HP HCPL-181 Phototransistor optocoupler smd mini-flat type Datasheet

Agilent HCPL-181
Phototransistor Optocoupler
SMD Mini-Flat Type
Data Sheet
Description
The HCPL-181 contains a light
emitting diode optically coupled to
a phototransistor. It is packaged in
a 4-pin mini-flat SMD package with
a 2.0 mm profile. The small
dimension of this product allows
significant space saving. The
package volume is 30% smaller
than that of conventional DIP type.
Input-output isolation voltage is
3750 Vrms. Response time, tr, is
typically 4 µs and minimum CTR is
50% at input current of 5 mA.
Ordering Information
Specify part number followed by
Option Number (if desired).
HCPL-181-XXXE
Lead Free
Option Number
000 = No Options
060 = IEC/EN/DIN EN 60747-5-2
Option
00A = Rank Mark A
00B = Rank Mark B
00C = Rank Mark C
00D = Rank Mark D
Functional Diagram
PIN NO. AND INTERNAL
CONNECTION DIAGRAM
4
Schematic
3
ANODE
1
IF
IC 4
+
COLLECTOR
Features
• Current Transfer Ratio
(CTR: min. 50% at IF = 5 mA,
VCE = 5 V)
• High input-output isolation voltage
(Viso = 3750 Vrms)
• High collector-emitter voltage (VCEO
= 80 V)
• Response time (tr: typ., 4 µs at
VCE = 2 V, IC = 2 mA, RL = 100 Ω)
• Mini-flat package (2.0 mm profile) in
tape and reel package
• UL approved
• CSA approved
• IEC/EN/DIN EN 60747-5-2 approved
• Options available:
– IEC/EN/DIN EN 60747-5-2
approvals (060)
Applications
• I/O interfaces for computers
• System appliances, measuring instruments
• Signal transmission between circuits of different potentials and
impedances
• Feedback circuit in power supply
VF
CATHODE
1
1. ANODE
2. CATHODE
–
2
3
EMITTER
2
3. EMITTER
4. COLLECTOR
CAUTION: It is advised that normal static precautions be taken in handling and assembly of this component to
prevent damage and/or degradation which may be induced by ESD.
Package Outline Drawings
HCPL-181-000E
2.54
± 0.25
3.60 ± 0.3
181
Y WW
LEAD
FREE
5.30 ± 0.3
DATE CODE *1
0.2 ± 0.05
2.00 ± 0.2
4.40 ± 0.2
0.10 ± 0.1
0.40 ± 0.1
7.00
+ 0.2
– 0.7
RANK *2
DIMENSIONS IN MILLIMETERS.
HCPL-181-060E
2.54
± 0.25
3.60 ± 0.3
181 V
Y WW
LEAD
FREE
5.30 ± 0.3
DATE CODE *1
0.2 ± 0.05
2.00 ± 0.2
4.40 ± 0.2
+ 0.2
7.00 – 0.7
0.10 ± 0.1
0.40 ± 0.1
RANK *2
DIMENSIONS IN MILLIMETERS.
2) When using another soldering
method such as infrared ray
lamp, the temperature may rise
partially in the mold of the
device. Keep the temperature on
the package of the device within
the condition of (1) above.
2
30 seconds
250°C
Temperature (°C)
Solder Reflow Temperature Profile
1) One-time soldering reflow is
recommended within the
condition of temperature and
time profile shown at right.
260°C (Peak Temperature)
217°C
200°C
150°C
60 sec
25°C
60 ~ 150 sec
90 sec
Time (sec)
60 sec
Absolute Maximum Ratings (TA = 25˚C)
Storage Temperature, TS
Operating Temperature, TA
Lead Solder Temperature, max.
(1.6 mm below seating plane)
Average Forward Current, IF
Reverse Input Voltage, VR
Input Power Dissipation, PI
Collector Current, IC
Collector-Emitter Voltage, VCEO
Emitter-Collector Voltage, VECO
Collector Power Dissipation
Total Power Dissipation
Isolation Voltage, Viso
(AC for 1 minute, R.H. = 40 ~ 60%)
–55˚C to +155˚C
–55˚C to +100˚C
260˚C for 10 s
Rank Mark
A
B
C
D
50 mA
6V
70 mW
50 mA
80 V
6V
150 mW
170 mW
3750 Vrms
CTR (%)
80 ~ 160
130 ~ 260
200 ~ 400
300 ~ 600
Conditions
IF = 5 mA,
VCE = 5 V, TA = 25˚C
Electrical Specifications (TA = 25˚C)
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector Dark Current
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
*Current Transfer Ratio
Collector-Emitter Saturation Voltage
Response Time (Rise)
Response Time (Fall)
Isolation Resistance
Symbol
VF
IR
Ct
ICEO
BVCEO
BVECO
IC
CTR
VCE(sat)
tr
tf
Riso
Min.
–
–
–
–
80
6
2.5
50
–
–
–
5 x 1010
Typ.
1.2
–
30
–
–
–
–
–
–
4
3
1 x 1011
Max.
1.4
10
250
100
–
–
30
600
0.2
18
18
–
Units
V
µA
pF
nA
V
V
mA
%
V
µs
µs
Ω
Floating Capacitance
Cf
–
0.6
1.0
pF
50
40
30
20
10
0
25
50
75
100
125
TA – AMBIENT TEMPERATURE – °C
Figure 1. Forward current vs. temperature.
3
6
200
VCE(SAT.) – COLLECTOR-EMITTER
SATURATION VOLTAGE – V
IF – FORWARD CURRENT – mA
60
0
-55
IF = 20 mA, IC = 1 mA
VCC = 2 V, IC = 2 mA
RL = 100 Ω
DC 500 V
40 ~ 60% R.H.
V = 0, f = 1 MHz
IC
x 100%
IF
PC – COLLECTOR POWER DISSIPATION – mW
* CTR =
Test Conditions
IF = 20 mA
VR = 4 V
V = 0, f = 1 KHz
VCE = 20 V
IC = 0.1 mA, IF = 0
IE = 10 µA, IF = 0
IF = 5 mA, VCE = 5 V
150
100
50
0
-55
TA = 25°C
5
25
50
75
100
125
TA – AMBIENT TEMPERATURE – °C
Figure 2. Collector power dissipation vs.
temperature.
IC = 1 mA
4
IC = 3 mA
3
IC = 5 mA
IC = 7 mA
2
1
0
0
IC = 0.5 mA
0
5
10
15
IF – FORWARD CURRENT – mA
Figure 3. Collector-emitter saturation voltage
vs. forward current.
TA = 0°C
TA = 25°C
100
TA = -25°C
50
20
10
5
2
1
0
0.5
1.0
1.5
2.0
2.5
3.0
VCE = 5 V
TA = 25°C
180
160
140
120
100
80
60
40
20
0
0
VCE(SAT.) – COLLECTOR-EMITTER
SATURATION VOLTAGE – V
RELATIVE CURRENT TRANSFER RATIO – %
100
50
0
20
40
60
80
0.04
0.02
60
80
Figure 8. Collector-emitter saturation
voltage vs. temperature.
VCE = 2 V
IC = 2 mA
TA = 25°C
VOLTAGE GAIN AV – dB
VCE = 2 V
IC = 2 mA
TA = 25°C
50
tr
20
10
tf
5
td
2
1
ts
100
TA – AMBIENT TEMPERATURE – °C
Figure 7. Relative current transfer ratio vs.
temperature.
RESPONSE TIME – µs
40
0.5
0
10
RL = 10 kΩ
RL = 1 kΩ
RL = 100 Ω
20
0.05 0.1 0.2
0.5
1
2
5
10
RL – LOAD RESISTANCE – kΩ
Figure 10. Response time vs. load resistance.
0.5 1
2
5 10 20
50 100 200 500
f – FREQUENCY – kHz
Figure 11. Frequency response.
IF = 15 mA
20
IF = 10 mA
10
IF = 5 mA
1
0
2
3
4
5
7
6
8
9
10000
0.06
0
20
PC (MAX.)
IF = 20 mA
30
Figure 6. Collector current vs. collectoremitter voltage.
0.08
100
TA = 25°C
VCE – COLLECTOR-EMITTER VOLTAGE – V
IF = 20 mA
IC = 1 mA
TA – AMBIENT TEMPERATURE – °C
4
50
0.10
IF = 5 mA
VCE = 2 V
0.2
0.1
20
Figure 5. Current transfer ratio vs. forward
current.
150
200
100
10
IF – FORWARD CURRENT – mA
Figure 4. Forward current vs. forward voltage.
500
5
2
VF – FORWARD VOLTAGE – V
IF = 30 mA
IF = 25 mA
40
0
ICEO – COLLECTOR DARK CURRENT – nA
TA = 50°C
200
50
200
IC – COLLECTOR CURRENT – mA
TA = 75°C
CTR – CURRENT TRANSFER RATIO – %
IF – FORWARD CURRENT – mA
500
VCE = 20 V
1000
100
10
1
20
40
60
80
100
TA – AMBIENT TEMPERATURE – °C
Figure 9. Collector dark current vs.
temperature.
Test Circuit for Response Time
Test Circuit for Frequency Response
VCC
VCC
RL
RD
RD
INPUT
OUTPUT
OUTPUT
~
INPUT
10%
OUTPUT
90%
td
ts
tr
5
tf
RL
www.agilent.com/semiconductors
For product information and a complete list of
distributors, please go to our web site.
For technical assistance call:
Americas/Canada: +1 (800) 235-0312 or
(916) 788-6763
Europe: +49 (0) 6441 92460
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
Obsoletes 5989-0306EN
October 27, 2004
5989-1738EN
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