Freescale Semiconductor, Inc., 2004, 2005. All rights reserved.
Functional Block Diagram
2
Functional Block Diagram
Figure 1 is a functional block diagram of the quad-band (GSM850, EGSM, DCS, and PCS) power
amplifier module.
VDD3_HB
VDDB_HB,
VDD1_HB
VDD2_HB
RX_CEL
RX_GSM
MATCH
TXIN_HB
MATCH
PREDRIVER
MATCH
DRIVER
FINAL
RX_PCS
RX_DCS
MMM6025
GSM/GPRS PA MODULE
850/900/1800/1900
MATCH
Coupler
Harmon ic
Filter
VAPC
EN_TX
VREG_2.8
TXIN_LB
BIAS CONTROL
ANTENNA
SP6T
MATCH
PREDRIVER
Coupler
DRIVER
FINAL
MATCH
Harmonic
Filter
MATCH
VDDB_LB,
VDD1_LB
POWER
DETECTION
MATCH
VDD2_LB
VDD3_LB
VREF
VDET
EN_DET
ANTENNA
CONTROL
EN_DET_PA
EUB_US
EN_ANT_TX
LOWB_HIGH
Figure 1. Functional Block Diagram
3
Electrical Characteristics
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain Supply Voltages
Vdd
7.0
V
RF Input Power
Pin
11
dBm
Operating (Ambient) Temperature Range
TA
–20 to 70
°C
Storage Temperature
Tstg
–40 to 125
°C
Junction Temperature
TJ
125
°C
Note: Maximum Ratings and ESD
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted
to the limits in the Electrical Characteristics or Recommended Operating Conditions tables.
2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤ 150 V and Machine Model (MM) ≤ 50 V.
Additional ESD data available upon request.
MMM6025 Advance Information, Rev. 5.1
2
Freescale Semiconductor
Electrical Characteristics
Table 2. Recommended Operating Conditions
Characteristic
Symbol
Min
Typ
Max
Unit
Vdd
2.8
3.2
4.5
V
VRAMP
0.1
-
2.2
V
Pin
5
-
11
dBm
Symbol
Min
Typ
Max
Unit
Vdd(TX_off)
Vdd(TX_on)
2.8
3.6
3.2
7.0
4.5
PA Output Control Voltage
VAPC
0.1
0.2 to 2.1
2.2
V
PA Output Control Current
IAPC
-3.0
-
3.5
mA
VEN_DET_PA(H)
VEN_DET_PA(L)
2.5
0
-
2.9
0.3
IEN_DET_PA(H)
IEN_DET_PA(L)
-
-
2.0
10
Mode Select Voltage
US (selects GSM850 or PCS)
EU (selects EGSM or DCS)
VEUB_US(H)
VEUB_US(L)
2.5
0
-
2.9
0.3
RX Band Select Current
Source
Sink
IEUB_US(H)
IEUB_US(L)
-
-
0.1
10
2.5
0
-
2.9
0.3
IEN_ANT_TX(H)
IEN_ANT_TX(L)
-
-
0.1
10
mA
µA
Voltage PA 2 (Regulated Supply)
VREG28
2.65
-
2.9
V
Current Draw
IREG28
-
-
18
mA
VLOWB_HIGH(H)
VLOWB_HIGH(L)
2.5
0
-
2.9
0.3
Drain Supply Voltage
Power Control Ramp Voltage
RF Input Power
Table 3. DC Specifications
Characteristic
Voltage PA I (Drain Supplies)
Transmitter Off
Transmitter On
Detector PA Enable
High
Low
Vdc
Voltage1
Vdc
Detector PA Enable Current1
Source
Sink
mA
µA
Vdc
TX Antenna Enable Voltage
High
Low
VEN_ANT_TX(H)
VEN_ANT_TX(L)
TX Antenna Enable Current
Source
Sink
BAND SELECT
High (DCS/PCS Bands Selected)
Low (GSM850/EGSM Bands Selected)
mA
µA
Vdc
V
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
3
RF Specifications
Table 3. DC Specifications (continued)
Characteristic
BAND SELECT Current Level
High
Low
Symbol
Min
Typ
Max
ILOWB_HIGH(H)
ILOWB_HIGH(L)
-
-
10
10
IVdd(off)
-
5.0
7.0
Unit
µA
Total module leakage current (Standby condition)
EN_DET_PA = 0.3 V
EUB_US = EN_ANT_TX = +0.3 V
LOWB_HIGH = 0.3 V
VAPC = 0.1 V
VREG_IN = 0 V or 2.775 V
µA
Temp = 23 to 27°C
Vdd = 3.8 V
1
The MMM6025 pinout is compatible with that of MMM6022, except pin 8.
MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET.
The following table provides additional details on MMM6025 orderable parts.
Table 4. Orderable Parts Details
4
Device
Operating
Temp. Range
(TA)
MMM6025
–20° to 70°C
MMM6025R2
–20° to 70°C
RoHS
Compliant
Pb-Free
MSLLevel
SolderTemp.
HDI Module
Yes
Yes
3
250 °C
HDI Module
Tape and Reel
Yes
Yes
3
250 °C
Package
RF Specifications
This section details specifications for the EGSM, DCS, GSM850, and PCS bands.
Table 5. EGSM Band Specifications
Characteristic
Symbol
Min
Typ
Max
Unit
EGSM BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle,
LOWB_HIGH = Low, EUB_US = Low, TC = 25°C ±5°C, unless otherwise noted.)
Operating Frequency
Transmit
Receive
f
MHz
880
925
-
915
960
Power Out
Po(max)
33
-
-
dBm
Power Out Low Voltage (Vdd = 2.8 V)
Po(min)
32
-
-
dBm
PAE
40
44
-
%
Po(range)
35
-
-
dB
∆Vdet/∆VAPC
-
-
3.0
V/V
Power Added Efficiency (Saturated Pout)
Power Control Range1
Power Control
Slope2
MMM6025 Advance Information, Rev. 5.1
4
Freescale Semiconductor
RF Specifications
Table 5. EGSM Band Specifications (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
PC3dB
1.0
-
-
MHz
tPC
-
-
1.5
µs
ISO1
ISO2
-
-
-41
-22
dBm
VDET(low)
VDET(high)
40
1.0
-
150
2.05
mV
V
2f0 – 15f0
-
-
-33
dBm
nRX
(925 to 935 MHz)
-
-
-73
dBm/
100 kHz
nRX
(935 to 960 MHz)
-
-
-84
dBm/
100 kHz
Po_ot(min)
31.5
-
-
dBm
IL_RX
-
-
1.4
dB
ISO_ANT_RX_CEL
ISO_ANT_RX_GSM
ISO_ANT_RX_DCS
ISO_ANT_RX_PCS
27
27
27
27
-
-
Input VSWR
VSWR
-
-
2:1
Power Out Change due to Coupling Variations
(VSWR = 3:1 @ ANT Port)6
CPLV
-1.5
-
1.5
Load Mismatch Stress (Ruggedness)7
Rugg
Stability - Spurious Output8
Stab
-
-
-36
dBm
Pout_Temp Ambient 1
(Pout = 6 dBm)
Pout_Temp Ambient 2
(Pout = 20 dBm)
Pout_Temp Ambient 3
(Pout = 33 dBm)
-1.5
-
1.5
dB
1.0
-
1.0
dB
-0.5
-
0.5
dB
Power Control Frequency 3.0 dB BW
Power Control Response Time3
Forward Isolation
4
Power Detector Voltage1
Low Power
High Power
Harmonics5
(Pout Max = 33 dBm)
GSM RX Band Noise5
(Vdd = 4.2 V, Saturated Pout)
(Pout = 33 dBm)
Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C)
Insertion Loss from Antenna to RX_GSM5
Tx - Rx Isolation5
ANTENNA to RX_CEL
ANTENNA to RX_GSM
ANTENNA to RX_DCS
ANTENNA to RX_PCS
dB
Closed Loop Power Variation over Temperature9
1
2
3
4
5
6
7
dB
No performance degradation and no module
damage
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range
of 0.1 to 2.2 V and both rise and fall edges.
Measured at antenna port, ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V;
ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm
Output VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less
than or equal to 33dBm.
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
5
RF Specifications
8
Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less
than or equal to 33dBm.
9
Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and
Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF]
Table 6. DCS Band Specifications
Characteristic
Symbol
Min
Typ
Max
1710
1805
-
1785
1880
Unit
DCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle,
LOWB_HIGH = High, EUB_US = Low, TC = 25°C ±5°C, unless otherwise noted.)
Operating Frequency
Transmit
Receive
f
MHz
Power Out
Po(max)
30
-
-
dBm
Power Out Low Voltage (Vdd = 2.8 V)
Po(min)
29
-
-
dBm
PAE
28
33
-
%
Po(range)
35
-
-
dB
∆Vdet/∆VAPC
-
-
3.5
V/V
PC3dB
1.0
-
-
MHz
tPC
-
-
1.5
µs
ISO1
ISO2
-
-
-53
-25
dBm
VDET(low)
VDET(high)
40
1.0
-
150
2.05
mV
V
2f0 – 15f0
-
-
-33
dBm
nRX
-
-
-77
dBm/
100 kHz
Po_ot(min)
28.5
-
-
dBm
IL_RX
-
-
1.7
dB
ISO_ANT_RX_CEL
ISO_ANT_RX_GSM
ISO_ANT_RX_DCS
ISO_ANT_RX_PCS
27
27
27
27
-
-
Input VSWR
VSWR
-
-
2:1
Power Out Change due to Coupling Variations
(VSWR = 3:1 @ ANT Port)7
CPLV
-1.5
-
1.5
Load Mismatch Stress (Ruggedness)8
Rugg
Power Added Efficiency (Saturated Pout)
Power Control Range1
Power Control
Slope2
Power Control Frequency 3.0 dB BW
Power Control Response
Time3
Forward Isolation4
Power Detector Voltage1
Low Power
High Power
Harmonics6
(Pout Max = 30 dBm)
RX Band Noise5,6
(Pout = 30 dBm)
Pout over Temp (Vdd = 2.8 V, TA = –20 to 70°C)
Insertion Loss from Antenna to RX_DCS6
Tx - Rx Isolation6
ANTENNA to RX_CEL
ANTENNA to RX_GSM
ANTENNA to RX_DCS
ANTENNA to RX_PCS
dB
dB
No performance degradation and no
module damage
MMM6025 Advance Information, Rev. 5.1
6
Freescale Semiconductor
RF Specifications
Table 6. DCS Band Specifications (continued)
Characteristic
Stability - Spurious Output9
Closed Loop Power Variation over Temperature10
Symbol
Min
Typ
Max
Unit
Stab
-
-
-36
dBm
Pout_Temp Ambient 1
(Pout = 3 dBm)
Pout_Temp Ambient 2
(Pout = 15 dBm)
Pout_Temp Ambient 3
(Pout = 30 dBm)
-1.5
-
1.5
dB
1.0
-
1.0
dB
-0.5
-
0.5
dB
1
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
3
Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range
of 0.1 to 2.2 V and both rise and fall edges.
4
Measured at antenna port: ISO1: Pin = -10 dBm, EN_ANT_TX = 0 V, VAPC = 0.1 V;
ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
5
DCS RX band = 1805 to 1880 MHz. Vdd = 4.2V, Saturated Pout.
6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P
out = 30 dBm
8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or
equal to 30 dBm
9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less
than or equal to 30dBm.
10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and
Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF]
2
Table 7. GSM850 Band Specifications
Characteristic
Symbol
Min
Typ
Max
Unit
GSM850 BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = Low, EUB_US
= High, TC = 25°C ±5°C, unless otherwise noted.)
Operating Frequency
Transmit
Receive
f
MHz
824
869
-
849
894
Power Out
Po(max)
33
-
-
dBm
Power Out Low Voltage (VCC_PA = 2.8 V)
Po(min)
32
-
-
dBm
Power Added Efficiency (Saturated Pout)
PAE
38
43
-
%
Po(range)
35
-
-
dB
∆Vdet/∆VAPC
-
-
3.0
V/V
PC3dB
1.0
-
-
MHz
tPC
-
-
1.5
µs
ISO1
ISO2
-
-
-41
-22
dBm
Power Control Range1
2
Power Control Slope
Power Control Frequency 3.0 dB BW
Power Control Response Time
Forward Isolation4
3
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
7
RF Specifications
Table 7. GSM850 Band Specifications (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
VDET(low)
VDET(high)
40
1.0
-
150
2.05
mV
V
2f0 – 15f0
-
-
-33
dBm
nRX
-
-
-84
dBm/
100 kHz
Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C)
Po_ot(min)
31.5
-
-
dBm
Insertion Loss from Antenna to RX_GSM8506
IL_RX
-
-
1.4
dB
ISO_ANT_RX_CEL
ISO_ANT_RX_GSM
ISO_ANT_RX_DCS
ISO_ANT_RX_PCS
27
27
27
27
-
-
Input VSWR
VSWR
-
-
2:1
Power Out Change due to Coupling Variations
(VSWR =3:1 @ ANT Port)7
CPLV
-1.5
-
1.5
Load Mismatch Stress (Ruggedness)8
Rugg
Stability - Spurious Output9
Stab
-
-
–36
dBm
Pout_Temp Ambient 1
Pout = 6 dBm
Pout_Temp Ambient 2
Pout = 20 dBm
Pout_Temp Ambient 3
Pout = 33 dBm
-1.5 dB
-
1.5dB
dB
1.0 dB
-
1.0 dB
dB
-0.5 dB
-
0.5 dB
dB
Power Detector Voltage1
Low Power
High Power
Harmonics6
(Pout Max = 33 dBm)
GSM850 RX Band Noise5,6
(Pout = 33 dBm)
Tx - Rx Isolation6
ANTENNA to RX_CEL
ANTENNA to RX_GSM
ANTENNA to RX_DCS
ANTENNA to RX_PCS
dB
Closed Loop Power Variation over Temperature10
dB
No performance degradation and no
module damage
1
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
3 Measurement made from 50% of V
APC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range
of 0.1 to 2.2 V and both rise and fall edges.
4 Measured at antenna port: ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V
in
APC = 0.1 V;
ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1 V. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C)
5 GSM850 RX band = 869 to 894 MHz. Vdd = 4.2 V, Saturated P .
out
6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70°C
7
Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: Pout = 33 dBm
8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or
equal to 33dBm
9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less
than or equal to 33dBm.
10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and
Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF]
2
MMM6025 Advance Information, Rev. 5.1
8
Freescale Semiconductor
RF Specifications
Table 8. PCS Band Specifications
Characteristic
Symbol
Min
Typ
Max
Unit
PCS BAND (Pin = 5.0 to 11 dBm, Vdd = 3.2 Vdc, VAPC = 0.1 to 2.2 V pulsed, 25% duty cycle, LOWB_HIGH = High, EUB_US =
High, TC = 25°C ±5°C, unless otherwise noted.)
Operating Frequency
Transmit
Receive
f
MHz
1850
1930
-
1910
1990
Power Out
Po(max)
30
-
-
dBm
Power Out Low Voltage (Vdd = 2.8 V)
Po(min)
29
-
-
dBm
PAE
28
33
-
%
Po(range)
35
-
-
dB
∆Vdet/∆VAPC
-
-
3.5
V/V
PC3dB
1.0
-
-
MHz
tPC
-
-
1.5
µs
ISO1
ISO2
-
-
-53
-25
dBm
VDET(low)
VDET(high)
40
1.0
-
150
2.05
mV
V
2f0 – 15f0
-
-
-33
dBm
nRX
-
-
-77
dBm/100 kHz
Po_ot(min)
28.5
-
-
dBm
IL_RX
-
-
1.7
dB
ISO_ANT_RX_CEL
ISO_ANT_RX_GSM
ISO_ANT_RX_DCS
ISO_ANT_RX_PCS
27
27
27
27
-
-
Input VSWR
VSWR
-
-
2:1
Power Out Change due to Coupling Variations (VSWR = 3:1 @ ANT
Port)7
CPLV
-1.5
-
1.5
Load Mismatch Stress (Ruggedness)8
Rugg
No performance degradation or
module damage
Power Added Efficiency (Saturated Pout)
Power Control Range1
Power Control
Slope2
Power Control Frequency 3.0 dB BW
Power Control Response
Time3
Forward Isolation4
Power Detector Voltage1
Low Power
High Power
Harmonics6
(Pout Max = 30 dBm)
RX Band Noise5,6
(Pout = 30 dBm)
Pout over Temp (Vdd = 2.8 V, TA = -20 to 70°C)
Insertion Loss from Antenna to RX_PCS6
Tx - Rx Isolation6
ANT to RX_CEL
ANT to RX_GSM
ANT to RX_DCS
ANT to RX_PCS
dB
dB
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
9
RF Specifications
Table 8. PCS Band Specifications (continued)
Characteristic
Stability - Spurious Output9
Closed Loop Power Variation over Temperature10
Symbol
Min
Typ
Max
Unit
Stab
-
-
-36
dBm
Pout_Temp Ambient
1 Pout = 3 dBm
Pout_Temp Ambient
2 Pout = 15 dBm
Pout_Temp Ambient
3 Pout = 30 dBm
-1.5
dB
-
1.5dB
dB
-
1.0
dB
dB
1.0
dB
-0.5
dB
-
dB
0.5
dB
1
Power output must be monotonic with power detector voltage. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C)
Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C
3
Measurement made from 50% of VAPC to 10%/90% of VDET_OUT final value, with pulsed VAPC with a peak voltage in the range
of 0.1 to 2.2 V and both rise and fall edges.
4 Measured at antenna port, ISO1: P = -10 dBm, EN_ANT_TX = 0 V, V
in
APC = 0.1 V;
ISO2: Pin = 11 dBm, EN_ANT_TX = 2.723 V, VAPC = 0.1. (Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C)
5 PCS RX band = 1930 to 1990 MHz. Vdd = 4.2 V, Saturated P .
out
6 Vdd = 2.8V to 4.5V and Temperature = -20 to +70 °C
7 Maintaining constant Vdet-Vref at all mismatch phase angles. Measured at antenna port: P
out = 30 dBm
8 VSWR = 20:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than or
equal to 30 dBm
9 Output VSWR = 10:1 all phase angles, Vdd = 2.8V to 4.5V, Pin = 5dBm to 11dBm, Temperature = -20 to +70°C, Power less than
or equal to 30dBm.
10 Vdiff_var = 20*LOG(Delta(T)/Delta(25°C)), where T is -20 to 65°C, Delta(T)= [Vdiff(T) with RF] - [Vdiff(T) without RF], and
Delta(25°C)= [Vdiff(25°C) with RF] - [Vdiff(25°C) without RF]
2
MMM6025 Advance Information, Rev. 5.1
10
Freescale Semiconductor
Signal Descriptions
Gnd
RX_PCS
Gnd
RX_DCS
VAPC
Gnd
1
VDD3_HB
Gnd
VDD2_HB
Signal Descriptions
VDDB_HB +
VDD1_HB
5
34
33
32
31
30
29
28
27
26
Gnd
2
25
RX_CEL
Gnd
3
24
Gnd
TXIN_HB
4
23
RX_GSM
22
Gnd
MMM6025
(Top View Through Package)
Gnd
5
TXIN_LB
6
21
ANT
Gnd
7
20
Gnd
NC
8
19
EUB_US
Gnd
9
18
EN_ANT_TX
VDD2_LB
VDD3_LB
VREG28
14
15
16
17
LOWB_HIGH
13
EN_DET_PA
12
VDET
11
VREF
10
VDDB_LB
+ VDD1_LB
9.85 mm × 9.0 mm
(± 0.1 mm)
Figure 2. Pin Out
Table 9. Contact Connections
Section
RF
Signal
Description
Pin(s)
TXIN_LB
TX Input (Low Bands), DC Blocked
6
TXIN_HB
TX Input (High Bands), DC Blocked
4
ANT
Antenna
21
RX_GSM
RX Output (GSM Band)
23
RX_DCS
RX Output (DCS Band)
27
RX_CEL
RX Output (CEL Band)
25
RX_PCS
RX Output (PCS Band)
29
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
11
Signal Descriptions
Table 9. Contact Connections (continued)
Section
Supply
Control
Signal
1
Pin(s)
VDDB_LB
DC Supply (Battery) for Bias Control (Low Bands)
VDD1_LB
DC Supply (Battery) for Pre-Driver (Low Bands)
VDD2_LB
DC Supply (Battery) for Driver Stage (Low Bands)
11
VDD3_LB
DC Supply (Battery) for Final Stage (Low Bands)
12
VDDB_HB
DC Supply (Battery) for Bias Control (High Bands)
34
VDD1_HB
DC Supply (Battery) for Pre-Driver (High Bands)
VDD2_HB
DC Supply (Battery) for Driver Stage (High Bands)
33
VDD3_HB
DC Supply (Battery) for Final Stage (High Bands)
32
VREG28
DC Reference Supply (Regulated)
13
VAPC
Analog Power Control
2
LOWB_HIGH
Band Select Low (CEL, GSM)/High (DCS,PCS)
17
EN_ANT_TX
Enable TX Antenna Switch Path
18
EUB_US
Mode Select EU (GSM, DCS)/US (CEL, PCS)
19
EN_DET_PA
Enable Detector and Power Amplifier1
16
Detected Output of Detector
15
Reference Output of Detector
14
Power
VDET
Detection
VREF
Ground
Description
Gnd
10
Ground
3, 5, 7, 20, 22, 24, 26,
28, 31, 1, 9, 30
The MMM6025 pinout is compatible with that of MMM6022, except pin 8.
MMM6025 signal EN_DET_PA (pin 16) is equivalent to a combination of both MMM6022 signals EN_TX and EN_DET.
Table 10. Logic States
EUB_US
LOWB_HIGH EN_AN_TX
Mode
Band(s)
High
Low
High
TX
GSM850
Low
Low
High
TX
EGSM
Low
High
High
TX
DCS
High
High
High
TX
PCS
High
Low
Low
RX
GSM850
Low
Low
Low
RX
EGSM
Low
High
Low
RX
DCS
High
High
Low
RX
PCS
MMM6025 Advance Information, Rev. 5.1
12
Freescale Semiconductor
Signal Descriptions
Figure 3 shows the top view of the MMM6025 demoboard application schematic.
VDD3_HB
C19
VDD2_HB
C8
VDD1_HB
C7
C10
C9
RX_PCS
C18
C6
RX_DCS
34
33
32
31
30
29
28
27
1
26
2
25
3
24
4
23
C17
VAPC
C11
RX_CEL
C16
TXIN_HB
RX_GSM
MMM6025
Top View
5
22
6
21
7
20
8
19
TXIN_LB
N.C.
ANT
EUB_US
9
18
10
11
12
13
14
15
16
17
EN_ANT_TX
C1 = C2 = C6 = C7 = 0.1µF
C3 = C5 = C8 = C10 = 10µF
LOWB_HIGH
VDD1_LB
EN_DET_PA
VDD2_LB
VDD3_LB
VREG28
C1
C3
C2
C5
C4
C12
C13
C14
C4 = C9 = 1µF
C11 = 2.2nF
VDET
C12 = 0.01µF
VREF
C13 = 100pF
C14 = C16 = C17 =
C18 = C19 = 33pF
Figure 3. Demoboard Application Schematic
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
13
Package Information
6
Package Information
Figure 4 shows the MMM6025 9.85 × 9.0 × 1.4 mm HDI package case outline. Figure 5 on page 15 shows
the bottom view.
Figure 4. Package Outline
MMM6025 Advance Information, Rev. 5.1
14
Freescale Semiconductor
Package Information
Figure 5. Package Outline—Bottom View
MMM6025 Advance Information, Rev. 5.1
Freescale Semiconductor
15
7
Product Documentation
This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data.
Definitions of these types are available at: http://www.freescale.com on the documentation page.
Table 11 summarizes revisions to this document since the previous release (Rev. 5).
Table 11. Revision History
Location
Mulitple locations
How to Reach Us:
Home Page:
www.freescale.com
E-mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1-800-521-6274 or +1-480-768-2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064, Japan
0120 191014 or +81 3 5437 9125
[email protected]
Revision
Changed Case Temp to Ambient Temp. Added Tape and Reel and
Lead Free information.
Information in this document is provided solely to enable system and software implementers to use
Freescale Semiconductor products. There are no express or implied copyright licenses granted
hereunder to design or fabricate any integrated circuits or integrated circuits based on the information
in this document.
Freescale Semiconductor reserves the right to make changes without further notice to any products
herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary
in different applications and actual performance may vary over time. All operating parameters,
including “Typicals”, must be validated for each customer application by customer’s technical
experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights
of others. Freescale Semiconductor products are not designed, intended, or authorized for use as
components in systems intended for surgical implant into the body, or other applications intended to
support or sustain life, or for any other application in which the failure of the Freescale Semiconductor
product could create a situation where personal injury or death may occur. Should Buyer purchase
or use Freescale Semiconductor products for any such unintended or unauthorized application,
Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries,
affiliates, and distributors harmless against all claims, costs, damages, and expenses, and
reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other
product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2004, 2005. All rights reserved.
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1-800-521-6274 or 303-675-2140
Fax: 303-675-2150
[email protected]
Document Number: MMM6025
Rev. 5.1
03/2005
RoHS-compliant and/or Pb- free versions of Freescale products have the functionality
and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free
counterparts. For further information, see http://www.freescale.com or contact your
Freescale sales representative.
For information on Freescale.s Environmental Products program, go to
http://www.freescale.com/epp.
Similar pages