BTA412Y series B and C 12 A Three-quadrant triacs, insulated, high commutation, high temperature Rev. 01 — 3 October 2007 Product data sheet 1. Product profile 1.1 General description Passivated, new generation, high commutation triacs in an internally insulated TO-220 plastic package 1.2 Features n Very high commutation performance n Isolated mounting base n High operating junction temperature n High immunity to dV/dt n 2500 V RMS isolation voltage 1.3 Applications n Heating and cooking appliances n High power motor control e.g. vacuum cleaners n Solid state relays n Non-linear rectifier-fed motor loads n Electronic thermostats for heating and cooling loads 1.4 Quick reference data n VDRM ≤ 600 V (BTA412Y-600B/C) n VDRM ≤ 800 V (BTA412Y-800B/C) n IT(RMS) ≤ 12 A n IGT ≤ 50 mA (BTA412Y series B) n IGT ≤ 35 mA (BTA412Y series C) n ITSM ≤ 140 A (t = 20 ms) BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 2. Pinning information Table 1. Pinning Pin Description Simplified outline 1 main terminal 1 (T1) 2 main terminal 2 (T2) 3 gate (G) mb mounting base; isolated Symbol mb T2 T1 G sym051 1 2 3 SOT78D (TO-220) 3. Ordering information Table 2. Ordering information Type number Package BTA412Y-600B Name Description TO-220 plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT78D 3-lead TO-220 BTA412Y-600C Version BTA412Y-800B BTA412Y-800C 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions BTA412Y-600B; BTA412Y-600C [1] Min Max Unit - 600 V VDRM repetitive peak off-state voltage BTA412Y-800B; BTA412Y-800C - 800 V IT(RMS) RMS on-state current full sine wave; Tmb ≤ 116 °C; see Figure 4 and 5 - 12 A ITSM non-repetitive peak on-state current full sine wave; Tj = 25 °C prior to surge; see Figure 2 and 3 t = 20 ms - 140 A t = 16.7 ms - 153 A t = 10 ms - 98 A2s ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs I2t I2t dIT/dt rate of rise of on-state current IGM peak gate current - 2 A PGM peak gate power - 5 W for fusing BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 2 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature Table 3. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 150 °C [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. 003aab810 16 Ptot (W) 12 8 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° 90° α 60° 30° 4 0 0 3 6 9 12 IT(RMS) (A) α = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 003aab811 160 ITSM (A) 120 80 ITSM IT 40 t 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 3 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 003aab812 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 10-4 10-3 10-2 tp (s) 10-1 tp ≤ 20 ms (1) dIT/dt limit Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values 003aab813 40 IT(RMS) (A) 003aab814 15 IT(RMS) (A) 30 10 20 5 10 0 10-2 10-1 1 10 surge duration (s) 0 -50 0 50 100 150 Tmb (°C) f = 50 Hz Tmb = 116 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 4 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Rth(j-mb) Rth(j-a) Conditions Min Typ Max Unit thermal resistance from junction to full cycle; see Figure 6 mounting base - - 2.1 K/W thermal resistance from junction to in free air ambient - 60 - K/W 003aab815 10 Zth(j-mb) (K/W) 1 10−1 P 10−2 tp 10−3 10−5 10−4 10−3 10−2 10−1 1 t 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse duration 6. Isolation characteristics Table 5. Isolation limiting values and characteristics Th = 25 °C unless otherwise specified. Symbol Parameter Visol(RMS) Cisol Conditions Min Typ Max Unit RMS isolation voltage from all three terminals to external heatsink; f = 50 Hz to 60 Hz; sinusoidal waveform; RH ≤ 65 %; clean and dust free - - 2500 V isolation capacitance - 10 - pF from pin 2 to external heatsink; f = 1 MHz BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 5 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 7. Static characteristics Table 6. Static characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter IGT IL gate trigger current Conditions BTA412Y-600B BTA412Y-800B BTA412Y-600C BTA412Y-800C Unit Min Typ Max Min Typ Max T2+ G+ 2 - 50 2 - 35 mA T2+ G− 2 - 50 2 - 35 mA T2− G− 2 - 50 2 - 35 mA T2+ G+ - - 60 - - 50 mA T2+ G− - - 90 - - 60 mA VD = 12 V; IT = 0.1 A; see Figure 8 latching current VD = 12 V; IGT = 0.1 A; see Figure 10 - - 60 - - 50 mA IH holding current VD = 12 V; IGT = 0.1 A; see Figure 11 T2− G− - - 60 - - 35 mA VT on-state voltage IT = 18 A; see Figure 9 - 1.3 1.5 - 1.3 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; see Figure 7 - 0.8 1.5 - 0.8 1.5 V VD = 400 V; IT = 0.1 A; Tj = 150 °C 0.25 0.4 - 0.25 0.4 - V off-state current VD = VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA VD = VDRM(max); Tj = 150 °C - 0.4 2 - 0.4 2 mA ID BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 6 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 8. Dynamic characteristics Table 7. Dynamic characteristics Symbol Parameter dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions BTA412Y-600B BTA412Y-800B Unit Min Typ Max Min Typ Max VDM = 0.67 × VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 500 - - V/µs VDM = 0.67 × VDRM(max); Tj = 150 °C; exponential waveform; gate open circuit 600 - - 300 - - V/µs VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A; without snubber; gate open circuit 20 - - 15 - - A/ms VDM = 400 V; Tj = 150 °C; IT(RMS) = 12 A; without snubber; gate open circuit 8 - - 6 - - A/ms - 2 - - 2 - µs gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A; turn-on time dIG/dt = 5 A/µs tgt BTA412Y-600C BTA412Y-800C 001aag168 1.6 001aag165 3 VGT IGT VGT(25°C) IGT(25°C) 1.2 2 (1) (2) (3) 1 0.8 0.4 −50 0 50 100 Tj (°C) 150 0 −50 0 50 100 Tj (°C) 150 (1) T2− G− (2) T2+ G− (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 7 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 003aab666 50 001aag166 3 IT (A) IL IL(25°C) 40 2 30 (1) (2) (3) 20 1 10 0 0 0.5 1 1.5 VT (V) 0 −50 2 0 50 100 150 Tj (°C) Vo = 1.024 V Rs = 0.021 Ω (1) Tj = 150 °C; typical values (2) Tj = 150 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature 001aag167 3 IH IH(25°C) 2 1 0 −50 0 50 100 Tj (°C) 150 Fig 11. Normalized holding current as a function of junction temperature BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 8 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 9. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 SOT78D A E A1 p mounting base q D1 D L1 Q b2 L b1 1 2 3 w c M b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 ref E e L L1 ref p Q q w mm 4.7 4.3 1.40 1.25 0.9 0.6 1.4 1.1 1.72 1.32 0.6 0.4 16.0 15.2 6.5 10.3 9.7 2.54 14.0 12.8 3.0 3.7 3.5 2.6 2.2 3.0 2.7 0.2 OUTLINE VERSION SOT78D REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 07-04-04 07-07-10 TO-220 Fig 12. Package outline SOT78D (3-lead TO-220) BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 9 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 10. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA412Y_SER_B_C_1 20071003 Product data sheet - - BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 10 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BTA412Y_SER_B_C_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 01 — 3 October 2007 11 of 12 BTA412Y series B and C NXP Semiconductors 12 A 3-quadrant triacs, insulated, high commutation, high temperature 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Isolation characteristics . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 October 2007 Document identifier: BTA412Y_SER_B_C_1