Panasonic MA3S795E Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA3S795E
Silicon epitaxial planar type
Unit : mm
0.28 ± 0.05
1.60 − 0.03
0.80
0.80
0.51
0.51
■ Features
3
0.60 − 0.03
+ 0.05
0.12 − 0.02
+ 0.05
0.28 ± 0.05
2
■ Absolute Maximum Ratings Ta = 25°C
Symbol
1
+ 0.05
• Extra-small (SS-mini type) package, allowing high-density mounting
• Optimum for low voltage rectification because of its low VF (VF =
0.3 V or less at IF = 1 mA)
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
Parameter
1.60 ± 0.1
0.80 ± 0.05
0.80
0.28 ± 0.05
For switching circuits
Rating
0.44
Unit
0.44
+ 0.05
1 : Anode 1
2 : Anode 2
3 : Carhode 1
Cathode 2
SS-Mini Type Package (3-pin)
0.88 − 0.03
Reverse voltage (DC)
VR
30
V
For switching circuits
VRM
30
V
IFM
150
mA
Peak forward
current
Single
Forward current
(DC)
Single
Double*
110
30
IF
Double*
Marking Symbol: M3D
mA
Internal Connection
20
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1
3
Note) * : Value per chip
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
30
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.3
V
VF2
IF = 30 mA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1
Reverse recovery time*
trr
Detection efficiency
η
V
1.5
pF
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1
ns
Vin = 3 V(peak), f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
1
MA3S795E
Schottky Barrier Diodes (SBD)
IF  V F
IR  VR
VF  Ta
103
1.0
104
0.8
103
Ta = 125°C
− 20°C
10
1
10–1
IF = 30 mA
0.6
10 mA
0.4
Reverse current IR (µA)
Forward current IF (mA)
Ta = 125°C
Forward voltage VF (V)
75°C 25°C
102
75°C
102
25°C
10
1
0.2
1 mA
10−2
0
0.4
0.8
1.2
1.6
2.0
0
−40
2.4
Forward voltage VF (V)
10−1
0
40
80
120
Ct  VR
IR  T a
103
Reverse current IR (µA)
Terminal capacitance Ct (pF)
VR = 25 V
2.5
2.0
1.5
1.0
3V
1V
102
10
1
0.5
0
5
10
15
20
25
Reverse voltage VR (V)
30
10−1
−40
0
40
80
120
160
Ambient temperature Ta (°C)
0
5
10
15
20
25
Reverse voltage VR (V)
104
f = 1 MHz
Ta = 25°C
2
200
Ambient temperature Ta (°C)
3.0
0
160
200
30
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